NZT7053

2N7052 / 2N7053 / NZT7053 Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C B TO-92 E C B E C TO-226 B SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 100 100 12 1.5 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N7052 625 5.0 83.3 200 Max 2N7053 1,000 8.0 125 50 *NZT7053 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ã 1997 Fairchild Semiconductor Corporation 2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current Emitter-Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 µ A, IE = 0 IE = 1.0 mA, IC = 0 VCB = 80 V, IE = 0 VCE = 80 V, IE = 0 VEB = 7.0 V, IC = 0 100 100 12 0.1 0.2 0.1 V V V µA µA µA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V IC = 1.0 A, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VBE = 5.0 V 10,000 1,000 20,000 1.5 2.0 V V SMALL SIGNAL CHARACTERISTICS FT Ccb Transition Frequency Collector-Base Capacitance IC = 100 mA, VCE = 5.0 V, VCB = 10 V,f = 1.0 MHz 2N7052 2N7053 200 10 8.0 MHz pF *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0% Typical Characteristics 100 80 60 40 20 0 0.001 125 °C V - COLLECTOR EMITTER VOLTAGE (V) CESAT h FE - TYPICAL PULSED CURRENT GAIN (K) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 2 β = 1000 1.6 1.2 - 40°C 25 °C - 40°C 0.8 0.4 0 10 25 °C 125 °C 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 100 I C - COLLECTOR CURRENT (mA) P 06 1000 2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor (continued) Typical Characteristics (continued) VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 2 β = 1000 - 40°C 25 °C 125 °C Base Emitter ON Voltage vs Collector Current 2 1.6 1.2 0.8 0.4 0 10 - 40°C 25 °C 125 °C 1.6 1.2 0.8 0.4 0 10 VCE= 5V 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) P 06 1000 Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) VCB = 80V 10 Junction Capacitance vs Reverse Bias Voltage JUNCTION CAPACITANCE (pF) 100 100 1 10 C ib 0.1 C cb 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) P 06 125 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Typical Collector-Emitter Leakage Current vs Temperature I CES - LEAKAGE CURRENT (nA) 1000 PD - POWER DISSIPATION (W) 1 Power Dissipation vs Ambient Temperature VCE = 80V V BE = 0 100 SOT-223 0.75 TO-92 TO-226 10 0 .5 1 0.25 0.1 0 40 80 120 160 TJ - JUNCTION TEMPERATURE ( º C) 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.