NDT2955_02

NDT2955 April 2002 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications. Features • –2.5 A, –60 V. RDS(ON) = 300mΩ @ VGS = –10 V RDS(ON) = 500mΩ @ VGS = –4.5 V • High density cell design for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package. Applications • • DC/DC converter Power management D D D D S D SOT-223 S G G D S SOT-223 * (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –60 ±20 (Note 1a) Units V V A W –2.5 –15 3.0 1.3 1.1 –55 to +150 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W Package Marking and Ordering Information Device Marking NDT2955 Device NDT2955 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation NDT2955 Rev. C NDT2955 Electrical Characteristics Symbol W DSS TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Test Conditions Single Pulse, VDD = 30 V, ID = 2.5 A ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to 25°C VDS = –60 V, VGS = –20 V, VGS = –20 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = –250 µA Min Typ Max Units 174 mJ Avalanche Ratings Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) –60 –60 –10 100 –100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, –2 –2.6 5.7 95 163 153 –4 V mV/°C ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –2.5 A VGS = –4.5 V, ID = –2 A VGS=–10 V, ID =–2.5 A, TJ=125°C VGS = –10 V, VDS = –5 V VDS = –10 V, ID = –2.5 A 300 500 513 mΩ ID(on) gFS –12 5.5 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –30 V, f = 1.0 MHz V GS = 0 V, 601 85 35 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –30 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 12 10 19 6 21 20 34 12 15 ns ns ns ns nC nC nC VDS = –30 V, VGS = –10 V ID = –2.5 A, 11 2.4 2.7 Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.5 A Voltage IF = –2.5 A, Diode Reverse Recovery Time diF/dt = 100 A/µs Diode Reverse Recovery Charge –2.5 (Note 2) A V nS nC –0.8 25 40 –1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 42°C/W when 2 mounted on a 1in pad of 2 oz copper b) 95°C/W when mounted on a .0066 2 in pad of 2 oz copper c) 110°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% NDT2955 Rev. C NDT2955 Typical Characteristics 12 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -7.0V 9 -6.0V -5.0V VGS=-4.5V 1.8 1.6 -5.0V 1.4 -6.0V 1.2 1 0.8 -7.0V -8.0V -10V -ID, DRAIN CURRENT (A) 6 -4.5V 3 -4.0V 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 3 6 -ID, DRAIN CURRENT (A) 9 12 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 0 .4 -50 ID = -2.5A VGS = -10V ID = -1.3A 0.3 0.25 TA = 125oC 0.2 0.15 TA = 25oC 0.1 0.05 -25 0 25 50 75 100 o 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 10 VDS = -10V TA = -55oC 25oC 125oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -ID, DRAIN CURRENT (A) 8 -IS, REVERSE DRAIN CURRENT (A) VGS =0V 1 TA = 1 25oC 0.1 25oC 0.01 -55oC 0.001 6 4 2 0 2.5 3.5 4.5 5.5 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDT2955 Rev. C NDT2955 Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) 800 ID = -2.5A 8 VDS = -20V -30V CAPACITANCE (pF) CISS 600 f = 1 MHz VGS = 0 V -40V 6 400 4 COSS 200 2 CRSS 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 0 15 30 45 60 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 -ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100ms 1s 10s DC 1ms 10ms 1 VGS = -10V SINGLE PULSE RθJA = 110oC/W TA = 25oC 0.01 0.1 1 10 100µs 40 SINGLE PULSE RθJA = 110°C/W TA = 25°C 30 20 0.1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 110 C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. NDT2955 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST â FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC â OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench â QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER â UHC™ SMART START™ UltraFET â SPM™ VCX™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5