RGF1A-RGF1M
RGF1A - RGF1M
Features • • • • • •
Glass passivated junction. For surface mounted application. Low forward voltage drop. High current capability. Easy pick and place. High surge current capability.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM
TA = 25°C unless otherwise noted
Parameter
1A Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TL = 125°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 50 1B 100 1D 200
Value
1G 400 1.0 1J 600 1K 800 1M 1000
Units
V A
30 -65 to +175 -65 to +175
A °C °C
Tstg TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RθJA RθJL
Parameter
Power Dissipation Thermal Resistance, Junction to Ambient* Thermal Resistance, Junction to Lead*
Value
1.76 85 28
Units
W °C/W °C/W
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
VF trr IR
TA = 25°C unless otherwise noted
Parameter
1A Forward Voltage @ 1.0 A Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 125°C Total Capacitance VR = 4.0 V, f = 1.0 MHz 150 1B 1D
Device
1G 1.3 250 5.0 100 8.5 500 1J 1K 1M
Units
V ns µA µA pF
CT
2001 Fairchild Semiconductor Corporation
RGF1A-RGF1M, Rev. G
RGF1A-RGF1M
Fast Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, IF [A]
1.25
Peak Forward Surge Current, IFSM [A]
50
1
40
0.75
RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS
30
0.5
20
0.25
10
0
0
25
50 75 100 125 Ambient Temperature [ºC]
150
175
0
1
2
5 10 20 Number of Cycles at 60Hz
50
100
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
20 10 Forward Current, IF [A] Reverse Current, IR [mA]
30 10
T A = 150 º C T A = 125 º C
1
1
T A = 100 º C
T A = 2 5º C
0.1
Pulse Width = 300µs 2% Duty Cycle
0.1
TA = 2 5º C
0.01 0.4
0.6
0.8 1 1.2 1.4 Forward Voltage, VF [V]
1.6
1.8
0.01
0
20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
50 Total Capacitance, CT [pF]
20 10 5
2 1
1
2
5 10 20 Reverse Voltage, VR [V]
50
100
Figure 5. Total Capacitance
2001 Fairchild Semiconductor Corporation
RGF1A-RGF1M, Rev. G
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™
DISCLAIMER
FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™
OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ®
SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ®
VCX™
STAR*POWER is used under license
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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