RGP10A-RGP10M
Discrete POWER & Signal Technologies
RGP10A - RGP10M
Features • • • • •
1.0 ampere operation at TA = 55°C with no thermal runaway. High temperature metallurgically bonded construction. Glass passivated cavity-free junction. Typical IR less than 1µA. Fast switching for high efficiency.
1.0 min (25.4)
Dimensions in inches (mm)
0.205 (5.21) 0.160 (4.06)
DO-41
COLOR BAND DENOTES CATHODE
0.107 (2.72) 0.080 (2.03) 0.034 (0.86) 0.028 (0.71)
1.0 Ampere Glass Passivated Fast Recovery Rectifiers
Absolute Maximum Ratings*
Symbol
IO if(surge) PD RθJA Tstg TJ
TA = 25°C unless otherwise noted
Parameter
Average Rectified Current .375 " lead length @ TL = 55°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Storage Temperature Range Operating Junction Temperature
Value
1.0
Units
A
30 2.5 17 50 -65 to +175 -65 to +175
A W mW/°C °C/W °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
10A Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25°C TA = 150°C Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum Forward Voltage @ 1.0 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 50 35 50
TA = 25°C unless otherwise noted
Device
10B 100 70 100 10D 200 140 200 10G 400 280 400 5.0 200 150 1.3 15 250 500 10J 600 420 600 10K 800 560 800 10M 1000 700 1000
Units
V V V µA µA nS V pF
©1999 Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. A
RGP10A-RGP10M
Typical Characteristics
Forward Current Derating Curve
1 FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) 30 25 20 15 10 5 0
Non-Repetitive Surge Current
0.75
0.5 SINGLE PHASE
HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS
0.25
0 25
50
75 100 125 150 LEAD TEMPERATURE ( º C)
175
1
2
5 10 20 50 NUMBER OF CYCLES AT 60Hz
100
Forward Characteristics
10
Reverse Characteristics
10 REVERSE CURRENT ( µ A)
TA = 125 º C
FORWARD CURRENT (A)
1
1
TA = 75 º C
0.1
TA = 2 5º C Pulse Width = 300µs 2% Duty Cycle
0.1
TA = 25º C
0.01 0.4
0.6
0.8 1 1.2 1.4 FORWARD VOLTAGE (V)
1.6
0.01
0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Junction Capacitance
100 50 CAPACITANCE (pF)
20 10 5
2 1
1
2
5 10 20 REVERSE VOLTAGE (V)
50
100
50 Ω NONINDUCTIVE
50 Ω NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V (approx)
50 Ω NONINDUCTIVE
Pulse Generator (Note 2) (+)
OSCILLOSCOPE (Note 1)
0 -0.25A
-1.0A
1.0cm SET TIME BASE FOR 5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
RPG10A - RPG10M, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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