NDB7052

June 1997 NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 75 A, 50 V. RDS(ON) = 0.01 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP7052 50 50 ±20 ±40 75 225 150 1 -65 to 175 NDB7052 Units V V V Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed A PD Total Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C TJ,TSTG RθJC Rθ JA Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 62.5 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDP7052 Rev.B1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note) WDSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 75 A 550 75 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 40 V, VGS = 0 V TJ = 125°C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V ID = 250 µA, Referenced to 25 o C VDS = VGS, ID = 250 µA TJ = 125°C RDS(ON) ID(on) gFS Static Drain-Source On-Resistance VGS = 10 V, ID = 37.5 A TJ = 125°C On-State Drain Current Forward Transconductance VGS = 10 V, VDS= 10 V VDS = 10 V, ID = 37.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 60 52 2 1.4 -5.2 2.2 1.55 0.008 0.011 3 2.4 0.01 0.018 A S o 50 57 10 1 100 -100 V mV/oC µA mA nA nA mV/oC V ∆BVDSS/∆TJ IDSS ON CHARACTERISTICS (Note) ∆VGS(th)/∆TJ VGS(th) Gate Threshold VoltageTemp. Coefficient Gate Threshold Voltage Ω DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD trr Irr Input Capacitance Output Capacitance Reverse Transfer Capacitance 3400 1300 460 pF pF pF SWITCHING CHARACTERISTICS (Note) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 24 V, ID = 37.5 A, VGS = 10 V VDD = 30 V, ID = 75 A, VGS = 10 V, RGEN = 5 Ω 15 147 85 165 117 12 46 30 250 150 300 160 nS nS nS nS nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 13 A (Note) VGS = 0 V, IF = 37.5 A, dIF/dt = 100 A/µs 0.9 75 4 75 225 1.3 150 10 A A V ns A Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7052 Rev.B1 Typical Electrical Characteristics 100 I D , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE V GS = 10V 7.0 6.0 5.5 R DS(on) , NORMALIZED 2.5 80 5.0 4.5 V GS =4.0V 2 4.5 5.0 1.5 60 5.5 6.0 6.5 7.0 8.0 10.0 40 4.0 20 1 3.5 0 0 0.5 V DS 1 1.5 2 , DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.5 0 20 40 60 80 100 I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , ON-RESISTANCE (OHM) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 0.05 I D =37.5A V GS = 10V 0.04 ID=37.5A RDS(ON) , NORMALIZED 0.03 0.02 125°C 0.01 25°C 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. 60 60 V DS = 10V ID , DRAIN CURRENT (A) 50 40 30 20 10 0 I S , REVERSE DRAIN CURRENT (A) VGS =0V TJ = 125°C 25°C -55°C 10 5 1 0.5 0.1 0.01 0.001 0.0001 0 T = -55°C J 25°C 125°C 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS , GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDP7052 Rev.B1 Typical Electrical Characteristics (continued) 10 VGS , GATE-SOURCE VOLTAGE (V) 6000 I D = 37.5A 8 VDS = 12V 24V CAPACITANCE (pF) 48V Ciss 2000 6 Coss 1000 4 500 Crss f = 1 MHz VGS = 0V 2 200 1 0 5 10 20 50 0 20 40 60 80 100 120 140 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8.Capacitance Characteristics. 400 200 I D , DRAIN CURRENT (A) 100 50 20 10 5 2 1 0.5 0.5 R DS (O N 2000 it Lim ) 100 1ms 10 ms µs 1500 POWER (W) SINGLE PULSE RθJC =1° C/W TC = 25°C 10 0m s 1000 DC VGS = 10V SINGLE PULSE Rθ JC= 1 o C/W TC = 25 °C 1 3 5 10 20 30 80 500 0 0.1 0.3 1 3 10 30 100 300 1,000 V DS , DRAIN-SOURCE VOLTAGE (V)) SINGLE PULSE TIME (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 0.1 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 R θ JC (t) = r(t) * RθJC RθJC = 1°C/W P(pk) 0.1 0.05 0.05 0.03 0.02 0.02 0.01 Single Pulse t1 t2 TJ - TC = P * R θJC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 0.01 0.01 0.05 Figure 11. Transient Thermal Response Curve. NDP7052 Rev.B1 NDP7052 Rev.B1 NDP7052 Rev.B1