NDH8321C

January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Ch 3.8 A, 20 V, RDS(ON)=0.035 Ω @ VGS= 4.5 V RDS(ON)=0.045 Ω @ VGS=2.7 V P-Ch -2.7 A, -20V, RDS(ON)=0.07Ω @ VGS= -4.5 V RDS(ON)=0.095 Ω @ VGS= -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. _______________________________________________________________________________ D2 D2 D1 D1 S2 S1 G1 G2 5 6 7 8 4 3 2 1 SuperSOT -8 Mark: .8321C TM Absolute Maximum Ratings Symbol Parameter TA= 25°C unless otherwise noted N-Channel P-Channel Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1) 20 ±8 3.8 15 (Note 1) -20 ±8 -2.7 -10 0.8 -55 to 150 V V A PD TJ,TSTG Power Dissipation for Single Operation W °C Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 156 40 °C/W °C/W © 1999 Fairchild Semiconductor Corporation NDH8321C Rev.C1 Electrical Characteristics (T Symbol Parameter OFF CHARACTERISTICS A = 25°C unless otherwise noted) Conditions Type Min Typ Max Units BVDSS IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA VDS = 16 V, VGS = 0 V TJ = 55oC VDS = -16 V, VGS = 0 V TJ = 55oC N-Ch P-Ch N-Ch 20 -20 1 10 V V µA µA µA µA nA nA Zero Gate Voltage Drain Current P-Ch -1 -10 IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ = 125 C VDS = VGS, ID = -250 µA TJ = 125oC o All All 100 -100 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage N-Ch 0.4 0.3 0.7 0.45 -0.7 -0.5 0.029 0.043 0.036 1 0.8 -1 -0.8 0.035 0.063 0.045 0.07 0.125 0.095 V P-Ch N-Ch TJ = 125oC -0.4 -0.3 RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 3.8 A VGS = 2.7 V, ID = 3.3 A VGS = -4.5 V, ID = -2.7 A TJ = 125 C VGS = -2.7 V, ID = -2.3A o Ω P-Ch 0.061 0.087 0.082 ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V VGS = 2.7 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VGS = -2.7 V, VDS = -5 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 15 5 -10 -3 15 8 700 865 370 415 145 150 A gFS Forward Transconductance VDS = 5 V, ID = 3.8 A VDS = -5 V, ID = -2.7 A S DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz P-Channel VDS = -10 V, VGS = 0 V, f = 1.0 MHz pF pF pF NDH8321C Rev.C1 Electrical Characteristics (T Symbol Parameter SWITCHING CHARACTERISTICS (Note 2) A = 25°C unless otherwise noted) Conditions Type Min Typ Max Units tD(on) tr tD(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel VDD = 5 V, ID = 1 A, VGEN = 4.5 V, RGEN = 6 Ω P-Channel VDD = -5 V, ID = -1 A, VGEN = -4.5 V, RGEN = 6 Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 8 11 22 25 48 78 23 55 19.6 16 2.5 2.4 6.5 5.1 15 22 40 50 90 150 40 100 28 23 ns ns ns ns nC nC nC N-Channel VDS = 10 V, ID = 3.8 A, VGS = 4.5 V P-Channel VDS = -10 V, ID = -2.7 A, VGS = -4.5 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.67 A VGS = 0 V, IS = -0.67 A N-Ch P-Ch (Note2) (Note2) 0.67 -0.67 0.65 -0.7 1.2 -1.2 A V N-Ch P-Ch 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD(t ) = TJ −T A R θJ A(t ) = TJ −T A R θJ C R θCA(t ) + = I 2 (t) × RDS(ON)@ J T D Typical RθJA for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDH8321C Rev.C1 Typical Electrical Characteristics: N-Channel 20 2 V I D , DRAIN-SOURCE CURRENT (A) 16 GS = 4 .5V 3 .0 2 .5 DRAIN-SOURCE ON-RESISTANCE 1 .8 2 .7 R DS(on) , NORMALIZED 2 .0 12 VGS = 2.0V 1 .6 1 .4 2 .5 2 .7 3 .0 3 .5 4 .0 4 .5 8 1 .2 1 .5 4 1 0 0 0 .5 V DS 1 1 .5 2 , DRAIN-SOURCE VOLTAGE (V) 2 .5 3 0 .8 0 4 8 12 I D , DRAIN CURRENT (A) 16 20 Figure 1. N-Channel On-Region Characteristics. Figure 2. N-Channel On-Resistance Variation with Gate Voltage and Drain Current. 1.8 2 DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.6 I D = 3.8A V GS = 4.5V R DS(on) , NORMALIZED 1 .5 V G S = 4 .5 V TJ = 125°C R DS(ON) , NORMALIZED 1.4 2 5°C 1 1.2 -55°C 0 .5 1 0.8 0.6 -50 0 -25 0 25 50 75 100 T , JUNCTION TEM PERATURE (°C) J 125 150 0 4 I D 8 12 , DRAIN CURRENT (A) 16 20 Figure 3. N-Channel On-Resistance Variation with Temperature. Figure 4. N-Channel On-Resistance Variation with Drain Current and Temperature. 15 GATE-SOURCE THRESHOLD VOLTAGE VDS = 5V 12 I , DRAIN CURRENT (A) T = -55°C J 1 .3 25°C 125°C 1 .2 1 .1 1 0 .9 0 .8 0 .7 0 .6 0 .5 -50 VDS = VGS I D = 250µA 9 6 D 3 0 0 0 .5 1 1 .5 2 VGS , GATE TO SOU RCE VOLTAGE (V) 2 .5 V th, NORMALIZED -25 0 25 50 75 100 T , JUNCTION TEM PERATURE (°C) J 125 150 Figure 5. N-Channel Transfer Characteristics. Figure 6. N-Channel Gate Threshold Variation with Temperature. NDH8321C Rev.C1 Typical Electrical Characteristics: N-Channel (continued) 1 .1 5 1 .1 5 DRAIN-SOURCE BREAKDOWN VOLTAGE DRAIN-SOURCE BREAKDOWN VOLTAGE ID = 250µA 1 .1 ID = 250µA 1 .1 BV DSS , NORMALIZED BV DSS , NORMALIZED 1 .0 5 1 .0 5 1 1 0 .9 5 0 .9 5 0 .9 -5 0 -2 5 0 T J 25 50 75 100 , JUNCTION TEMPERATURE (°C) 125 150 0 .9 -5 0 -2 5 0 T J 25 50 75 100 , JUNCTION TEMPERATURE (°C) 125 150 Figure 7. N-Channel Breakdown Voltage Variation with Temperature. Figure 8. N-Channel Body Diode Forward Voltage Variation with Current and Temperature. 2500 2000 5 I D = 3.8A , GATE-SOURCE VOLTAGE (V) 4 VDS = 5V 1500 10V 15V CAPACITANCE (pF) 1000 Ci ss 500 3 Co ss 2 300 200 f = 1 MHz V GS = 0V 100 0 .1 V 0 .2 0 .5 1 3 5 V DS , DRAIN TO SOURCE VOLTAGE (V) 10 20 0 0 5 10 15 Q g , GATE CHARGE (nC) 20 25 GS Cr ss 1 Figure 9. N-Channel Capacitance Characteristics. 30 Figure 10. N-Channel Gate Charge Characteristics. , TRANSCONDUCTANCE (SIEMENS) V DS = 5V 25 TJ = -55°C 2 5°C 20 1 25°C 15 10 5 g 0 0 4 I D FS 8 12 , DRAIN CURRENT (A) 16 20 Figure 11. N-Channel Transconductance Variation with Drain Current and Temperature. NDH8321C Rev.C1 Typical Electrical Characteristics: P-Channel (continued) -15 V GS =-4.5V I D , DRAIN-SOURCE CURRENT (A) 2 .5 -3 .5 -3 .0 -2 .7 -2 .5 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 -12 V GS = -2.0V -9 -2 .0 -2.5 1 .5 -2.7 -3.0 -3.5 -4.5 -6 1 -3 -1 .5 0 0 .5 0 -1 -2 -3 -4 0 -3 I D V DS , DRAIN-SOURCE VOLTAGE (V) -6 -9 , DRA IN CURRENT (A) -12 -15 Figure 12. P-Channel On-Region Characteristics. Figure 13. P-Channel On-Resistance Variation with Gate Voltage and Drain Current. 1 .6 1.8 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -2.7A VGS = -4.5V 1.6 1.4 1.2 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 .4 V GS = -4.5V TJ = 125°C 1 .2 25°C 1 0.8 0.6 0.4 -55°C 1 0 .8 0 .6 -50 -25 0 25 50 75 100 T , JUNCTION TEM PERATURE (°C) J 125 150 0 -3 -6 -9 I D , DRAIN CURRENT (A) -12 -15 Figure 14. P-Channel On-Resistance Variation with Temperature. Figure 15. P-Channel On-Resistance Variation with Drain Current and Temperature. -8 GATE-SOURCE THRESHOLD VOLTAGE 1 .2 V DS = -5V -6 T J = -55°C 25°C 125°C V GS(th) , NORMALIZED 1 .1 1 0 .9 0 .8 0 .7 0 .6 0 .5 -50 VDS = V GS I D = -250µA I D , DRAIN CURRENT (A) -4 -2 0 -0.5 -1 -1.5 -2 VGS , GATE TO SOURCE VOLTAGE (V) -2.5 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 16. P-Channel Transfer Characteristics. Figure 17. P-Channel Gate Threshold Variation with Temperature. NDH8321C Rev.C1 Typical Electrical Characteristics: P-Channel (continued) 1 .1 10 DRAIN-SOURCE BREAKDOWN VOLTAGE I D = - 250µA -I , REVERSE DRAIN CURRENT (A) 1 .0 8 1 .0 6 1 .0 4 1 .0 2 1 0 .9 8 0 .9 6 0 .9 4 -50 3 1 0 .5 VGS = 0V T J = 125°C BV DSS , NORMALIZED 25°C 0 .1 - 55°C 0 .01 0 .001 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 S 0 .0001 0 0 .2 0 .4 0 .6 0 .8 1 -VSD , BODY DIODE FORW A RD VOLTAGE (V) 1 .2 Figure 18. P-Channel Breakdown Voltage Variation with Temperature. Figure 19. P-Channel Body Diode Forward Voltage Variation with Current and Temperature. 2500 5 I 1500 -V GS , GATE-SOURCE VOLTAGE (V) D = -2.7A V DS = -5V -1 0 V -1 5 V 4 CAPACITANCE (pF) 1000 Ci ss 3 500 Co ss 2 300 200 f = 1 MHz V GS = 0 V Cr ss 1 100 0 .1 0 0 .2 0 .5 1 2 5 -VDS , DRAIN TO SOURCE VOLTAGE (V) 10 20 0 5 10 Q g , GATE CHARGE (nC) 15 20 Figure 20. P-Channel Capacitance Characteristics. Figure 21. P-Channel Gate Charge Characteristics. 20 g FS, TRANSCONDUCTANCE (SIEMENS) V DS = -4.5V 16 T J = -55°C 2 5°C 12 1 25°C 8 4 0 0 -4 -8 -12 I D , DRAIN CURRENT (A) -16 -20 Figure 22. P-Channel Transconductance Variation with Drain Current and Temperature. NDH8321C Rev.C1 Typical Thermal Characteristics: N & P-Channel 30 10 R N) LIM IT (O DS 10 0 1 m us s -I D , DRAIN CURRENT (A) 15 10 5 2 1 0.5 RD S N (O IM )L IT 1m 10 ms s I D , DRAIN CURRENT (A) 10 10 3 1 0 .3 0 .1 0 .03 0 .01 0 .1 ms s 10 0m 0m s 1s VGS = 4.5V SINGLE PULSE RθJ A = See Note 1c T A = 25°C 1s 10 s 10 s DC 0.1 0.0 5 V GS = -4.5V DC SINGLE PULSE RθJA = See Note 1 A TA = 25°C 0 .5 1 2 5 10 - V DS , DRAIN-SOURCE VOLTAGE (V) 20 30 0 .2 0 .5 1 2 5 10 V DS , DRAIN-SOURCE VOLTAGE (V) 30 0.0 1 0.1 0 .2 Figure 23. N-Channel Maximum Safe Operating Area. Figure 24. P-Channel Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE D = 0 .5 R 0 .1 0 .2 0 .1 0 .05 0 .02 0 .0 1 S ingle Pulse θJA ( t) = r(t) * R θJA R JA = See Note 1 θ P(pk) 0 .0 1 t1 t2 TJ - TA = P * R (t) θJA D uty Cycle, D = t 1 / t 2 100 300 0 .0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0.1 t 1 , TIM E (sec) 1 10 Figure 25. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note1 . Transient thermal response will change depending on the circuit board design. VDD V IN D t on t d(on) tr 90% t off t d(off) 90% tf RL V OUT DUT VOUT VGS 10% 10% 90% R GEN G V IN S 10% 50% 50% P ULSE W IDTH Figure 26. N or P-Channel Switching Test Circuit. Figure 27. N or P-Channel Switching Waveforms. NDH8321C Rev.C1 SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. F63TNR Label Anti static Cover Tape Static Dissi pat ive Emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no f l ow c ode ) D84Z TNR 500 7" Dia 184x187x47 1,000 0.0416 0.0980 TNR 3,000 13" D ia 343x64x343 6,000 0.0416 0.5615 SSOT-8 Unit Orientation 343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons F63TNR Label F63TNR Label F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label LOT: CBVK741B019 FSID: FDR835N QTY: 3000 SPEC: SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets August 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-8 (12mm) A0 4.47 +/-0.10 B0 5.00 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.50 +/-0.10 E1 1.75 +/-0.10 E2 10.25 mi n F 5.50 +/-0.05 P1 8.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.280 +/-0.150 Wc 9.5 +/-0.025 Tc 0.06 +/-0.02 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Si de or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-8 Reel Configuration: Figur e 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 12mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 5.906 150 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 – 0.606 11.9 – 15.4 0.469 – 0.606 11.9 – 15.4 12mm 13" Dia © 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOT™-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D