NDP608BE

May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL TC = 25°C unless otherwise noted NDP608A NDP608AE NDB608A NDB608AE 80 80 ±20 ±40 36 144 100 0.67 NDP608B NDP608BE NDB608B NDB608BE Units V V V V 32 128 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP608.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 36 A Type NDP608AE NDP608BE NDB608AE NDB608BE Min Typ Max 200 36 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 18 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP608A NDP608AE NDB608A TJ = 125°C NDB608AE NDP608B NDP608BE NDB608B TJ = 125°C NDB608BE NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 18 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 36 2 1.4 2.9 2.3 0.031 0.05 80 250 1 100 -100 4 3.2 0.042 0.08 0.045 0.09 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 16 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 32 A 10 17.5 1370 390 140 1800 500 200 S pF pF pF Ciss Coss Crss NDP608.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 40 V, ID = 36 A, VGS = 10 V, RGEN = 7.5 Ω Type ALL ALL ALL ALL Min Typ 11 113 37 69 46 8 25 Max 20 190 60 110 65 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 64 V, ID = 36 A, VGS = 10V ALL ALL ALL NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 36 A 32 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE 144 A 128 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 18 A VGS = 0 V, IS = 36 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.91 0.81 88 6 1.3 1.2 125 9 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1.5 62.5 °C/W °C/W Notes: 1. NDP608A/608B and NDB608A/608B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%. NDP608.SAM Typical Electrical Characteristics 120 2 V GS = 20V I D , DRAIN-SOURCE CURRENT (A) R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 6V 12 10 1.8 1.6 1.4 1.2 1 0.8 0.6 100 7 .0 8 .0 80 8 .0 60 10 12 20 7 .0 40 6 .0 20 5 .0 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 6 0 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 3.5 I D = 18A DRAIN-SOURCE ON-RESISTANCE 2 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V 3 2.5 2 1.5 V GS = 10V GS = 1 0V R DS(ON) , NORMALIZED TJ = 125°C 1.5 2 5°C 1 1 - 55°C 0.5 0 0 20 40 60 I D , DRAIN CURRENT (A) 80 100 0.5 - 50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) J 150 175 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 40 GATE-SOURCE THRESHOLD VOLTAGE (V) 1.2 V DS = 10V 30 TJ = -55°C 25 125 V DS = V 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 GS I D = 250µA I , DRAIN CURRENT (A) 20 10 D 0 2 3 V GS Vth , NORMALIZED 4 5 6 7 8 -25 0 , GATE TO SOURCE VOLTAGE (V) 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) J 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP608.SAM Typical Electrical Characteristics (continued) 105 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 100 I D = 250µA 100 V GS = 0 V I , REVERSE DRAIN CURRENT (A) 10 5 BV DSS , NORMALIZED TJ = 125°C 25°C - 55°C 95 1 0.5 90 85 0.1 80 -50 -25 0 TJ 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 S 0.01 0.2 0.4 V SD 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 3000 2000 , GATE-SOURCE VOLTAGE (V) C i ss ID = 36A 15 V DS = 12V 64 24 1000 CAPACITANCE (pF) C o ss 300 200 10 C r ss f = 1 MHz V GS = 0 V 1 2 VDS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 5 100 V 0 0 20 40 Q g , GATE CHARGE (nC) 60 80 50 Figure 9. Capacitance Characteristics. GS Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf VIN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 36. Switching Test Circuit. Figure 12. Switching Waveforms. NDP608.SAM Typical Electrical Characteristics (continued) 30 , TRANSCONDUCTANCE (SIEMENS) VD S = 1 0V 25 T J = -55°C 2 5°C VGS = 10V L tp + VDD - 20 15 1 25°C 10 t p is adjusted to reach the desired peak inductive current, I L . tp IL BV DSS 5 FS VDD g 0 0 10 20 30 ID , DRAIN CURRENT (A) 40 50 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Unclamped Inductive Load Circuit and Waveforms. 200 100 RD I D , DRAIN CURRENT (A) S N (O im )L it 10 10 1m 10 10 ms µs 0µ s 20 10 5 s 0m DC s V GS = 20V 2 1 0.5 1 2 3 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 50 100 SINGLE PULSE T C = 25°C Figure 15. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0 .1 R θJC ( t) = r(t) * RθJC R JC = 1.5 °C/W θ 0.1 0 .05 P(pk) 0.05 0.03 0.02 0.01 0.01 0 .02 0 .01 S ingle Pulse t1 t2 TJ - T C = P * R θ JC (t) D uty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t1 ,TIME (ms) 10 20 50 100 200 500 1000 0.02 0.05 Figure 16. Transient Thermal Response Curve. NDP608.SAM