SFP9614

Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : -10 µA (Max.) @ VDS = -250V ν Low RDS(ON) : 3.5 Ω (Typ.) 1 2 3 SFP9614 BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1. 6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds o o o Value -250 -1.6 -1.0 1 O Units V A A V mJ A mJ V/ns W W/ C o -6.5 + 30 _ 112 -1.6 2.0 -4.8 20 0.16 - 55 to +150 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 6.25 -62.5 o Units C/W Rev. B1 2001 Fairchild Semiconductor Corporation SFP9614 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller” ) Charge Min. Typ. Max. Units -250 --2.0 ------------------0.21 ------1.0 225 35 13 10 18 24 11 9 2.0 4.6 ---4.0 -100 100 -10 -100 4.0 -295 55 20 30 45 60 30 11 --nC ns pF µA Ω S V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-250V VDS=-200V,TC=125 C VGS=-10V,ID=-0.8A VDS=-40V,ID=-0.8A 4 O 4 O o V/ C ID=-250µA V nA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-125V,ID=-1.6A, RG=24Ω See Fig 13 45 OO VDS=-200V,VGS=-10V, ID=-1.6A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------130 0.61 -1.6 -6.5 -4.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-1.6A,VGS=0V TJ=25 C,IF=-1.6A diF/dt=100A/µs 4 O o o Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=70mH, I =-1.6A, V =-50V, R =27Ω *, Starting T =25oC O AS DD G J 3 _ _ _ O ISD< -1.6A, di/dt< 250A/µs, VDD