SGF15N90D

SGF15N90D IGBT SGF15N90D General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 2.0 V @ IC = 15A High input impedance Built-in fast recovery diode Applications Home appliances, induction heaters, induction hea 1 ting JARs, and microwave ovens. C G TO-3PF C E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes,1/8” from case for 5 seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGF15N90D 900 ± 25 15 12 30 12 83 33 -55 to +150 -55 to +150 300 Units V V A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 1.5 2.86 40 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGF15N90D Rev. A1 SGF15N90D Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 900 ------1.0 ± 500 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 2.5A, VGE = 15V IC = 15A, VGE = 15V 4.0 --5.0 1.4 2.0 7.0 1.8 2.7 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz ---1500 80 50 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 15A, RG = 51Ω, VGE = 15V, Resistive Load, TC 25°C VCE = 600 V, IC = 15A, VGE = 15V -------50 180 150 200 60 15 20 80 280 230 320 80 --ns ns ns ns nC nC nC Electrical Characteristics of DIODE T Symbol VFM trr IR Parameter Diode Forward Voltage Diode Reverse Recovery Time Instantaneous Reverse Current C = 25°C unless otherwise noted Test Conditions IF = 4A IF = 15A IF = 15A, di/dt = 20 A/µs VRRM = 900V Min. ----- Typ. 1.1 1.45 0.8 0.03 Max. 1.6 1.7 1.2 1.2 Units V V us uA ©2002 Fairchild Semiconductor Corporation SGF15N90D Rev. A1 SGF15N90D 50 Common Emitter TC = 25℃ 40 20V 15V 10V 50 9V 40 Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 8V 30 Collector Current, I C [A] Collector Current, IC [A] 30 20 7V 10 VGE = 6V 0 0 1 2 3 4 5 20 10 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage,VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 3.0 VGE = 15V 10 Common Emitter TC = -40℃ Collector-Emitter Voltage , VCE [V] Collector-Emitter Voltage, VCE [V] 8 2.5 20A 2.0 15A 10A 1.5 IC = 5A 6 4 15A 10A 20A IC = 5A 2 1.0 -50 0 50 100 150 0 4 8 12 16 20 Case Temperature, TC [℃] Gate-Emitter Voltage, VGE [V] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Saturation Voltage vs. VGE 10 Common Emitter T C = 25℃ 10 Common Emitter TC = 125℃ Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 8 8 6 6 15A 4 10A 20A 2 IC = 5A 0 4 8 12 16 20 15A 4 10A 20A 2 IC = 5A 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGF15N90D Rev. A1 SGF15N90D 2000 Cies 10000 VCC = 600V IC = 15A VGE = ± 15V TC = 25℃ Switching Time [ns] Capacitance [pF] 1000 1000 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Tf Tr 100 Toff Ton 10 Coes Cres 1 10 0 50 100 150 200 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs. Gate Resistance 1000 VCC=600V R G =51Ω VG E= ± 15V T C =25℃ 15 Common Emitter VCC = 600V, RL = 40Ω TC = 25℃ Tf 100 Tdoff Gate-Emitter Voltage, VGE [V] 12 Switching Time [ns] 9 Tr 6 3 Tdon 10 0 3 6 9 12 15 0 0 20 40 60 80 Collector Current,Ic [A] Gate Charge, Qg [nC] Fig 9. Switching Characteristics vs. Collector current Fig 10. Gate Charge Characteristics 100 IC MAX. (Pulsed) IC MAX. (Continuous) 10 10 Thermal Response, Zthjc [C/W] Collector Current ,IC [A] 100us 10ms 1 DC Operation 1ms 1 0.5 0.2 0.1 o 0.1 0.05 0.02 0.01 Pdm t1 t2 0.1 Single Nonrepetitive Pulse TC = 25℃ Curve must be darated linearly with increase in temperature 1 10 100 1000 0.01 single pulse 10 -5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0.01 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, VCE [V] Rectangular Pulse Duration [sec] Fig 11. SOA Characteristics ©2002 Fairchild Semiconductor Corporation Fig 12. Transient Thermal Impedance of IGBT SGF15N90D Rev. A1 SGF15N90D 30 Reverse Recovery Time, t rr [us] TC = 25℃ ━━ TC = 100℃ ------ 1.0 0.9 0.8 0.7 0.6 0.5 t rr 0.4 0.3 0.2 Irr 0.1 IF = 15A T C = 25℃ 100 90 Reverse Recovery Current, I rr [A] 10 80 70 60 50 40 30 20 10 0 0 40 80 120 160 200 Forward Current, IF [A] 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 Forward Voltage, VFM [V] 0.0 di/dt [A/us] Fig 13. Forward Characteristics Fig 14. Reverse Recovery Characteristics vs. di/dt 1.2 12 di/dt = 20A/us T C = 2 5℃ 1000 TC = 25℃ ━━ TC = 150℃ -----100 Reverse Recovery Time, trr [us] Reverse Recovery Current, Irr [A] 1.0 10 0.8 t rr 0.6 I rr 8 Reverse Current, I R [uA] 10 6 1 0.4 4 0.2 2 0.1 0.0 0 5 10 15 20 0 0.01 0 300 600 900 Forward Current, IF [A] Reverse Voltage, VR [V] Fig 15. Reverse Recovery Characteristics vs. Forward current Fig 16. Reverse Current vs. Reverse Voltage 100 T C = 25℃ Junction Capacitance, C j [pF] 80 60 40 20 0 0.1 1 10 100 Reverse Voltage, VR [V] Fig 17. Junction Capacitance ©2002 Fairchild Semiconductor Corporation SGF15N90D Rev. A1 SGF15N90D Package Dimension TO-3PF 5.50 ±0.20 4.50 ±0.20 15.50 ±0.20 ø3.60 ±0.20 3.00 ±0.20 (1.50) 10.00 ±0.20 10 ° 26.50 ±0.20 23.00 ±0.20 16.50 ±0.20 14.50 ±0.20 0.85 ±0.03 16.50 ±0.20 2.00 ±0.20 1.50 ±0.20 14.80 ±0.20 2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 –0.10 +0.20 2.00 ±0.20 2.50 ±0.20 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.90 –0.10 +0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGF15N90D Rev. A1 22.00 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5