NDP508B

May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL TC = 25°C unless otherwise noted NDP508A NDP508AE NDB508A NDB508AE 80 80 ±20 ±40 19 57 75 0.5 NDP508B NDP508BE NDB508B NDB508BE Units V V V V 17 51 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP508.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 19 A Type NDP508AE NDP508BE NDB508AE NDB508BE Min Typ Max 55 19 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 9.5 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP508A NDP508AE NDB508A TJ = 125°C NDB508AE NDP508B NDP508BE NDB508B TJ = 125°C NDB508BE NDP508A NDP508AE NDB508A NDB508AE NDP508B NDP508BE NDB508B NDB508BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 9.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 19 2 1.4 2.9 2.3 0.057 0.097 80 250 1 100 -100 4 3.6 0.08 0.16 0.1 0.2 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 8.5 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 17 A 6 9.6 750 200 60 900 250 90 S pF pF pF Ciss Coss Crss NDP508.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 40 V, ID = 19 A, VGS = 10 V, RGEN = 15 Ω Type ALL ALL ALL ALL Min Typ 8.5 66 31 48 23.5 4.5 11.8 Max 20 110 50 80 34 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 64 V, ID = 19 A, VGS = 10 V ALL ALL ALL NDP508A NDP508AE NDB508A NDB508AE NDP508B NDP508BE NDB508B NDB508BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 19 A 17 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP508A NDP508AE NDB508A NDB508AE NDP508B NDP508BE NDB508B NDB508BE 57 A 51 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 9.5 A VGS = 0 V, IS = 19 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.87 0.79 78 5.2 1.3 1.2 110 75 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 2 62.5 °C/W °C/W Notes: 1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%. NDP508.SAM Typical Electrical Characteristics 50 2 V GS = 2 0V I D , DRAIN-SOURCE CURRENT (A) 40 12 R DS(on) , NORMALIZED 8 .0 DRAIN-SOURCE ON-RESISTANCE 10 1.8 1.6 1.4 V GS = 6V 7.0 8 .0 10 30 7 .0 20 1.2 1 0.8 0.6 0 10 20 30 40 I D , DRAIN CURRENT (A) 12 20 6 .0 10 5 .0 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 6 50 60 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 2.5 DRAIN-SOURCE ON-RESISTANCE I D = 9.5A DRAIN-SOURCE ON-RESISTANCE V GS = 1 0V V G S = 10V 2 R DS(on), NORMALIZED TJ = 125°C 2 R DS(ON) , NORMALIZED 1.5 1.5 2 5°C 1 1 - 55°C 0.5 0 10 20 30 40 50 0.5 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 ID , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 20 1.2 V DS = 10V 15 GATE-SOURCE THRESHOLD VOLTAGE (V) TJ = -55°C 25 125 V DS = V 1.1 GS I D = 250 µA I D, DRAIN CURRENT (A) Vth , NORMALIZED 1 10 0.9 0.8 5 0.7 0 2 3 V GS 4 5 6 7 8 0.6 -50 -25 0 , GATE TO SOURCE VOLTAGE (V) 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP508.SAM Typical Electrical Characteristics (continued) 1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) I D = 250µA 1.1 50 30 I S , REVERSE DRAIN CURRENT (A) 10 5 VGS = 0 V TJ = 125°C 25°C - 55°C BV DSS , NORMALIZED 1.05 1 1 0.95 0.1 0.9 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 V GS , GATE-SOURCE VOLTAGE (V) 1600 1000 CAPACITANCE (pF) C iss I D = 19A 15 V DS = 12V 24 64 500 C oss 200 10 100 5 f = 1 MHz VGS = 0V 1 2 3 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V) C rss 40 0 50 0 10 20 Q g , GATE CHARGE (nC) 30 40 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP508.SAM Typical Electrical Characteristics (continued) 15 , TRANSCONDUCTANCE (SIEMENS) T J = -55°C 12 VGS = 10V 1 25°C L tp + VDD - 2 5°C 9 6 t p is adjusted to reach the desired peak inductive current, I L . tp IL 20 BV DSS 3 FS VD S = 1 0V 0 0 4 8 12 ID , DRAIN CURRENT (A) 16 VDD g Figure 13. Transconductance Variation with Drain Current and Temperature. 100 50 Figure 14. Unclamped Inductive Load Circuit and Waveforms. RD I , DRAIN CURRENT (A) 20 10 O S( N) Lim it 10 10 1m 10 ms 0µ µs s s 5 VGS = 20V 2 1 0.5 1 2 DC SINGLE PULSE T C = 25°C D 3 5 10 20 30 V GS , DRAIN-SOURCE VOLTAGE (V)) 50 100 Figure 15. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 R θJC ( t) = r(t) * RθJC R = 2.0 °C/W θJC 0.1 0.05 P(pk) 0.05 0.03 0.02 0.02 0.01 S ingle Pulse t1 t2 TJ - T C = P * RθJC (t) D uty Cycle, D = t 1 /t2 0.1 1 t1 ,TIME (m s) 10 100 1000 0.01 0.01 Figure 16. Transient Thermal Response Curve. NDP508.SAM