SFW9540

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.161 Ω (Typ.) 1 SFW/I9540 BVDSS = -100 V RDS(on) = 0.2 Ω ID = -17 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -100 -17 -12 1 O Units V A A V mJ A mJ V/ns W W W/ C o -68 ±30 578 -17 13.2 -6.5 3.8 132 0.88 - 55 to +175 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.14 40 62.5 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. C SFW/I9540 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller” ) Charge Min. Typ. Max. Units -100 --2.0 ------------------0.11 ------9.5 240 83 14 22 45 26 43 7.4 17.8 ---4.0 -100 100 -10 -100 0.2 -360 125 40 55 100 60 54 --nC ns µA Ω S pF V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V VDS=-100V VDS=-80V,TC=150 C VGS=-10V,ID=-8.5A VDS=-40V,ID=-8.5A 4 O 4 O o V/ C ID=-250µA V nA 1180 1535 VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-50V,ID=-17A, RG=12 Ω See Fig 13 VDS=-80V,VGS=-10V, ID=-17A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------135 0.7 -17 -68 -4.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-17A,VGS=0V TJ=25 C,IF=-17A diF/dt=100A/µs 4 O o o Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=3.0mH, I =-17A, V =-25V, R =27Ω *, Starting T =25oC O AS DD G J 3 _ _ _ O ISD