QVE00034

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 PACKAGE DIMENSIONS 0.697 (17.70) + 0.236 (6.00) E D + C L C L 0.020 (0.50) 0.315 (8.00) C L 0.039 X 45° CHAMFER (2X) OPTICAL C.L. 0.059 (1.50) (2X) 0.295 (7.50) 0.394 (10.00) 0.079 (2.00) 0.138 (3.51) 0.030 (0.76) 0.197 (5.00) PINS 0.020 (0.51) (4X) SQ. (TYP) 0.543 [13.79] C L 0.333 (8.46) 2 1 0.100 (2.54) (2X) (TYP) 0.093 (2.36) PIN #1 (ANODE) PIN #2 (CATHODE) PIN #3 (COLLECTOR) PIN #4 (EMITTER) 3 4 SCHEMATIC 1 4 NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 2 3 DESCRIPTION The QVE00034 is a slotted optical switch designed for multipurpose non-contact sensing. It consists of a GaAs LED and a silicon photo-transistor packaged into an injection molded housing and facing each other across a 0.315" (8.0 mm) gap. The housing is featuring locating knobs for accurate mounting. FEATURES • No contact switching • 8mm wide slot • 0.5 mm aperture width • Opaque black plastic housing • Locating knobs on housing base for accurate mounting • Transistor Output © 2003 Fairchild Semiconductor Corporation Page 1 of 5 4/14/03 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature Soldering Temperature EMITTER Continuous Forward Current Reverse Voltage Power Dissipation(1) IF VR PD VCEO VECO IC PD 50 6 100 mA V mW (Iron)(2,3,4) (Flow)(2,3) Symbol TOPR TSTG TSOL-I TSOL-F Rating -55 to +100 -55 to +100 240 for 5 sec 260 for 10 sec Units °C °C °C °C SENSOR Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1) 30 4.5 20 150 V V mA mW NOTES 1. Derate power dissipation linearly 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16" (1.6mm) from housing. ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER EMITTER Forward Voltage Reverse Current Peak Emission Wavelength SENSOR Dark Current COUPLED Collector Current Collector Emitter Saturation Voltage Rise Time Fall Time IF = 20 mA, VCE = 10 V IF = 20 mA, IC = 0.1 mA TA = -40°C to +85°C VCC = 5 V, RL = 100 Ω IC = 5 µA IC(ON) VCE (SAT) tr tf 0.5 — — — — — 4 4 14 0.4 — — mA V µs VCE = 10 V, IF = 0 mA VCE = 2.5 V, IF = 0 mA, TA = -40°C to +85°C ID — — — — 200 3 nA µA IF = 20 mA VR = 4 V IF = 20 mA VF IR λPE — — — 1.2 — 940 1.5 10 — V µA nm TEST CONDITIONS SYMBOL MIN TYP MAX UNITS © 2003 Fairchild Semiconductor Corporation Page 2 of 5 4/14/03 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 TYPICAL PERFORMANCE CURVES Fig. 1 Collector Current vs. Shield Distance Fig. 2 Collector Current vs. Shield Distance 1.0 Ic(on) -Normalized Collector Current 0.8 Normalized to value with shield removed Ic(on) -Normalized Collector Current TA=25°C IF=20mA V CE=5V 1.0 0.8 TA=25°C IF=20mA V CE=5V Normalized to value with shield removed 0.6 0.6 Black Shield 0.4 + E D + 0.4 Black Shield d1 0 0.2 d2 0 0.2 0.0 0 1 2 3 4 5 6 0.0 0 2 4 6 8 d2-Shield Distance(mm) d1-Shield Distance(mm) Fig. 3 Collector-Emitter Voltage vs. Collector Current 5 4.5 4 3.5 IF = 30 mA 1.9 Fig. 4 Collector-Emitter Voltage vs. Temperature TA = 25˚C IF = 40 mA IF = 20 mA, IC = 0.1 mA 1.4 IF = 10 mA, IC = 0.05 mA VCE NORMALIZED 1.2 1 ICE (mA) 3 2.5 2 1.5 1 IF = 10 mA IF = 20 mA 0.8 IF = 30 mA, IC = 0.15 mA 0.6 0.4 0.2 Normalized to IF = 20 mA, IC = 0.1 mA, TA = 25˚C 0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 -50 -25 0 25 50 75 100 VCE (V) TEMP(C) © 2003 Fairchild Semiconductor Corporation Page 3 of 5 4/14/03 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 Fig. 5 Collector Current vs. Temperature 5 4.5 Normalized to IF = 20 mA, VCE = 5 V, TA = 25˚C 4 IF = 100 mA Fig. 6 Collector Current vs. Forward Current 3 2.5 IF = 60 mA ICE NORMALIZED 3.5 3 2.5 2 1.5 1 ICE NORMALIZED 2 1.5 TA = 25˚C VCE = 10 V Normalized to IF = 20 mA IF = 30 mA IF = 20 mA IF = 10 mA 1 0.5 0.5 0 -55 -40 -20 0 20 40 IF = 5 mA 0 60 80 100 0 5 10 15 20 25 30 35 40 45 50 55 Temp(C) IF (mA) Fig. 7 Rise Time vs. Load Resistance 1.1 1.05 1 TA = 25˚C PW = 300 µs PRR = 100 µs VCC = 5 V Normalized to RL = 2k Ω 4.5 4.25 4 3.75 3.5 3.25 3 2.75 2.5 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 1 2 Fig. 8 Fall Time vs. Load Resistance T(off) NORMALIZED 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 1 2 3 4 5 T(on) T(off) NORMALIZED T(off) TA = 25˚C PW = 300 µs PRR = 100 µs VCC = 5 V Normalized to RL = 2k Ω 6 7 8 9 10 3 4 5 6 7 8 9 10 RL(kΩ) RL(kΩ) Fig. 9 Forward Voltage vs. Forward Current 55 50 45 40 35 TA = 25˚C TA = 70˚C TA = 30˚C IF (mA) 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VF(V) © 2003 Fairchild Semiconductor Corporation Page 4 of 5 4/14/03 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. © 2003 Fairchild Semiconductor Corporation Page 5 of 5 4/14/03