NDB603

January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. ______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP603AL 30 ± 20 25 (Note 1) NDB603AL Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed 100 50 0.4 -65 to 175 275 W W/°C °C °C PD Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDP603AL.SAM Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 2) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 25 A 100 25 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA TJ = 125 C VDS = VGS, ID = 10 mA TJ = 125 C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 25 A TJ = 125oC VGS = 4.5 V, ID = 10 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD On-State Drain Current VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V Forward Transconductance VDS = 10 V, ID = 25 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1100 540 175 pF pF pF 60 15 18 S o o 30 10 100 -100 V µA nA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage 1.1 0.7 1.4 1 1.5 1.1 1.85 1.5 0.019 0.028 0.031 3 2.2 3 2.2 0.022 0.045 0.04 A V Ω SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10 V, ID = 25 A, VGS = 10 V VDD = 15 V, ID = 25 A, VGS = 10 V, RGEN = 24 Ω 15 70 90 80 28 5 7 30 110 150 130 40 7 10 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 2) 25 1.3 A V Note: 1. Maximum DC current limited by the package. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDP603AL.SAM Typical Electrical Characteristics 80 3 VGS = 10V ID , DRAIN-SOURCE CURRENT (A) 8 .0 DRAIN-SOURCE ON-RESISTANCE 7.0 6 .0 RDS(on) , NORMALIZED 2.5 VGS = 4V 4 .5 5 .0 60 5 .0 40 2 6 .0 1.5 4 .5 20 7 .0 8 .0 10 4 .0 1 3 .0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 0.5 0 20 40 I D , DRAIN CURRENT (A) 60 80 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 2.5 DRAIN-SOURCE ON-RESISTANCE 1.4 VGS =10V R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 25A V G S = 1 0V 2 RDS(ON), NORMALIZED 1.2 T = 125°C J 1.5 1 2 5°C 1 0.8 - 55°C 0.6 - 50 0.5 -25 0 25 50 75 100 125 150 175 0 20 40 I D , DRAIN CURRENT (A) 60 80 TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 40 0.05 V DS = 1 0 V I D , DRAIN CURRENT (A) 30 TJ = -55°C 25 125 I D , DRAIN CURRENT (A) 0.04 V DS = 1 0 V TJ = 125°C 0.03 25°C -55°C 20 0.02 10 0.01 0 1 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) 6 0 0.5 1 1.5 2 VGS , GATE TO SOURCE VOLTAGE (V) 2.5 Figure 5. Drain Current Variation with Gate Voltage and Temperature. Figure 6. Sub-threshold Drain Current Variation with Gate Voltage and Temperature. NDP603AL.SAM Typical Electrical Characteristics (continued) Vth, GATE-SOURCE THRESHOLD VOLTAGE (V) 2.2 1.12 DRAIN-SOURCE BREAKDOWN VOLTAGE VDS = VGS 2 1.8 1.6 1.4 1.2 1 0.8 -50 ID = 250µA 1.08 I D = 10mA BV DSS , NORMALIZED 1.04 1mA 1 250uA 0.96 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 0.92 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 Figure 7. Gate Threshold Variation with Temperature Figure 8. Breakdown Voltage Variation with Temperature. 2500 2000 , GATE-SOURCE VOLTAGE (V) 10 I D = 25A C i ss 8 VDS = 5V 10 20 1000 CAPACITANCE (pF) C o ss 500 6 4 300 200 V GS = 0 V 100 0.1 0.2 V 0.5 DS V 1 2 5 10 20 30 GS f = 1 MHz C r ss 2 0 0 5 10 15 20 25 30 , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 11. Switching Test Circuit Figure 12. Switching Waveforms NDP603AL.SAM Typical Electrical Characteristics (continued) 25 T = -55°C J , TRANSCONDUCTANCE (SIEMENS) 20 2 5°C 15 IS , REVERSE DRAIN CURRENT (A) 40 20 10 5 2 1 0.5 0.2 0.1 V GS = 0 V TJ = 125°C 25°C - 55°C 1 25°C 10 5 g FS V D S = 1 0V 0 0 10 I D 20 , DRAIN CURRENT (A) 30 40 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 13. Transconductance Variation with Drain Current and Temperature Figure 14. Body Diode Forward Voltage Variation with Current and Temperature 150 100 50 I , DRAIN CURRENT (A) 1m s 20 R 10 5 ( DS ON )L im it 10 1s DC 10 0m m s s V GS = 20V 2 1 0.5 0.1 SINGLE PULSE TC = 25°C D 0.5 1 2 5 10 30 50 V DS , D RAIN-SOURCE VOLTAGE(V) Figure 15. Maximum Safe Operating Area 1 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0 .1 R θJC ( t) = r(t) * RθJC R = 2.5 °C/W θJC 0.1 0 .05 P(pk) 0.05 0.03 0.02 0 .02 0 .01 S ingle Pulse t1 t2 TJ - T C = P * R θJC (t) D uty Cycle, D = t1 /t2 0.1 1 t1 ,TIME (ms) 10 100 1000 0.01 0.01 Figure 16. Transient Thermal Response Curve NDP603AL.SAM