RMPA2458

RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Preliminary September 2005 RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Features ■ ■ ■ ■ ■ ■ ■ ■ ■ 31.5dB small signal gain 27dBm output power @ 1dB compression 103mA total current at 19dBm modulated power out 2.5% EVM at 19 dBm modulated power out 3.3V collector supply operation 2.9V mirror supply operation Power saving shutdown options (bias control) Integrated power detector with 20dB dynamic range Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package General Description The RMPA2458 power amplifier is designed for high performance WLAN applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA’s industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. ■ Internally matched to 50 Ohms and DC blocked RF input/ output ■ Optimized for use in 802.11b/g applications Device Electrical Characteristics1 802.11g OFDM Modulation (176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current @ 19dBm POUT EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold3 Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, TA = 25°C, PA is constantly biased, 50Ω system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold. Min 2.4 3.0 Typ 3.3 2.9 3.3 31.5 103 2.5 340 5 Max 2.5 3.6 Units GHz V V mA dB mA % mV dBm ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com RMPA2458 Rev. E RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Electrical Characteristics1 802.11b CCK Modulation (RF not framed) 11 Mbps Data Rate 22.0 MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current @ 19dBm Pout First Side Lobe Power @ 19dBm Pout Second Side Lobe Power @ 19dBm Pout Max Pout Spectral Mask Compliance2 Detector Output @ 19dBm Pout Detector Pout Threshold3 Min 2.4 3.0 Typ 3.3 2.9 3.3 32 130 -36 -60 24 1.15 5 Max 2.5 3.6 Units GHz V V mA dB mA dBm dBm dBm V dBm Electrical Characteristics1 Single Tone Parameter Frequency Collector Supply Voltage Mirror Supply Voltage (VM123) Gain Total Quiescent Current Bias Current at pin VM1234 P1dB Compression Current @ P1dB Compression Shutdown Current (VM123 = 0V) Input Return Loss Output Return Loss Detector Output at P1dB Compression Detector Pout Threshold3 Turn-on Time5 Spurious (Stability)6 Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9 Volts, Ta = 25°C, PA is constantly biased, 50Ω system. 2. PIN is adjusted to point where performance approaches spectral mask requirements. 3. POUT measured at PIN corresponding to power detection threshold. 4. Mirror bias current is included in the total quiescent current. 5. Measured from Device On signal turn on to the point where RF POUT stabilizes to 0.5dB. 6. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. Min 2.4 3.0 2.6 Typ 3.3 2.9 31.5 49 3.2 27 600