NDP7051L

September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 67 A, 50 V. RDS(ON) = 0.0145 Ω @ VGS= 5 V RDS(ON) = 0.0115 Ω @ VGS= 10 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP7051L 50 50 ±16 ±25 67 200 130 0.87 -65 to 175 NDB7051L Units V V V Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed A PD Maximum Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C TJ,TSTG Operating and Storage Temperature Range © 1997 Fairchild Semiconductor Corporation NDP7051L Rev.D/NDB7051L Rev.E Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 67 A 430 67 mJ A Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 40 V, VGS = 0 V TJ = 125°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V VDS = VGS, ID = 250 µA TJ = 125°C Static Drain-Source On-Resistance VGS = 5 V, ID = 34 A TJ = 125°C VGS = 10 V, ID = 34 A ID(on) gFS On-State Drain Current Forward Transconductance VGS = 5 V, VDS = 10 V VDS = 5 V, ID = 34 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 60 50 1 0.65 1.24 0.84 0.013 0.018 0.01 50 10 1 100 100 V µA mA nA nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 2 1.5 0.0145 0.026 0.0115 A S V Ω DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance 2700 850 300 pF pF pF SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS= 12 V ID = 67 A , VGS = 5 V VDD = 25 V, ID = 34 A, VGS = 5 V, RGEN = 10 Ω RGS = 10 Ω 17 182 82 157 56 9 32 30 300 150 250 80 nS nS nS nS nC nC nC NDP7051L Rev.D/NDB7051L Rev.E Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 34 A (Note 1) TJ = 125°C trr Irr Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IF = 67 A, dIF/dt = 100 A/µs 40 2 0.92 0.83 75 3.6 67 200 1.3 1.2 150 10 A A V V ns A THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.15 62.5 °C/W °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7051L Rev.D/NDB7051L Rev.E Typical Electrical Characteristics 100 2 VGS =10V I D , DRAIN-SOURCE CURRENT (A) 80 5.0 DRAIN-SOURCE ON-RESISTANCE 4.5 4.0 R DS(on) , NORMALIZED 1.8 1.6 1.4 1.2 1 0.8 0.6 3 .5 60 VGS =3V 3 .5 4 .0 4 .5 5 .0 6 .0 10 0 20 I D 40 3.0 20 2 .5 0 0 1 2 3 4 VDS , DRAIN-SOURCE VOLTAGE (V) 5 40 60 , DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 2 DRAIN-SOURCE ON-RESISTANCE V GS = 5.0V 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 I D = 34A V G S = 5 .0V 1.5 TJ = 125°C R DS(ON) , NORMALIZED 2 5°C 1 0.5 - 55°C 0 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 0 20 I D 40 60 , DRAIN CURRENT (A) 80 100 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 60 1.3 VDS = 5V 50 25°C 125°C GATE-SOURCE THRESHOLD VOLTAGE T = -55°C J 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 -50 -25 0 VDS = VGS I D = 250µA I D, DRAIN CURRENT (A) 40 V th , NORMALIZED 30 20 10 0 1 1.5 V GS 2 2.5 3 , GATE TO SOURCE VOLTAGE (V) 3.5 4 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP7051L Rev.D/NDB7051L Rev.E Typical Electrical Characteristics (continued) 1.15 60 DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 I S , REVERSE DRAIN CURRENT (A) ID = 250µA 20 10 VGS =0V TJ = 125°C BV DSS , NORMALIZED 1 0.5 0.1 25°C 1.05 - 55°C 0.01 1 0.95 0.001 0.0001 0.9 -50 0 0.2 V SD 0.4 0.6 0.8 1 1.2 -25 0 TJ 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 , BODY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 6000 4000 V GS , GATE-SOURCE VOLTAGE (V) 3000 CAPACITANCE (pF) 2000 10 I D = 67A Ci ss 8 VDS = 12V 24V 48V 6 1000 Co ss 4 500 f = 1 MHz V GS = 0 V Cr ss 2 200 1 V DS 0 5 10 15 20 30 50 0 20 , DRAIN TO SOURCE VOLTAGE (V) 40 60 80 Q g , GATE CHARGE (nC) 100 120 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t on t off tr 90% VIN D RL V OUT DUT t d(on) t d(off) 90% tf VGEN R GEN RGS G VOUT 10% 10% INVERTED 90% S V IN 10% 50% 50% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP7051L Rev.D/NDB7051L Rev.E Typical Electrical Characteristics (continued) 75 500 , TRANSCONDUCTANCE (SIEMENS) V DS = 5V TJ = -55°C 2 5°C 200 100 I D , DRAIN CURRENT (A) 50 20 10 5 2 1 R DS (O N) 10 10 Li m it µs 0µ 50 1m 10 s 10 0 DC m s m s s 1 25°C 25 VGS = 5 V SINGLE PULSE R θJC =1.15 o C/W FS g T C = 25°C 0.2 0.5 V 1 2 5 10 20 , D RAIN-SOURCE VOLTAGE (V)) 50 80 0 0 10 20 I D 30 40 50 60 0.5 0.1 , DRAIN CURRENT (A) DS Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. 1 D = 0 .5 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 0 .1 0 .2 r(t), NORMALIZED EFFECTIVE R JC ( t) = r(t) * R JC θ θ R JC = 1.15 °C/W θ 0.1 0.05 0.03 0.02 0.01 0.01 0 .05 0 .02 0 .01 S ingle Pulse P(pk) t1 TJ t2 -TC = P *R θ JC (t) Duty Cycle, D = t 1 /t 2 0.05 0.1 0.5 1 t 1 5 ,TIME (ms) 10 50 100 500 1000 Figure 15. Transient Thermal Response Curve. NDP7051L Rev.D/NDB7051L Rev.E TO-220 Tape and Reel Data and Package Dimensions TO-220 Tube Packing Configuration: Figur e 1.0 Packaging Description: TO-220 parts are ship ped normally in tube. The tube is made of PVC plastic treated with anti -stati c agent.These tubes in standard option are placed inside a dissipative plastic bag, barcode labeled, and placed inside a box made of recyclable corrugated pa per. One box contains two ba gs maximum (see fig. 1.0). And one or several o f these boxes are placed inside a labeled shipp ing bo x whic h c omes in different sizes dependi ng on the nu mber of parts ship ped. The other option comes in bulk as described in the Packagin g Information table. The unit s in this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually labeled and placed ins ide a larger box (see fig. 3.0). These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. 45 unit s per Tube 12 Tubes per Bag 2 bag s per Box Conduct ive Plasti c B ag 530mm x 130mm x 83mm Intermediate box TO-220 Packaging Information: Figure 2.0 TO-220 Packaging Information Packaging Option Packaging type Qty per Tube/Box Box Dimension (mm) Max qty per Box Weight per unit (gm) Note/Comments Standard (no f l ow code ) FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION 1080 uni ts maxi mum quant it y per bo x S62Z BULK 300 LOT: CBVK741B019 QTY: HTB:B 1080 NSID: FDP7060 SPEC: Rail/Tube 45 530x130x83 1,080 1.4378 D/C1: D9842 SPEC REV: QA REV: B2 114x102x51 1,500 1.4378 FSCINT Label (FSCINT) TO-220 bulk Packing Configuration: Figure 3.0 FSCINT Label An ti-stati c Bubbl e Sheet s 530mm x 130mm x 83mm Intermediate box 1500 uni ts maxi mum quant it y per intermediate box 300 units per EO70 box 114mm x 102mm x 51mm EO70 Immed iate Box 5 EO70 boxe s per per Interm ediate Bo x FSCINT Label TO-220 Tube Configuration: Figure 4.0 Note: All dim ensions are in inches 0.123 +0.001 -0.003 0.165 0.080 0.450 ±.030 1.300 ±.015 0.032 ±.003 0.275 F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L 0.160 20.000 +0.031 -0.065 0.800 0.275 August 1999, Rev. B TO-220 Tape and Reel Data and Package Dimensions, continued TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 September 1998, Rev. A TO-263AB/D2PAK Tape and Reel Data and Package Dimensions TO-263AB/D2PAK Packaging Configuration: Figure 1.0 Packaging Description: EL ECT ROST AT IC SEN SIT IVE DEVICES DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms Antistatic Cover Tape ESD Label TO-263/D2PAK parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 800 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled, dry packed, and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains one reel maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. CAUTION Static Dissipative Embossed Carrier Tape Moisture Sensitive Label F63TNR Label Customized Label TO-263AB/D2PAK Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel Note/Comments Standard (no flow code) TNR 800 13" Dia 359x359x57 800 1.4378 1.6050 L86Z Rail/Tube 45 530x130x83 1,080 1.4378 - TO-263AB/D2PAK Unit Orientation 359mm x 359mm x 57mm Standard Intermediate box ESD Label F63TNR Label sample F63TNR Label LOT: CBVK741B019 FSID: FDB6320L QTY: 800 SPEC: DRYPACK Bag (F63TNR)3 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F TO-263AB/D2PAK Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 400mm minimum or 25 empty pockets Leader Tape 1520mm minimum or 95 empty pockets September 1999, Rev. B F9835 FDB603AL F9835 FDB603AL F9835 FDB603AL F9835 FDB603AL Moisture Sensitive Label TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued TO-263AB/D2PAK Embossed Carrier Tape Configuration: Figure 3.0 P0 T E1 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type TO263AB/ D2PAK (24mm) A0 10.60 +/-0.10 B0 15.80 +/-0.10 W 24.0 +/-0.3 D0 1.55 +/-0.05 D1 1.60 +/-0.10 E1 1.75 +/-0.10 E2 22.25 min F 11.50 +/-0.10 P1 16.0 +/-0.1 P0 4.0 +/-0.1 K0 4.90 +/-0.10 T 0.450 +/-0.150 Wc 21.0 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 10 deg maximum Typical component cavity center line 0.9mm maximum B0 10 deg maximum component rotation 0.9mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement TO-263AB/D Figure 4.0 2PAK Reel Configuration: Component Rotation W1 Measured at Hub Dim A Max B Min Dim C Dim A max Dim N Dim D min DETAIL AA See detail AA W3 13" Diameter Option W2 max Measured at Hub Dimensions are in inches and millimeters Tape Size 24mm Reel Option 13" Dia Dim A 13.00 330 Dim B 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 Dim N 4.00 100 Dim W1 0.961 +0.078/-0.000 24.4 +2/0 Dim W2 1.197 30.4 Dim W3 (LSL-USL) 0.941 – 0.1.079 23.9 – 27.4 August 1999, Rev. B TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued TO-263AB/D2PAK (FS PKG Code 45) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 August 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D