PN2369A

PN2369A / MMBT2369A / MMPQ2369 Discrete POWER & Signal Technologies PN2369A MMBT2369A C MMPQ2369 B E B E B E B E E C BE TO-92 SOT-23 Mark: 1S B SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 40 4.5 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die PN2369A 350 2.8 125 357 Max MMBT2369A* 225 1.8 556 125 240 MMPQ2369 1,000 8.0 Units mW mW/ °C °C/W °C/W °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation PN2369A / MMBT2369A / MMPQ2369 NPN Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 10 mA, IB = 0 I C = 10 µ A, VBE = 0 I C = 10 µ A, IE = 0 I E = 10 µA, I C = 0 VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 125°C 15 40 40 4.5 0.4 30 V V V V µA µA ON CHARACTERISTICS hFE DC Current Gain* IC = 10 mA, VCE = 1.0 V IC = 10 mA,VCE = 0.35 V,TA = - 55° C IC = 100 mA, VCE = 2.0 V IC = 10 mA, IB = 1.0 mA IC = 10 mA, I B = 1.0 mA,T A = 125°C IC = 30 mA, IB = 3.0 mA IC = 100 mA, IB = 10 mA IC = 10 mA, IB = 1.0 mA IC = 10 mA, I B = 1.0 mA,T A = - 55° C IC = 10 mA, I B = 1.0 mA,T A = 125°C IC = 30 mA, IB = 3.0 mA IC = 100 mA, IB = 10 mA 40 20 20 120 VCE(sat ) Collector-Emitter Saturation Voltage* VBE( sat) Base-Emitter Saturation Voltage 0.7 0.59 0.2 0.3 0.25 0.5 0.85 1.02 1.15 1.6 V V V V V V V V V SMALL SIGNAL CHARACTERISTICS Cobo Cibo hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz I C = 10 mA, VCE = 10 V, RG = 2.0 kΩ, f = 100 MHz 5.0 4.0 5.0 pF pF SWITCHING CHARACTERISTICS (except MMPQ2369) ts ton toff Storage Time Turn-On Time Turn-Off Time I B1 = IB2 = IC = 10 mA VCC = 3.0 V, IC = 10 mA, I B1 = 3.0 mA VCC = 3.0 V, IC = 10 mA, I B1 = 3.0 mA, I B2 = 1.5 mA 13 12 18 ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2 Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p Itf=.3 Vtf=4 Xtf=4 Rb=10) PN2369A / MMBT2369A / MMPQ2369 NPN Switching Transistor (continued) DC Typical Characteristics 200 h FE - DC CURRENT GAIN VCESAT- COLLECTOR-EMITTER VOLTAGE (V) DC Current Gain vs Collector Current V CE = 1V 150 125 °C Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 0.2 25 °C β = 10 100 25 °C 125 °C 50 - 40 ºC 0.1 0 0.1 - 40 ºC 0.01 IC 0.1 1 10 - COLLECTOR CURRENT (mA) 100 1 10 100 I C - COLLECTOR CURRENT (mA) P 21 500 VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.4 1.2 1 0.8 0.6 0.4 0.1 IC 1 10 100 - COLLECTOR CURRENT (mA) P 21 Base-Emitter ON Voltage vs Collector Current 1 β = 10 0.8 - 40 ºC 25 °C - 40 ºC 0.6 125 °C 25 °C 125 °C 0.4 V CE = 1V 300 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 21 100 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 600 V CB = 20V 100 10 1 25 50 75 100 125 T A - AMBIENT TEMP ERATURE (ºC) 150 PN2369A / MMBT2369A / MMPQ2369 NPN Switching Transistor (continued) AC Typical Characteristics Output Capacitances vs. Reverse Bias Voltage Switching Times vs. Collector Current Switching Times vs. Ambient Temperature Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents PN2369A / MMBT2369A / MMPQ2369 NPN Switching Transistor (continued) AC Typical Characteristics (continued) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents Delay Time vs. Base-Emitter OFF Voltage and Turn On Base Current Rise Time vs. Turn On Base Current and Collector Current PN2369A / MMBT2369A / MMPQ2369 NPN Switching Transistor (continued) AC Typical Characteristics (continued) POWER DISSIPATION vs AMBIENT TEMPERATURE 1 P - POWER DISSIPATION (W) D 0.75 SOT-223 0.5 TO-92 0.25 SOT-23 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Test Circuits 'A' 0 VIN - 10 56 Ω Pulse generator VIN Rise Time < 1 ns Source Impedance = 50Ω PW ≥ 300 ns Duty Cycle < 2% 0.0023µ F 890 Ω 500 Ω 0.1 µF +6V 1 KΩ 0 - 4V VOUT 10% Pulse waveform at point ' A' VIN 0.1 µF 500 Ω 91 Ω 10% ts VOUT 0.0023µ F + 11 V 10 µF 10 µF + 10 V FIGURE 1: Charge Storage Time Measurement Circuit VOUT 0 VIN 10% 220 Ω VIN 0 10% VOUT 90% t on ton V BB = - 3.0 V V IN = + 15.25 V VIN 3.3 KΩ 50 Ω 0.0023µF 3.3 KΩ 50 Ω VOUT toff 90% toff VBB = 12 V VIN = - 20.9 V 0.05 µ F 0.05 µ F 0.0023µ F Pulse generator VIN Rise Time < 1 ns Source Impedance = 50Ω PW ≥ 300 ns Duty Cycle < 2% To sampling oscilloscope input impedance = 50Ω Rise Time ≤ 1 ns VBB 0.1 µ F 0.1 µ F VCC = 3.0 V FIGURE 2: tON, tOFF Measurement Circuit