NDP610A

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL TC = 25°C unless otherwise noted NDP610A NDP610AE NDB610A NDB610AE 100 100 ±20 ±40 26 104 100 0.67 NDP610B NDP610BE NDB610B NDB610BE Units V V V V 24 96 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP610.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 26 A Type NDP610AE NDP610BE NDB610AE NDB610BE Min Typ Max 250 26 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 13 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP610A NDP610AE NDB610A TJ = 125°C NDB610AE NDP610B NDP610BE NDB610B TJ = 125°C NDB610BE NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 13 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 26 2 1.4 3 2.3 0.048 0.086 100 250 1 100 -100 4 3.2 0.065 0.13 0.08 0.16 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 12 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 24 A 10 16 1430 280 85 1800 500 200 S pF pF pF Ciss Coss Crss NDP610.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 50 V, ID = 26 A, VGS = 10 V, RGEN = 7.5 Ω Type ALL ALL ALL ALL Min Typ 11 72 40 52 47 8 22 Max 20 120 65 85 65 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 80 V, ID = 26 A, VGS = 10V ALL ALL ALL NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 26 A 24 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE 104 A 96 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 13 A VGS = 0 V, IS = 26 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.88 0.83 108 7.4 1.3 1.2 155 11 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1.5 62.5 °C/W °C/W Notes: 1. NDP610A/610B and NDB610A/610B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP610.SAM Typical Electrical Characteristics 70 2.5 V GS = 20V I D , DRAIN-SOURCE CURRENT (A) 60 50 40 30 20 10 0 0 12 10 8 .0 7 .0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 5V 6 .0 2 7 .0 8 .0 10 1.5 12 20 6 .0 1 5 .0 2 4 6 V DS , DRAIN-SOURCE VOLTAGE (V) 8 0.5 0 10 20 I D 30 40 50 , DRAIN CURRENT (A) 60 70 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 4 I D = 13A DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE V GS = 10V 2 R DS(on), NORMALIZED V G S = 1 0V 3 R DS(ON) , NORMALIZED TJ = 125°C 2 1.5 2 5°C 1 1 - 55°C 0.5 - 50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) J 150 175 0 0 20 40 I D , DRAIN CURRENT (A) 60 80 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 40 GATE-SOURCE THRESHOLD VOLTAGE (V) 1.2 V DS = 10V 30 TJ = -55°C 2 5 125 V DS = V 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 GS I D = 250µA ID , DRAIN CURRENT (A) 20 10 0 2 3 4 5 6 7 8 V GS , GATE TO SOURCE VOLTAGE (V) Vth , NORMALIZED -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP610.SAM Typical Electrical Characteristics (continued) 1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 30 I 1.1 D = 250µA I , REVERSE DRAIN CURRENT (A) 10 V GS = 0 V TJ = 125°C 25°C 1 BV DSS , NORMALIZED 1.05 - 55°C 1 0.95 0.1 0.9 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 175 S 0.01 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 3000 2000 , GATE-SOURCE VOLTAGE (V) I D = 26A C i ss 15 V DS = 20V 50 80 1000 CAPACITANCE (pF) C o ss 300 200 10 5 100 V GS = 0 V 0.2 V 0.5 DS V 0 1 2 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 50 0 20 40 Q g , GATE CHARGE (nC) 60 80 50 0.1 Figure 9. Capacitance Characteristics. GS f = 1 MHz C r ss Figure 10. Gate Charge Characteristics. VDD t d(on) t on t off tr 90% t d (off) 90% VIN D RL V OUT VOUT 10% tf VGS R GEN 10% INVERTED G DUT 90% S V IN 10% 50% 50% P ULSE W IDTH Figure 36. Switching Test Circuit. Figure 12. Switching Waveforms. NDP610.SAM Typical Electrical Characteristics (continued) 25 , TRANSCONDUCTANCE (SIEMENS) VD S = 1 0V 20 T J = -55°C 2 5°C V GS = 10V tp L + V DD - 15 1 25°C t p is adjusted to reach the desired peak inductive current, I L . tp IL BV DSS 10 5 V DD g 0 0 5 10 15 20 ID , DRAIN CURRENT (A) 25 30 Figure 13. Transconductance Variation with Drain Current and Temperature. FS Figure 14. Unclamped Inductive Load Circuit and Waveforms. 200 100 I D , DRAIN CURRENT (A) 50 RD S (O Lim N) it 10 10 1m µs 0µ s s 10 5 10 V GS = 20V 2 1 0.5 1 2 3 10 0m DC s ms SINGLE PULSE T C = 25°C 5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V) 100 150 Figure 15. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0 .1 R θJC ( t) = r(t) * RθJC R JC = 1.5 °C/W θ 0.1 0 .05 P(pk) 0.05 0.03 0.02 0.01 0.01 0 .02 0 .01 S ingle Pulse t1 t2 TJ - T C = P * R θ JC (t) D uty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t1 ,TIME (ms) 10 20 50 100 200 500 1000 0.02 0.05 Figure 16. Transient Thermal Response Curve. NDP610.SAM