SFR9214

Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Lower RDS(ON) : 3.15 Ω (Typ.) SFR/U9214 BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1.53 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -250 -1.53 -0.97 1 O Units V A A V mJ A mJ V/ns W W W/ C o -6.1 + 30 _ 110 -1.53 1.9 -4.8 2.5 19 0.15 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 6.58 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B1 2001 Fairchild Semiconductor Corporation SFR/U9214 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller “) Charge Min. Typ. Max. Units -250 --2.0 ------------------0.21 ------1.0 225 35 13 10 18 24 11 9 2.0 4.6 ---4.0 -100 100 -10 -100 4.0 -295 55 20 30 45 60 30 11 --nC ns pF µA Ω S V o P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-250V VDS=-200V,TC=125 C VGS=-10V,ID=-0.77A VDS=-40V,ID=-0.77A 4 O 4 O o V/ C ID=-250µA V nA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-125V,ID=-1.6A, RG=24Ω See Fig 13 45 OO VDS=-200V,VGS=-10V, ID=-1.6A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------130 0.61 -1.53 -6.1 -4.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-1.53A,VGS=0V TJ=25 C,IF=-1.6A diF/dt=100A/µs 4 O o o Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature o 2 O L=75mH, IAS=-1.53A, VDD=-50V, RG=27Ω*, Starting TJ =25 C o _ 3 ISD