NZT45H8

D45H8 / NZT45H8 Discrete POWER & Signal Technologies D45H8 NZT45H8 C B E C E C TO-220 SOT-223 B PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. Absolute Maximum Ratings* Symbol VCEO IC TJ, Tstg Collector-Emitter Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 60 8.0 -55 to +150 Units V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D45H8 60 480 2.1 62.5 Max *NZT45H8 1.5 12 83.3 Units W mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. © 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 PNP Power Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 100 mA, IB = 0 VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 60 10 100 V µA µA ON CHARACTERISTICS hFE VCE(sat ) VBE( sat) VBE( on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage I C = 2.0 A, VCE = 1.0 V I C = 4.0 A, VCE = 1.0 V I C = 8.0 A, IB = 0.4 A I C = 8.0 A, IB = 0.8 A I C = 10 mA, VCE = 2.0 V 0.54 60 40 1.0 1.5 0.65 V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 500 mA, VCE = 10 V, 40 MHz DC Typical Characteristics Typical Pulsed Current Gain vs Collector Current 200 180 125 °C Vce = 5V VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 1 β = 10 125 ºC 0.8 0.6 0.4 0.2 160 140 120 100 80 60 - 40 °C 25 °C 25 °C - 40 ºC 40 0.01 0.02 0.05 0.1 0.2 0.5 1 2 I C - COLLECTOR CURRENT (A) 5 10 0 0.1 1 I C - COLLECTOR CURRENT (A) PQ 10 15 D45H8 / NZT45H8 PNP Power Amplifier (continued) DC Typical Characteristics (continued) 1.6 1.4 1.2 1 β = 10 VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current VCE = 5V 1.4 1.2 1 - 40 ºC - 40 ºC 25 °C 0.8 0.6 0.4 0 .1 25 °C 125 ºC 0.8 0.6 0.4 0.1 125 ºC 1 I C - COLLECTOR CURRENT (A) 10 1 I C - COLLECTOR CURRENT (A) 10 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 V CB = 50V 10 1 0.1 0.01 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) P 5Q 150 AC Typical Characteristics Safe Operating Area TO-220 D45H8 / NZT45H8 PNP Power Amplifier (continued) AC Typical Characteristics (continued) Maximum Power Dissipation vs. Case Temperature Maximum Power Dissipation vs. Ambient Temperature POWER DISSIPATION vs AMBIENT TEMPERATURE PD - POWER DISSIPATION (W) 1.5 1.25 1 0.75 0.5 0.25 0 SOT-223 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Thermal Response in TO-220 Package