NDH8504P

February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. TM Features -2.7 A, -30 V. RDS(ON) = 0.07Ω @ VGS = -10 V RDS(ON) = 0.115 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range (Note 1) (Note 1) NDH8504P -30 ±20 -2.7 -8 0.8 -55 to 150 Units V V A W °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 156 40 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDH8504P Rev.C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -24V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = - 250 µA TJ= 125°C Static Drain-Source On-Resistance VGS = -10 V, ID = -2.7 A TJ= 125°C VGS = -4.5 V, ID = -2.1 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current VGS = -10 V, VDS = -5 V VGS = -4.5 V, VDS = -5 V Forward Transconductance VDS = -10 V, ID = -2.7 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 560 340 130 pF pF pF -8 -3 5.5 S -1 -0.8 -1.6 -1.2 0.062 0.088 0.102 -30 -1 -10 100 -100 V µA µA nA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage -3 -2.4 0.07 0.125 0.115 A V Ω SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, ID = -2.7 A, VGS = -10 V VDD = -10 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω 13 16 35 40 19 3.8 4.7 25 30 70 80 27 ns ns ns ns nC nC nC NDH8504P Rev.C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max -0.67 (Note 2) Units A V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. T J−T A R θJ At ) ( T J−T A Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A -0.74 -1.2 PD (t ) = = R θJ C R θCA t ) + ( = I 2 (t ) × RDS(ON)@ J T D Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDH8504P Rev.C Typical Electrical Characteristics -10 VGS = -10V -6.0 - 5.0 - 4.5 DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE CURRENT (A) 3 -8 -4.0 R DS(on) NORMALIZED , 2.5 VGS = -3.5V -4.0 -4.5 -5.0 -6.0 -7.0 -10 -6 -3.5 2 -4 -3.0 -2 1.5 1 I D 0 0.5 0 -0.5 -1 -1.5 -2 -2.5 -3 0 -2 I D V DS , DRAIN-SOURCE VOLTAGE (V) -4 -6 , DRAIN CURRENT (A) -8 -10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.8 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 I D = -2.7A R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 V GS = -10V 1.6 1.4 1.2 1 V GS = -10V TJ = 125°C 1.2 25°C -55°C 1 0.8 0.6 0.4 0.8 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) J 125 150 0 -2 -4 -6 I D , DRAIN CURRENT (A) -8 -10 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. -10 1.2 V DS = -10V -8 I D , DRAIN CURRENT (A) T J = -55°C 125°C GATE-SOURCE THRESHOLD VOLTAGE 25°C VDS = V G S 1.1 I D = -250µA V GS(th), NORMALIZED 1 -6 0.9 -4 0.8 -2 0.7 0 -1 -2 -3 -4 V GS , GATE TO SOURCE VOLTAGE (V) -5 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) J 125 150 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDH8504P Rev.C Typical Electrical Characteristics 1.1 DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 10 I D = - 250µA -I , REVERSE DRAIN CURRENT (A) 3 1 0.5 0.1 VGS = 0V T J = 125°C 25°C BV DSS , NORMALIZED 0.01 - 55°C 0.001 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 S 0.0001 0.2 0.4 -V SD 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 1500 1000 -V GS , GATE-SOURCE VOLTAGE (V) 10 V I 8 D = -2.7A DS =-5V -10V -15V 600 CAPACITANCE (pF) 400 Ci ss Co ss 6 200 Cr ss 100 4 f = 1 MHz V GS = 0 V 2 50 0 .1 0 .2 -V 0 .5 1 2 5 10 , DRAIN TO SOURCE VOLTAGE (V) DS 20 30 0 0 4 8 12 Q g , GATE CHARGE (nC) 16 20 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. -VDD V IN D ton t off tr 90% RL V OUT t d(on) t d(off) 90% tf VGS R GEN VOUT G DUT 10% 10% 90% S V IN 10% 50% 50% PULSE WIDTH INVERTED Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDH8504P Rev.C Typical Electrical and Thermal Characteristics gFS , TRANSCONDUCTANCE (SIEMENS) 12 15 10 V DS = -10V TJ = -55°C 25°C 125°C -I , DRAIN CURRENT (A) 5 RD S(O N) LIM IT 1m 10 ms s 9 2 1 0.5 10 0m s 6 1s 0.1 0.05 V GS = -10V SINGLE PULSE R θJ A 10 s DC 3 D = See Note 1 A TA = 25°C 0.5 -V 1 2 5 10 , DRAIN-SOURCE VOLTAGE (V) 20 30 0 0 -3 -6 -9 -12 -15 0.01 0.1 0.2 ID , DRAIN CURRENT (A) DS Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE D = 0 .5 0 .2 0 .1 0 .05 0 .02 r(t), NORMALIZED EFFECTIVE 0.1 R θJA ( t) = r(t) * R θJA R JA = See Note 1 θ P(pk) t1 S ingle Pulse 0.01 0 .01 t2 TJ - T =P *R (t) A θJA D uty Cycle, D = t 1 / t 2 0.001 0.0001 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note1 .Transient thermal response will change depending on the circuit board design. NDH8504P Rev.C SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. F63TNR Label Anti static Cover Tape Static Dissi pat ive Emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no f l ow c ode ) D84Z TNR 500 7" Dia 184x187x47 1,000 0.0416 0.0980 TNR 3,000 13" D ia 343x64x343 6,000 0.0416 0.5615 SSOT-8 Unit Orientation 343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons F63TNR Label F63TNR Label F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label LOT: CBVK741B019 FSID: FDR835N QTY: 3000 SPEC: SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets August 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-8 (12mm) A0 4.47 +/-0.10 B0 5.00 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.50 +/-0.10 E1 1.75 +/-0.10 E2 10.25 mi n F 5.50 +/-0.05 P1 8.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.280 +/-0.150 Wc 9.5 +/-0.025 Tc 0.06 +/-0.02 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Si de or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-8 Reel Configuration: Figur e 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 12mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 5.906 150 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 – 0.606 11.9 – 15.4 0.469 – 0.606 11.9 – 15.4 12mm 13" Dia © 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOT™-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.