NZT753

NZT753 NZT753 PNP Current Driver Transistor • This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. 3 2 1 4 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value - 100 - 120 - 5.0 - 4.0 - 55 ~ +150 Units V V V A °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Conditions IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -100V, IE = 0 TA = 100°C VEB = -4V, IC = 0 VCE = -2.0V, IC = -50mA VCE = -2.0V, IC = -500mA VCE = -2.0V, IC = -1.0A IC = -1.0A, IC = -50mA IC = -1.0A, IB = -100mA VCE = -2.0V, IC = -1.0A, VCE = -5V, IC = -100mA, f = 100MHz 75 70 100 55 Min. -100 -120 -5.0 -0.1 -10 -0.1 Max. Units V V V µA µA µA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain On Characteristics * 300 -0.3 -1.25 -1.0 V V V MHz VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Small Signal Characteristics Transition Frequency fT *Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics * TA=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max. 1.2 9.7 103 Units W mW/°C °C/W * Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min 6cm2. ©2003 Fairchild Semiconductor Corporation Rev. A, April 2003 NZT753 Package Dimensions SOT-223 0.08MAX 3.00 ±0.10 MAX1.80 1.75 ±0.20 3.50 ±0.20 (0.60) 0.65 ±0.20 +0.04 0.06 –0.02 2.30 TYP (0.95) 4.60 ±0.25 0.70 ±0.10 (0.95) +0.10 0.25 –0.05 (0.60) 0°~ 10 ° 1.60 ±0.20 (0.46) (0.89) 6.50 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, April 2003 7.00 ±0.30 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2003 Fairchild Semiconductor Corporation Rev. I2