RMPA5251

RMPA5251 October 2004 RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier General Description The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50Ω minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. • 2.5% EVM at 18.0dBm modulated power out • 3.3V single positive supply operation • Adjustable bias current operation • Two power saving shutdown options (bias and logic control) • Integrated power detector with >18dB dynamic range • Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless package • Internally matched to 50Ω • Minimal external components • Optimized for use in IEEE 802.11a WLAN applications Device Features • 4.9 to 5.85 GHz Operation • 27dB small signal gain • 26dBm output power @ 1dB compression Electrical Characteristics1,3 802.11a OFDM Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency10 Supply Voltage Gain Total Current @ 18dBm POUT Total Current @ 19dBm POUT EVM @ 18dBm POUT2 EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold4 POUT Spectral Mask Compliance5, 6 Minimum 4.90 3.0 Typical 3.3 27 250 260 2.5 3.5 450 5.0 21.0 Maximum 5.35 3.6 Minimum 5.15 3.0 Typical 3.3 28 240 250 2.5 3.5 500 5.0 20.0 Maximum 5.85 3.6 Unit GHz V dB mA mA % % mV dBm dBm Electrical Characteristics1 Single Tone Parameter Frequency10 Supply Voltage Gain7 Total Quiescent Current7, 11 Minimum 4.90 3.0 Typical 3.3 27 140–220 Maximum 5.35 3.6 Minimum 5.15 3.0 Typical 3.3 27.5 140–220 Maximum 5.85 3.6 Unit GHz V dB mA Notes: 1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50Ω system. 2. Percentage includes system noise floor of EVM=0.8%. 3. Not measured 100% in production. 4. POUT measured at PIN corresponding to power detection threshold. 5. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6. PIN is adjusted to point where performance approaches spectral mask requirements. 7. 100% Production screened. 8. Bias Current is included in the total quiescent current. 9. VL is set to logic level for device off operation. 10. See Application information on Page 3. 11. See Data on Page 8. ©2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Electrical Characteristics12 Single Tone (Continued) Parameter Bias Current at pin VM8 P1dB Compression7 Current @ P1dB Comp7 Standby Current9 Shutdown Current (VM=0V) Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold3, 4 Frequency 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control Pin (VL): Device Off Device On Logic Current Turn-on Time13 Turn-off Time Spurious (Stability)14 Minimum Typical 16 26 425 1.9