PN2222A

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A PN2222A MMBT2222A C PZT2222A C E C B E C B TO-92 E SOT-23 Mark: 1P B SOT-223 MMPQ2222 E2 B2 E3 B3 E4 B4 NMT2222 C2 E1 C1 E1 B1 SOIC-16 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 Mark: .1B B1 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 75 6.0 1.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  1997 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IC = 10 mA, IB = 0 IC = 10 µ A, IE = 0 IE = 10 µ A, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C VEB = 3.0 V, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V 40 75 6.0 10 0.01 10 10 20 V V V nA µA µA nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = -55°C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 35 100 50 40 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* 0.6 0.3 1.0 1.2 2.0 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo rb’CC NF Re(hie) Current Gain - Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance (except MMPQ2222 and NMT2222) IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 20 mA, VCB = 20 V, f = 31.8 MHz IC = 100 µ A, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz 300 8.0 25 150 4.0 60 MHz pF pF pS dB Ω SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time (except MMPQ2222 and NMT2222) VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 10 25 225 60 ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2222A 625 5.0 83.3 200 Max *PZT2222A 1,000 8.0 125 Units mW mW/°C °C/W °C/W Symbol PD RθJA Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die Max **MMBT2222A 350 2.8 357 MMPQ2222 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 125 °C 25 °C 400 300 200 25 °C 125 °C 0.2 100 - 40 °C 0.1 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRENT (mA) 500 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.8 - 40 °C 25 °C 0.6 0.6 125 °C 125 °C 0.4 0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 500 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C te 100 10 1 0.1 V CB = 40V f = 1 MHz 8 4 C ob 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( °C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = 320 V cc = 25 V Switching Times vs Collector Current 400 I B1 = I B2 = 320 V cc = 25 V Ic 10 Ic 10 TIME (nS) TIME (nS) 240 160 80 t on t off 240 160 80 0 10 tf td ts tr 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Test Circuits 30 V 200 Ω 16 V 1.0 KΩ 0 ≤ 200ns 500 Ω FIGURE 1: Saturated Turn-On Switching Time - 15 V 6.0 V 1k 37 Ω 30 V 1.0 KΩ 0 ≤ 200ns 50 Ω FIGURE 2: Saturated Turn-Off Switching Time TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E