Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low RDS(ON) : 0.876 Ω (Typ.)
1 2 3
SFS9634
BVDSS = -250 V RDS(on) = 1.3 Ω ID = -3.4 A
TO-220F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds
o o o
Value -250 -3.4 -2.6
1 O
Units V A A V mJ A mJ V/ns W W/ C
o
-14 + 30 _ 145 -3.4 3.3 -4.8 33 0.26 - 55 to +150
O 1 O 1 O 3 O
2
o
C
300
Thermal Resistance
Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 3.79 62.5 Units
o
C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
SFS9634
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units -250 --2.0 ------------------0.22 ------3.2 750 110 45 13 20 40 16 29 5.4 15.5 ---4.0 -100 100 -10 -100 1.3 -975 165 65 35 50 90 40 37 --nC ns pF µA Ω Ω V V nA
P-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-250V VDS=-200V,TC=125 C VGS=-10V,ID=-1.7A VDS=-40V,ID=-1.7A
4 O 4 O
o
o V/ C ID=-250µA
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-125V,ID=-5.0A, RG=12 Ω See Fig 13
45 OO
VDS=-200V,VGS=-10V, ID=-5.0A See Fig 6 & Fig 12
45 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
Min. Typ. Max. Units --------170 1.17 -3.4 -14 -5.0 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-3.4A,VGS=0V TJ=25 C,IF=-5.0A diF/dt=100A/µs
4 O
o o
O
4
Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=20mH, I AS=-3.4A, V DD=-50V, R G=27Ω*, Starting T J =25oCo _ _ _ 3 O ISD
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