SFR9220

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 Ω (Typ.) 1 SFR/U9220 BVDSS = -200 V RDS(on) = 1.5 Ω ID = -3.1 A D-PAK 2 1 3 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * 2 O 1 O 1 O 3 O o o Value -200 -3.1 -1.96 1 O Units V A A V mJ A mJ V/ns W W W/ C o -12 + 30 _ 256 -3.1 3.0 -5.0 2.5 30 0.24 - 55 to +150 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 4.17 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation SFR/U9220 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.18 ------2.2 415 70 26 12 22 33 15 15 3.3 7.5 ---4.0 -100 100 -10 -100 1.5 -540 105 40 35 55 75 40 19 --nC ns pF µA Ω Ω V V nA P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-1.6A VDS=-40V,ID=-1.6A 4 O 4 O o o V/ C ID=-250µA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-3.5A, RG=18Ω See Fig 13 45 OO VDS=-160V,VGS=-10V, ID=-3.5A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------125 0.59 -3.1 -12 -5.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-3.1A,VGS=0V TJ=25 C,IF=-3.5A diF/dt=100A/µs 4 O o o O 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=40mH, I AS=-3.1A, V DD=-50V, R G=27Ω*, Starting T J =25oC 3 _ _ < O ISD