SFM9210

Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 2.25 Ω (Typ.) SFM9210 BVDSS = -200 V RDS(on) = 3.0 Ω ID = -0.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * Linear Derating Factor * 2 O 1 O 1 O 3 O o o Value -200 -0.5 -0.3 1 O Units V A A V mJ A mJ V/ns W W/ C o -4.0 + 30 _ 133 -0.5 0.16 -5.0 1.63 0.013 - 55 to +150 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o C 300 Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 77 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. A SFM9210 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.2 ------0.6 220 45 16 10 20 27 12 9 1.8 4.8 ---4.0 -100 100 -10 -100 3.0 -285 65 25 30 50 65 35 11 --nC ns pF µA Ω S V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-0.25A VDS=-40V,ID=-0.25A 4 O 4 O o V/ C ID=-250µA V nA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-1.75A, RG=18 Ω See Fig 13 45 OO VDS=-160V,VGS=-10V, ID=-1.75A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------110 0.42 -0.5 -4.0 -4.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-0.5A,VGS=0V TJ=25 C,IF=-1.75A diF/dt=100A/µs 4 O o o Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=70mH, I =-0.5A, V =-50V, R =27Ω *, Starting T =25oC O AS DD G J 3 _ _ _ O ISD