PN4141

PN4141 PN4141 NPN General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 60 5.0 500 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 40V, VOB = 3.0V VCB = 40V, VOB = 3.0V VCE = 10V, IC = 100µA VCE = 10V, IC = 1.0mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA VCE = 1.0V, IC = 150mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 100KHz IC = 20mA, VCE = 20V, f = 100MHz VCC = 30V, IC = 150mA IB1 = 15mA, VOB(off) = 0.5V VCC = 30V, IC = 150mA IB1 = IB2 = 15mA 2.5 10 40 250 ns ns ns ns 35 50 75 100 30 50 Min. 30 60 5.0 50 50 Max. Units V V V nA nA Off Characteristics Collector-Emitter Breakdown Voltage * V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cutoff Current On Characteristics DC Current Gain hFE 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.4 1.6 1.3 2.6 8.0 V V V V pF Small Signal Characteristics Output Capacitance Cob hfe td tr ts Small Signal Current Gain Delay Time Rise Time Storage Time Switching Characteristics tf Fall Time 2.5 60 * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4141 Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4141 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1