PN3646

PN3646 PN3646 NPN Switching Transistor • Sourced from process 22. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continued Operating and Storage Junction Temperature Range Value 15 40 5.0 300 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CES BV(BR)CBO BV(BR)EBO ICES Parameter Test Condition IC = 10mA, IB = 0 IC = 100µA, VBE = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCE = 20V, VBE = 0 VCE = 20V, VBE = 0, Ta = 65°C VCE = 0.4V, IC = 30mA VCE = 0.5V, IC = 100mA VCE = 1.0V, IC = 300mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA VCB = 5.0V, IE = 0, f = 1MHz VCB = 5.0V, IC = 0, f = 1MHz IC = 300mA, VCE = 10V, f = 100MHz 3.5 0.73 30 25 15 Min. 15 40 40 5.0 0.5 3.0 120 Max. Units V V V V µA µA Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics * hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage 0.2 0.28 0.5 0.95 1.2 1.7 5.0 8.0 V V V V V V pF pF VBE(sat) Base-Emitter Saturation Voltage Small Signal Characteristics Ccb Ceb hfe Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 PN3646 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Switching Characteristics ts ton toff Storage Time Turn-On Time Turn-Off Time (Continued) Test Condition IC = 300mA, VCC = 10V IB1 = IB2 = 30mA Min. Max. 20 18 28 Units ns ns ns Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/°C °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 PN3646 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, October 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I13