RMPA2550

RMPA2550 August 2004 RMPA2550 2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier General Description The RMPA2550 is a dual frequency band power amplifier designed for high performance WLAN applications in the 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The single low profile 20 pin 3 x 4 x 0.9 mm package with internal matching on both input and output to 50 Ω minimizes next level PCB space and allows for simplified integration. The two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. • 27 dB modulated gain 5.15 to 5.85 GHz band • 26 dBm output power @ 1 dB compression both frequency bands • 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz • 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz • 3.3 V single positive supply operation • Adjustable bias current operation • Two power saving shutdown options (bias and logic control) • Separate integrated power detectors with 20 dB dynamic range • Low profile 20 pin, 3 x 4 x 0.9 mm standard Device QFN leadless package • Internally matched to 50 ohms • Optimized for use in 802.11a/b/g applications Features • Dual band operation in a single package design • 26 dB modulated gain 2.4 to 2.5 GHz band Electrical Characteristics1,3 802.11g/a OFDM Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Supply Voltage Gain Total Current @ 18dBm POUT Total Current @ 19dBm POUT EVM @ 18dBm POUT2 EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold4 POUT Spectral Mask Compliance5,7 Minimum 2.4 3.0 24.5 Typical 3.3 26 150 157 2.0 3.0 508 5.0 21.0 Maximum 2.5 3.6 28 182 189 2.5 3.5 600 7.0 Minimum 5.15 3.0 25.5 Typical 3.3 27 228 235 2.5 3.5 780 5.0 21.0 Maximum 5.85 3.6 29 260 267 3.5 4.5 865 7.0 Unit GHz V dB mA mA % % mV dBm dBm Electrical Characteristics3,6 802.11b CCK Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth Parameter Frequency Supply Voltage Gain Total Current First Sidelobe Power Second Sidelobe Power Max POUT Spectral Mask Compliance7 Minimum 2.4 3.0 24.5 Typical 3.3 26 250 Maximum 2.5 3.6 28 -40 -55 24.0 Unit GHz V dB mA dBc dBc dBm Notes: 1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50Ω system. VL adjusted for either 2.4 or 5 GHz operation. 2: Percentage includes system noise floor of EVM=0.8%. 3: Not measured 100% in production. 4: POUT measured at PIN corresponding to power detection threshold. 5: Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, POUT =+23 dBm, 50Ω system. Satisfies spectral mask. 7: PIN is adjusted to point where performance approaches spectral mask requirements. ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D RMPA2550 Electrical Characteristics1 Single Tone Parameter Frequency Supply Voltage Gain2 Total Quiescent Current2 Bias Current at pin VM3 P1dB Compression2 Current @ P1dB Comp2 Standby Current4 Shutdown Current (VM=0V) Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold9 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control Pin: Device Off Device On Logic Current Turn-on Time5 Turn-off Time Spurious (Stability)6 Minimum 2.4 3.0 24 70 25 Typical 3.3 26 120 13.5 26 350 0.5