PN3643

PN3643 PN3643 NPN General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 60 5.0 500 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = 65°C VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA IC = 150mA, IB = 15mA VCB = 10V, f = 140KHz VCE = 15V, f = 30MHz RG = 140Ω, RL = 260Ω VCE = 15V, f = 30MHz RG = 140Ω, RL = 260Ω IC = 50mA, VCE = 5.0V, f = 100MHz 60 10 2.5 100 20 Min. 30 60 5.0 50 1.0 300 0.22 8.0 V pF % dB Max. Units V V V nA µA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * V(BR)CBO V(BR)EBO ICES Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current On Characteristics hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage Small Signal Characteristics Cob Output Capacitance η Gpe hfe Collector Efficientcy Amplifier Power Gain Small Signal Current Gain * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN3643 Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN3643 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1