SFH9240

Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 0.344 Ω (Typ.) SFH9240 BVDSS = -200 V RDS(on) = 0.5 Ω ID = -11 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds o o o Value -200 -11 -7.7 1 O Units V A A V mJ A mJ V/ns W W/ C o -44 + 30 _ 807 -11 12.6 -5.0 126 1.0 - 55 to +150 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 1.0 -40 o Units C/W Rev. A SFH9240 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.16 ------6.5 207 81 16 23 54 19 46 9.2 22.9 ---4.0 -100 100 -10 -100 0.5 -310 120 40 55 115 50 59 --nC ns µA Ω S pF V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-5.5A VDS=-40V,ID=-5.5A 4 O 4 O o V/ C ID=-250µA V nA 1220 1585 VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-11A, RG=9.1Ω See Fig 13 45 OO VDS=-160V,VGS=-10V, ID=-11A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------180 1.24 -11 -44 -5.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-11A,VGS=0V TJ=25 C,IF=-11A diF/dt=100A/µs 4 O o o 1 O 2 O 3 O 4 O 5 O Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=10mH, IAS=-11A, VDD=-50V, RG=27Ω*, Starting TJ =25oC _ _ _ ISD