NDP6050

March 1996 NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 48A, 50V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP6050 50 50 ± 20 ± 40 48 144 100 0.67 -65 to 175 275 NDB6050 Units V V V Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed A PD Total Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation NDP6050 Rev. A1 / NDB6050 Rev. B Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) WDSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 48 A 200 48 mJ A Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 50 V, VGS = 0 V TJ = 125°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA TJ = 125°C Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A TJ = 125°C On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 24 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 48 10 19 2 1.4 2.9 2.3 0.02 0.032 50 250 1 100 -100 V µA mA nA nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 4 3.6 0.025 0.04 A S V Ω DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance 1190 475 150 1800 800 400 pF pF pF SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 48 A, VGS = 10V VDD = 30 V, ID = 48 A, VGS = 10 V, RGEN = 7.5 Ω 10 145 28 77 39 7.6 22 20 300 60 150 70 nS nS nS nS nC NDP6050 Rev. A1 / NDB6050 Rev. B Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A (Note 1) TJ = 125°C trr Irr Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IF = 48 A, dIF/dt = 100 A/µs 35 2 0.9 0.8 87 3.6 48 144 1.3 1.2 140 8 ns A A A V THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.5 62.5 °C/W °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6050 Rev. A1 / NDB6050 Rev. B Typical Electrical Characteristics 100 2 VGS = 2 0V I D , DRAIN-SOURCE CURRENT (A) 80 12 10 DRAIN-SOURCE ON-RESISTANCE 9 .0 8 .0 R DS(on), NORMALIZED 1.8 1.6 1.4 VGS = 6 .0V 7.0 8 .0 9 .0 60 7 .0 40 1.2 1 0.8 0.6 10 12 20 6 .0 20 5 .0 0 0 1 V DS 2 3 4 , DRAIN-SOURCE VOLTAGE (V) 5 6 0 20 40 60 I D , DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 2.5 V GS = 10V R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.75 I D = 24A 2 V G S = 1 0V TJ = 125°C R DS(ON), NORMALIZED 1.5 1.25 1.5 1 2 5°C 1 0.75 - 55°C 0.5 0.5 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 0 20 40 60 80 100 I D , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Drain Current and Temperature 60 GATE-SOURCE THRESHOLD VOLTAGE 1.2 V DS = 10V 50 I D , DRAIN CURRENT (A) T = -55°C J 125°C 2 5°C V GS(th), NORMALIZED 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 V DS = V GS I D = 250µA 40 30 20 10 0 2 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V) -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) J 150 175 Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature NDP6050 Rev. A1 / NDB6050 Rev. B Typical Electrical Characteristics (continued) 1.15 BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 60 I D = 250µA 10 I S , REVERSE DRAIN CURRENT (A) 1.1 V GS = 0 V 1 T J = 125°C 1.05 2 5°C - 55°C 0.1 1 0.01 0.95 0.001 0.9 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 0.0001 0.2 0.4 0.6 0.8 1 1.2 1.4 V S D , BODY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 3000 2000 V GS , GATE-SOURCE VOLTAGE (V) 20 I D = 48A Ci ss 15 V DS = 12V 4 8V 2 4V CAPACITANCE (pF) 1000 500 300 Co ss 10 f = 1 MHz 200 5 V GS = 0 V Cr ss 100 1 2 V DS 0 3 5 10 20 30 50 0 20 , DRAIN TO SOURCE VOLTAGE (V) 40 Q g , GATE CHARGE (nC) 60 80 Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics VDD t d(on) t on tr 90% to f f t d(off) 90% tf V IN D RL V OUT DUT VGS VO U T 10% 10% INVERTED R GEN G 90% V IN S 10% 50% 50% P ULSE W IDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms NDP6050 Rev. A1 / NDB6050 Rev. B Typical Electrical Characteristics (continued) 30 300 V DS =10V , TRANSCONDUCTANCE (SIEMENS) 24 200 TJ = -55°C 2 5°C I D , DRAIN CURRENT (A) 100 RD 50 S( O Lim N) it 10 1m 0µ s 10 µs 18 s 20 10 5 1 25°C 12 V GS = 10V SINGLE PULSE RθJC = 1.5 o C/W T C = 25°C ms 0m s DC 10 10 6 2 0 0 10 20 30 I D , DRAIN CURRENT (A) 40 50 1 1 g FS 2 3 5 10 20 30 50 100 VDS , D RAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Current and Temperature Figure 14. Maximum Safe Operating Area 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0 .1 R θJC ( t) = r(t) * RθJC R JC = 1.5 °C/W θ 0.1 0 .05 P(pk) 0.05 0.03 0.02 0.01 0.01 0 .02 0 .01 S ingle Pulse t1 t2 TJ - T C = P * R θ JC (t) D uty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t1 ,TIME (m s) 10 20 50 100 200 500 1000 0.02 0.05 Figure 15. Transient Thermal Response Curve NDP6050 Rev. A1 / NDB6050 Rev. B