PN2369
PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Ratings 15 40 4.5 200 -55 ~ 150 Units V V V mA °C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, VBE = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCB = 20V, IE = 0, Ta = 125°C IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 2.0V IC = 10mA, IB = 1.0mA IC = 10mA, IB = 1.0mA VCB = 5.0V, IE = 0, f = 1.0MHz VEB = 0.5V, IC = 0, f = 1.0MHz IC = 10mA, VCE = 10V, RG = 2.0kΩ, f = 100MHz IB1 = IB2 = IC = 10mA VCC = 3.0V, IC = 10mA, IB1 = 3.0mA VCC = 3.0V, IC = 10mA, IB1 = 3.0mA, IB2 = 1.5mA 5.0 0.7 40 20 Min. 15 40 40 4.5 0.4 30 120 0.25 0.85 4.0 5.0 V V pF pF Max. Units V V V V µA µA Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current
On Characteristics hFE VCE(sat) VBE(sat) Cobo Cibo hfe DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Input Capacitance Small -Signal Current Gain
Small Signal Characteristics
Switching Characteristics ts ton toff Storage Time Turn-On Time Turn-Off Time 13 12 18 ns ns ns
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
PN2369
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/°C °C/W °C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
PN2369
Package Dimensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation Rev. A, January 2004
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™
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Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™
SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11
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