PN918

PN918 / MMBT918 Discrete POWER & Signal Technologies PN918 MMBT918 C E C B TO-92 E SOT-23 Mark: 3B B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 30 3.0 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN918 350 2.8 125 357 Max *MMBT918 225 1.8 556 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fairchild Semiconductor Corporation PN918 / MMBT918 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS VCEO(sus) V(BR)CBO V(BR)EBO ICBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 3.0 mA, IB = 0 I C = 1.0 µ A, I E = 0 I E = 10 µA, I C = 0 VCB = 15 V, IE = 0 VCB = 15 V, TA = 150° C 15 30 3.0 0.01 1.0 V V V µA µA ON CHARACTERISTICS hFE VCE(sat ) VBE( sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage I C = 3.0 mA, VCE = 1.0 V I C = 10 mA, IB = 1.0 mA I C = 10 mA, IB = 1.0 mA 20 0.4 1.0 V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 4.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VCB = 0, I E = 0, f = 1.0 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz IC = 1.0 mA, VCE = 6.0 V, RG = 400Ω, f = 60 MHz 600 1.7 3.0 2.0 6.0 MHz pF pF pF dB FUNCTIONAL TEST Gpe PO η Amplifier Power Gain Power Output Collector Efficiency VCB = 12 V, IC = 6.0 mA, f = 200 MHz VCB = 15 V, IC = 8.0 mA, f = 500 MHz VCB = 15 V, IC = 8.0 mA, f = 500 MHz 15 30 25 dB mW % *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% PN918 / MMBT918 NPN RF Transistor (continued) DC Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 100 90 80 70 60 50 40 30 20 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) P 43 - 40 °C 25 °C Vce = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 125 °C β = 10 125 °C 0.15 0.1 0.05 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 43 25 °C - 40 °C 50 30 VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current β = 10 Base-Emitter ON Voltage vs Collector Current 1 0.9 0.8 0.7 0.6 125 °C 25 °C 1 - 40 °C VCE = 5V - 40 °C 0.8 25 °C 0.6 125 °C 0.5 0.4 0.3 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 43 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 30 20 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 5 VCB = 20V 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( ° C) 150 PN918 / MMBT918 NPN RF Transistor (continued) AC Typical Characteristics Input and Output Capacitance vs Reverse Voltage 100 f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 140 120 100 80 60 40 20 0 1 10 P 43 20 50 100 200 f = 1.0 MHz CAPACITANCE (pF) Vce = 5V 10 1 Cob Cib 0.1 0.1 1 10 100 Vce - COLLECTOR VOLTAGE(V) I C- COLLECTOR CURRENT (mA) Contours of Constant Gain Bandwidth Product (fT) Contours of Constant Noise Figure Small Signal Current Gain vs. Collector Current 350 300 250 200 150 100 50 0 0 POWER DISSIPATION vs AMBIENT TEMPERATURE PD - POWER DISSIPATION (mW) TO-92 SOT-23 25 50 75 100 TEMPERATURE ( ° C) 125 150 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Input Admittance vs. Collector Current-Output Short Circuit Input Admittance vs. Collector Current-Output Short Circuit Input Admittance vs. Frequency-Output Short Circuit Forward Transfer Admittance vs. Frequency-Output Open Circuit Forward Transfer Admittance vs. Collector Current-Output Short Circuit Forward Transfer Admittance vs. Collector Current-Output Short Circuit PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Reverse Transfer Admittance vs. Collector Current-Input Short Circuit (continued) Reverse Transfer Admittance vs. Collector Current-Input Short Circuit Reverse Transfer Admittance vs. Frequency-Input Short Circuit Output Admittance vs. Collector Current-Input Short Circuit Output Admittance vs. Collector Current-Input Short Circuit Output Admittance vs. Frequency-Input Short Circuit PN918 / MMBT918 NPN RF Transistor (continued) Test Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output into 50Ω RFC (NOTE 1) NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF 1000 pF 2.2 KΩ RFC - VCC VCC FIGURE 1: 500 MHz Oscillator Circuit