NDB408AE

May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TC = 25°C unless otherwise noted NDP408A NDP408AE NDB408A NDB408AE 80 80 ±20 ±40 12 36 50 0.33 NDP408B NDP408BE NDB408B NDB408BE Units V V V V 11 33 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP408.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 12 A Type NDP408AE NDP408BE NDB408AE NDB408BE Min Typ Max 40 12 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP408A NDP408AE NDB408A TJ = 125°C NDB408AE NDP408B NDP408BE NDB408B TJ = 125°C NDB408BE NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 6 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 11 2 1.4 2.9 2.3 0.11 0.19 80 250 1 100 -100 4 3.6 0.16 0.32 0.2 0.5 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 5.5 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 10 A 3 5.3 380 115 35 500 125 50 S pF pF pF Ciss Coss Crss NDP408.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 40 V, ID = 12 A, VGS = 10 V, RGEN = 24 Ω Type ALL ALL ALL ALL Min Typ 7.5 48 22 32 12 2.5 6 Max 20 80 40 60 17 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 64 V, ID = 12 A, VGS = 10V ALL ALL ALL NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 12 A 11 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE 36 A 33 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 6 A VGS = 0 V, IS = 12 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.87 0.74 68 4.7 1.3 1.2 100 7 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 3 62.5 °C/W °C/W Notes: 1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%. NDP408.SAM Typical Electrical Characteristics 30 2 V GS = 2 0V I D , DRAIN-SOURCE CURRENT (A) 25 12 8 .0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 V GS = 6V 1.8 1.6 1.4 1.2 1 0.8 0.6 7.0 8 .0 10 12 20 20 7 .0 15 10 6 .0 5 5 .0 0 0 2 4 6 8 0 5 VDS , DRAIN-SOURCE VOLTAGE (V) 10 15 20 I D , DRAIN CURRENT (A) 25 30 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 2.5 V DRAIN-SOURCE ON-RESISTANCE 2 V GS = 10V R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 6A TJ = 125°C 2 GS = 1 0V R DS(ON) , NORMALIZED 1.5 1.5 1 2 5°C 1 0.5 - 55°C 0 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) J 150 175 0.5 0 5 10 15 20 I D , DRAIN CURRENT (A) 25 30 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 10 GATE-SOURCE THRESHOLD VOLTAGE (V) 1.2 V DS = 10V 8 I D , DRAIN CURRENT (A) T = -55°C J 25 125 Vth , NORMALIZED V DS = V 1.1 GS I D = 250µA 1 6 0.9 4 0.8 2 0.7 0 2 3 V GS 4 5 6 7 0.6 -50 -25 0 , GATE TO SOURCE VOLTAGE (V) 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP408.SAM Typical Electrical Characteristics (continued) 1.15 UDRAIN-SOURCE BREAKDOWN VOLTAGE (V) 30 I D = 250µA 1.1 VGS = 0 V TJ = 125°C 25°C - 55°C I S , REVERSE DRAIN CURRENT (A) -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 10 5 2 1 0.5 BV DSS , NORMALIZED 1.05 1 0.1 0.95 0.9 -50 0.01 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 V GS , GATE-SOURCE VOLTAGE (V) 1000 500 C i ss I D = 12A 15 V DS = 12V 64 24 CAPACITANCE (pF) 200 100 50 C o ss 10 C r ss f = 1 MHz V GS = 0 V 5 10 0.1 0.2 V 0.5 DS 1 2 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 50 0 0 5 10 15 Q g , GATE CHARGE (nC) 20 25 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout 10% 10% 90% VGS R GEN Inverted G Input, Vin 10% 50% 50% S Pulse Width Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP408.SAM Typical Electrical Characteristics (continued) 8 g FS TRANSCONDUCTANCE (SIEMENS) , T J = -55°C 6 VGS = 10V 1 25°C L tp + VDD - 2 5°C 4 t p is adjusted to reach the desired peak inductive current, I L . tp IL 10 BV DSS 2 VD S = 1 0V 0 0 2 I D VDD 4 6 , DRAIN CURRENT (A) 8 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Unclamped Inductive Load Circuit and Waveforms. 50 20 ID , DRAIN CURRENT (A) 10 5 RD O S( N) Lim it 10 10 µs 0µ s 1m 10 ms s 2 1 0.5 V GS = 20V DC SINGLE PULSE T C = 25°C 1 2 3 V DS 5 10 20 , DRAIN-SOURCE VOLTAGE (V) 80 150 Figure 15. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0 .1 R θJC (t) = r(t) * RθJC R = 3.0 °C/W θJC 0.1 0 .05 P(pk) 0.05 0.03 0.02 0 .02 0 .01 S ingle Pulse t1 t2 TJ - T C = P * R θJC (t) D uty Cycle, D = t1 /t2 0.05 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000 0.01 0.01 0.02 Figure 16. Transient Thermal Response Curve. NDP408.SAM