NDT452AP

June 1996 NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control. Features -5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD Maximum Power Dissipation T A = 25°C unless otherwise noted NDT452AP -30 ±20 (Note 1a) Units V V A -5 - 15 (Note 1a) (Note 1b) (Note 1c) 3 1.3 1.1 -65 to 150 W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W * Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation NDT452AP Rev. B1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -24 V, VGS = 0 V TJ = 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = -250 µA TJ = 125°C Static Drain-Source On-Resistance VGS = -10 V, ID = -5.0 A TJ = 125°C VGS = -4.5 V, ID = -4.3 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current VGS = -10 V, VDS = -5 V VGS = -4.5 V, VDS = -5 V Forward Transconductance VDS = -10 V, ID = -5.0 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 690 430 160 pF pF pF -15 -5 7 S -1 -0.7 -1.6 -1.2 0.052 0.075 0.085 -30 -1 -10 100 -100 V µA µA nA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage -2.8 -2.2 0.065 0.13 0.1 A V Ω SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, ID = -5.0 A, VGS = -10 V VDD = -10 V, ID = -1 A, VGEN = -10 V, RGEN = 6 Ω 9 20 40 19 22 3.2 5.2 20 30 50 40 30 ns ns ns ns nC nC nC NDT452AP Rev. B1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD trr Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time VGS = 0 V, IS = -2.5 A (Note 2) -2.5 -0.85 -1.2 100 A V ns VGS = 0 V, IF = -2.5 A, dIF/dt = 100 A/µs PD (t ) = T J−TA R θJA(t ) = T J−TA R θJC+RθC (t ) A = I 2 (t ) × RDS(ON ) D TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT452AP Rev. B1 Typical Electrical Characteristics -20 3 VGS = - 10V ID , DRAIN-SOURCE CURRENT (A) - 5.0 - 4.5 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE - 6.0 -15 VGS = - 3.5V 2.5 - 4.0 - 4.5 - 5.0 - 4.0 -10 2 - 3.5 -5 1.5 - 6.0 - 10 - 3.0 1 0 0 -1 -2 -3 V DS , DRAIN-SOURCE VOLTAGE (V) -4 0.5 0 -4 -8 -12 I D , DRAIN CURRENT (A) -16 -20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 2 I D = -5.0A DRAIN-SOURCE ON-RESISTANCE 1.4 DRAIN-SOURCE ON-RESISTANCE V GS = -10V R DS(on), NORMALIZED V GS = -10V R DS(ON), NORMALIZED 1.5 1.2 TJ = 125°C 1 2 5°C 1 0.8 - 55°C 0.6 -50 0.5 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) J 125 150 0 -4 I D -8 -12 , DRAIN CURRENT (A) -16 -20 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. -20 GATE-SOURCE THRESHOLD VOLTAGE 1.2 V DS = -10V I D , DRAIN CURRENT (A) -15 T J = -55°C 125°C 25°C V th , NORMALIZED 1.1 V DS = VGS I D = -250µA 1 -10 0.9 0.8 -5 0.7 0 -1 -2 -3 -4 -5 VGS , GATE TO SOURCE VOLTAGE (V) -6 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDT452AP Rev. B1 Typical Electrical Characteristics 1.1 DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 20 I D = -250µA -I S , REVERSE DRAIN CURRENT (A) 10 5 V GS = 0V BV DSS , NORMALIZED 1 TJ = 125°C 25°C - 55°C 0.1 0.01 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 0.001 0 0.4 0.8 1.2 1.6 -VSD , BODY DIODE FORWARD VOLTAGE (V) 2 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 2000 10 ID = -5.0A , GATE-SOURCE VOLTAGE (V) 1000 CAPACITANCE (pF) 8 VDS = -5V -10V -20V C i ss 500 6 C o ss 300 200 4 f = 1 MHz V GS = 0 V C r ss 100 0.1 -V 0.2 0.5 1 2 5 10 30 0 0 5 10 15 Q g , GATE CHARGE (nC) 20 25 -V DS , DRAIN TO SOURCE VOLTAGE (V) GS 2 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. -VDD t d(on) ton t off tr 90% t d(off) 90% V IN D RL V OUT VOUT 10% tf VGS R GEN 10% 90% G DUT S V IN 10% 50% 50% PULSE WIDTH INVERTED Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDT452AP Rev. B1 Typical Thermal Characteristics 12 STEADY-STATE POWER DISSIPATION (W) 3.5 g FS TRANSCONDUCTANCE (SIEMENS) , VDS = -10V 9 TJ = -55°C 1a 3 2 5°C 2.5 1 25°C 6 2 1.5 1b 1c 3 1 4.5"x5" FR-4 Board TA = 2 5 C Still Air o 0 0 -4 -8 -12 I D , DRAIN CURRENT (A) -16 -20 0.5 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. SOT-223 Maximum Steady- tate Power Dissipation versus Copper Mounting Pad Area. 6 I D , STEADY-STATE DRAIN CURRENT (A) 50 20 1a 10 -I D , DRAIN CURRENT (A) 5 RD 5 S(O N) LIM IT 100 1m 10 10 ms s us s 4 1b 1c 4.5"x5" FR-4 Board TA = 2 5 o C Still Air VG S = - 1 0 V 1 0.5 0m 1s VGS = -10V 0.1 0.05 10s DC 3 SINGLE PULSE R θJ A = See Note 1c T A = 25°C 1 0.01 0.1 0.2 0.5 1 2 5 10 - V DS , DRAIN-SOURCE CURRENT (V) 30 50 2 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) Figure 15. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 1 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0 .5 0 .2 0 .1 0 .05 0 .02 0 .01 Figure 16. Maximum Safe Operating Area. 0.2 0.1 0.05 0.02 0.01 0.005 R JA ( t) = r(t) * R JA θ θ R JA = See Note 1 c θ P(pk) t1 t2 S ingle Pulse TJ - TA = P * R 0.002 0.001 0.0001 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 (t) θJA D uty Cycle, D = t 1 / t 2 100 300 Figure 17. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT452AP Rev. B1