NDB410BE

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL TC = 25°C unless otherwise noted NDP410A NDP410AE NDB410A NDB410AE 100 100 ±20 ±40 9 36 50 0.33 NDP410B NDP410BE NDB410B NDB410BE Units V V V V 8 32 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP410.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 9 A Type NDP410AE NDP410BE NDB410AE NDB410BE Min Typ Max 50 9 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.5 A TJ = 125°C VGS = 10 V, ID = 4 A TJ = 125°C ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 4.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 9 2 1.4 2.9 2.3 0.2 0.38 100 250 1 100 -100 4 3.6 0.25 0.5 0.3 0.6 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) 8 A 3 4.8 385 80 20 500 100 30 S pF pF pF Ciss Coss Crss NDP410.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 50 V, ID = 9 A, VGS = 10 V, RGEN = 24 Ω Type ALL ALL ALL ALL Min Typ 7.5 29 26 24 11.6 2.3 5 Max 20 50 45 45 17 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 80 V, ID = 9 A, VGS = 10V ALL ALL ALL NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 9 A 8 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE 36 A 32 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 4.5 A VGS = 0 V, IS = 9 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.87 0.75 85 6 1.3 1.2 120 9 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 3 62.5 °C/W °C/W Notes: 1. NDP410A/410B and NDB410A/410B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%. NDP410.SAM Typical Electrical Characteristics 16 2 V GS = 20V 1 21 0 I D , DRAIN-SOURCE CURRENT (A) 12 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8.0 7.0 V 1.8 GS = 5V 6.0 7.0 1.6 6 .0 8 1.4 8.0 10 12 20 1.2 4 5 .0 1 0 0 2 4 6 VDS , DRAIN-SOURCE VOLTAGE (V) 8 0.8 0 4 8 ID , DRAIN CURRENT (A) 12 16 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.8 2.5 I D = 4.5A DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 2.4 V GS = 1 0V T = 125°C J V GS = 10V 2 R DS(ON), NORMALIZED 2 R DS(on), NORMALIZED 1.5 1.6 2 5°C 1 1.2 - 55°C 0.5 0.8 0.4 - 50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 0 0 4 8 I D , DRAIN CURRENT (A) 12 16 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 10 V th , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE (V) 1.2 V DS = 10V 8 I D, DRAIN CURRENT (A) T J = -55°C 25 125 V DS = V 1.1 GS I D = 250µA 1 6 0.9 4 0.8 2 0.7 0 2 3 V GS 4 5 6 7 8 0.6 -50 -25 0 , GATE TO SOURCE VOLTAGE (V) 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) J 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP410.SAM Typical Electrical Characteristics (continued) 1.06 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) I D = 250µA 1.04 15 10 I S , REVERSE DRAIN CURRENT (A) V GS = 0 V TJ = 125°C 25°C BV DSS , NORMALIZED 1.02 1 - 55°C 1 0.1 0.98 0.96 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 1000 500 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) I D = 9A V DS = 20V C iss 50 80 15 200 100 50 C oss 10 20 10 0.1 f = 1 MHz VGS = 0V 0.2 C rss 5 0 0.5 1 2 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 0 5 10 Q g , GATE CHARGE (nC) 15 20 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP410.SAM Typical Electrical Characteristics (continued) 8 , TRANSCONDUCTANCE (SIEMENS) V 6 DS = 1 0V T J = -55°C 2 5°C 1 25°C VGS = 10V L tp + VDD - 4 t p is adjusted to reach the desired peak inductive current, I L . tp IL BV DSS 2 FS VDD g 0 0 2 I D 4 6 , DRAIN CURRENT (A) 8 10 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Unclamped Inductive Load Circuit and Waveforms. 50 10 ) Lim it µs I D , DRAIN CURRENT (A) 10 5 RD S( ON 10 1m 10 ms 0µ s s 2 1 0.5 1 V GS = 20V SINGLE PULSE T C = 25°C DC 2 3 5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V) 100 150 Figure 15. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0 .1 R θJC (t) = r(t) * RθJC R = 3.0 °C/W θJC 0.1 0 .05 P(pk) 0.05 0.03 0.02 0 .02 0 .01 S ingle Pulse t1 t2 TJ - T C = P * R θJC (t) D uty Cycle, D = t1 /t2 0.05 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000 0.01 0.01 0.02 Figure 16. Transient Thermal Response Curve. NDP410.SAM