NDP708BE

May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TC = 25°C unless otherwise noted NDP708A NDP708AE NDB708A NDB708AE 80 80 ±20 ±40 60 180 150 1 NDP708B NDP708BE NDB708B NDB708BE Units V V V V 54 162 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP708.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 60 A Type NDP708AE NDP708BE NDB708AE NDB708BE Min Typ Max 600 60 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TJ = 125°C VGS = 10 V, ID = 27 A TJ = 125°C ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 30 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 60 2 1.4 2.6 1.9 0.016 0.025 80 250 1 100 -100 4 3.6 0.022 0.04 0.25 0.044 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) 54 A 16 33 2800 780 285 3600 1000 400 S pF pF pF Ciss Coss Crss NDP708.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 40 V, ID = 60 A, VGS = 10 V, RGEN = 5 Ω Type ALL ALL ALL ALL Min Typ 15 143 58 108 94 16 51 Max 25 230 90 180 130 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 64 V, ID = 60 A, VGS = 10 V ALL ALL ALL NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 60 A 54 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE 180 A 162 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 30 A VGS = 0 V, IS = 60 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.91 0.82 98 6.5 1.3 1.2 140 10 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1 62.5 °C/W °C/W Notes: 1. NDP708A/708B and NDB708A/708B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%. NDP708.SAM Typical Electrical Characteristics 120 2 V GS = 2 0V I D , DRAIN-SOURCE CURRENT (A) 100 10 8 .0 7 .0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 V GS = 5V 6 .0 7 .0 8 .0 10 80 6 .0 60 40 5 .0 1 0.8 0.6 20 20 4 .0 0 0 1 V DS 2 3 , DRAIN-SOURCE VOLTAGE (V) 4 5 0 20 40 60 80 I , DRAIN CURRENT (A) D 100 120 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.4 2 ID = 30A DRAIN-SOURCE ON-RESISTANCE 2 DRAIN-SOURCE ON-RESISTANCE V 1.8 1.6 1.4 1.2 GS = 1 0V TJ = 125°C V GS = 10V R DS(on), NORMALIZED R DS(ON) , NORMALIZED 1.6 1.2 2 5°C 1 0.8 0.6 0 20 40 60 I D , DRAIN CURRENT (A) 80 100 0.8 - 55°C 0.4 - 50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 60 GATE-SOURCE THRESHOLD VOLTAGE (V) 1.2 V DS = 10V 50 I D, DRAIN CURRENT (A) TJ = -55°C 25 125 V DS = V 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 GS I D = 250µA 40 30 20 10 0 2 3 V GS Vth , NORMALIZED 4 5 6 7 -25 0 , GATE TO SOURCE VOLTAGE (V) 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP708.SAM Typical Electrical Characteristics (continued) 1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 100 I D = 250µA 1.1 50 I S , REVERSE DRAIN CURRENT (A) V GS = 0 V BV DSS , NORMALIZED 10 TJ = 125°C 25°C - 55°C 1.05 2 1 1 0.95 0.1 0.9 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 5000 C i ss VGS , GATE-SOURCE VOLTAGE (V) 3000 2000 CAPACITANCE (pF) 15 I D = 60A V DS = 12V 24 64 1000 C o ss 10 500 C r ss f = 1 MHz V GS = 0 V 100 1 2 V DS 5 0 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 0 40 80 Q g , GATE CHARGE (nC) 120 160 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf VIN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP708.SAM Typical Electrical Characteristics (continued) 50 , TRANSCONDUCTANCE (SIEMENS) T J = -55°C 40 V GS = 1 0 V tp L + V DD - 2 5°C 1 25°C 30 t p is adjusted to reach the desired peak inductive current, I L . BV DSS 20 tp IL 10 VD S = 1 0V 0 0 10 20 30 40 ID , DRAIN CURRENT (A) 50 60 V DD g Figure 13. Transconductance Variation with Drain Current and Temperature. FS Figure 14. Unclamped Inductive Load Circuit and Waveforms. 300 200 100 I D, DRAIN CURRENT (A) S RD (O N) L im it 10 10 1m s 0µ µs s 20 10 5 2 1 0.5 1 2 3 10 10 ms 0m DC s V GS = 20V SINGLE PULSE T C = 25°C 5 10 20 30 VDS , DRAIN-SOURCE VOLTAGE (V)) 80 150 Figure 15. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0 .1 R θJC ( t) = r(t) * RθJC R JC = 1.0 °C/W θ 0.1 0 .05 P(pk) 0.05 0.03 0 .02 0 .01 t1 t2 0.02 S ingle Pulse TJ - T C = P * R θ JC (t) D uty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000 0.01 0.01 0.02 0.05 Figure 16. Transient Thermal Response Curve. NDP708.SAM