RMPA29200

RMPA29200 June 2004 RMPA29200 29–31 GHZ 2 Watt Power Amplifier MMIC General Description The Fairchild Semiconductor’s RMPA29200 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA29200 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. Features • 17dB small signal gain (typ.) • 33dBm saturated power out (typ.) • DC Bias connections on top or bottom side • Circuit contains individual source vias • Chip size 4.00mm x 2.98mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+5V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 +8 2450 +22 -30 to +85 -55 to +125 5.6 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D RMPA29200 Electrical Characteristics (At 25°C), 50Ω system, Vd = +5V, Quiescent current (Idq) = 1500mA Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal (Pin = 0dBm) Gain Variation vs. Frequency Power Output at 1dBm Compression Power Output Saturated: (Pin = +19dBm) Drain Current at Pin = 0dBm Drain Current at P1dB Compression Power Added Efficiency (PAE): at P1dB OIP3 (26dBm/Tone) Input Return Loss (Pin = 0dBm) Output Return Loss (Pin = 0dBm) Note: 1. Typical range of negative gate voltages is -1.0 to 0.0V to set typical Idq of 1500 mA. Min 29 14.5 Typ -0.2 17 ±0.5 32.5 33 1500 1780 20 38 12 10 Max 31 32 Units GHz V dB dB dBm dBm mA mA % dBm dB dB ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D RMPA29200 Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2mil gap between the chip and the substrate material. GATE SUPPLY (Vg) MMIC CHIP RF IN RF OUT GROUND (Back of the Chip) DRAIN SUPPLY (Vd) Figure 1. Functional Block Diagram 2.997 2.812 2.714 1.692 1.492 1.292 0.270 0.172 0.0 0.0 0.454 1.422 2.513 3.891 4.000 Dimensions in mm Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 4.000mm x 2.997mm x 50µm. Back of chip is RF and DC Ground) ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D RMPA29200 GATE SUPPLY (-Vg) 0.1µF 100pF BOND WIRE Ls MMIC CHIP RF IN RF OUT 100pF GROUND (Back of Chip) 0.01µF 100pF 100pF BOND WIRE Ls 0.01µF 0.01µF DRAIN SUPPLY (Vd = +5V) Figure 3. Recommended Application Schematic and Circuit Diagram ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D RMPA29200 DIE-ATTACH 80Au/20Sn 2 MIL GAP 5 MIL THICK ALUMINA 50Ω 5 MIL THICK ALUMINA 50Ω RF INPUT RF OUTPUT 100pF 100pF 100pF 100pF L < 0.015" (4 Places) 0.01µF 0.01µF 0.01µF 0.01µF Vg (NEGATIVE) Vd (POSITIVE) MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side. Note: Use 0.003" by 0.0005" gold ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Figure 4. Recommended Assembly and Bonding Diagram ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D RMPA29200 Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier. Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +5V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 1500mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D RMPA29200 Typical Characteristics 25 20 15 S21, S11, S22 (dB) 10 5 0 -5 S11 S22 RMPA29200 S21, S22 Mag vs. Frequency Bias Vd = 5V, Idq = 1500mA, T = 25°C S21 0 5 0 20 22 24 26 28 30 32 34 36 FREQUENCY (GHz) 34 RMPA29200 P1dB vs. Frequency vs. Temperature Vd = 5V, Idq = 1500mA -30°C 33 32 P1dB (dBm) +25°C +85°C 31 30 29 28 26 27 28 29 FREQUENCY (GHz) 30 31 32 RMPA29200 Power Out vs. Power In Vd = 5V, Idq = 1500mA, T = 25°C 36 34 32 POWER OUT (dBm) 30 28 26 24 22 20 18 -2 0 2 4 6 8 10 12 14 16 18 POWER IN (dBm) ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D 29 GHz 30 GHz 31 GHz 28 GHz RMPA29200 Typical Characteristics (Continued) RMPA29200 Gain vs. Power In Vd = 5V, Idq = 1500mA, T = 25°C 21 20 19 GAIN (dB) 18 17 16 15 14 -2 0 2 31 GHz 30 GHz 29 GHz 28 GHz 4 6 8 10 12 14 16 18 POWER IN (dBm) 42 40 RMPA29200 Two-Tone OIP3 vs. Output Power/Tone Vd = 5V, Idq = 1500mA, T = 25°C 30 GHz 29 GHz 38 OIP3L (dBm) 36 34 32 30 28 31 GHz 10 12 14 16 18 20 22 24 26 28 30 OUTPUT POWER/TONE (dBm) RMPA29200 in Balance Pair Configuation with MMIC Driver RMDA29000 POWER AMP (2) RMDA29000 DRIVER AMP RF IN 2.4mm RF OUT WG ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D RMPA29200 Typical Characteristics (Continued) RMPA29200 Balanced Pair with RMDA29000 Driver Power Out vs. Power In T = 25°C 38 28 GHz 36 34 POWER OUT (dBm) 32 30 28 26 24 22 20 -16 -14 -12 -10 -8 -6 -4 -2 0 2 29 GHz 30 GHz 29 GHz 31 GHz Vd = 5V RMPA29200 Idq = 1560mA RMDA29000 Idq = 250mA 4 6 POWER IN (dBm) RMPA29200 Balanced Pair with RMDA29000 Drive Amp P1dB vs. Frequency T = 25°C 35 34.5 34 P1dB (dB) 33.5 33 32.5 32 31.5 26 27 28 29 FREQUENCY (GHz) 30 31 32 Vd = 5V RMPA29200 Idq = 1560mA RMDA29000 Idq = 250mA RMPA29200 Balanced Pair with RMDA29000 Driver Amp OIP3 vs. Pout F = 29GHz. T = 25°C 41 40 OIP3 (dBm) 39 OIP3U OIP3L 38 37 Vd = 5V RMPA29200 Idq = 1560mA RMDA29000 Idq = 250mA 36 28 29 30 31 32 33 34 35 POWER OUT (dBm) ©2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11