SGF23N60UF

SGF23N60UF October 2001 IGBT SGF23N60UF Ultra-Fast IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A • High Input Impedance Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C G TO-3PF GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGF23N60UF 600 ± 20 23 12 92 75 30 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 1.6 40 Units °C/W °C/W ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A SGF23N60UF Electrical Characteristics of IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 12mA, VCE = VGE IC = 12A, VGE = 15V IC = 23A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---720 100 25 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------17 27 60 70 115 135 250 23 32 100 220 205 320 525 49 11 14 14 --130 150 --400 --200 250 --800 80 17 22 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 12A, VGE = 15V Measured 5mm from PKG ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A SGF23N60UF 100 Common Emitter T C = 25 ℃ 80 20V 15V 50 Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃ Collector Current, I C [A] 60 12V Collector Current, IC [A] 8 40 30 40 VGE = 10V 20 20 10 0 0 2 4 6 0 0.5 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 18 Common Emitter VGE = 1 5V VCC = 300V Load Current : peak of square wave Collector - Emitter Voltage, VC E [V] 15 24A 3 2 12A Load Current [A] 12 9 IC = 6 A 1 6 3 0 0 30 60 90 120 150 0 Duty cycle : 50% TC = 100℃ Power Dissipation = 16W 0.1 1 10 100 1000 Case Temperature, TC [℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 2 5℃ 20 Common Emitter TC = 125 ℃ Collector - Emitter Voltage, VC E [V] Collector - Emitter Voltage, VC E [V] 16 16 12 12 8 8 24A 4 IC = 6A 0 12A 4 IC = 6 A 0 0 4 24A 12A 8 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGF23N60UF Rev. A SGF23N60UF 1200 Common Emitter V GE = 0V, f = 1MHz T C = 25 ℃ Cies 200 Common Emitter VCC = 300V, VGE = ± 15V IC = 12A T C = 25 ℃ TC = 125 ℃ 1000 Ton 100 Capacitance [pF] 800 Switching Time [ns] Tr 600 Coes 400 200 Cres 0 1 10 30 10 1 10 100 200 Collector - Emitter Voltage, V CE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Common Emitter V CC = 3 00V, V GE = ± 15V IC = 1 2A T C = 2 5℃ T C = 1 25 ℃ 1000 Eoff Switching Loss [uJ] Toff Eon Eon Eoff 100 Common Emitter VCC = 300V, VGE = ± 15V IC = 12A T C = 25 ℃ TC = 125 ℃ 30 1 10 100 200 Tf Toff 100 Tf 50 1 10 100 200 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 200 Common Emitter V CC = 3 00V, VGE = ± 15V R G = 2 3Ω T C = 25 ℃ TC = 1 25 ℃ 1000 Common Emitter V CC = 300V, V GE = ± 15V R G = 23 Ω T C = 25 ℃ T C = 125 ℃ 100 Switching Time [ns] Switching Time [ns] Toff Tf Ton Toff 100 Tr 10 4 8 12 16 20 24 50 Tf 4 8 12 16 20 24 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGF23N60UF Rev. A SGF23N60UF 1000 15 Common Emitter R L = 25 Ω T C = 25 ℃ Gate - Emitter Voltage, VGE [ V ] 12 Switching Loss [uJ] 9 3 00 V 6 VCC = 100 V 3 200 V 100 Eoff Eon Eon Eoff Common Emitter V CC = 3 00V, V GE = ± 15V R G = 2 3Ω T C = 25 ℃ T C = 1 25 ℃ 4 8 12 16 20 24 10 0 0 10 20 30 40 50 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 300 100 IC M AX. (Pulsed) 200 100 Collector Current, IC [A] IC M AX. (Continuous) 10 1㎳ 100us Collector Current, IC [A] 50us 10 DC Operation 1 Single Nonrepetitive Pulse TC = 25 ℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000 1 0.1 Safe Operating Area VGE = 20V, TC = 100℃ 0.1 1 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 10 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 0.01 single pulse 0.01 1E-5 1E-4 1E-3 0.01 0.1 t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A SGF23N60UF Package Dimension TO-3PF 5.50 ±0.20 4.50 ±0.20 15.50 ±0.20 ø3.60 ±0.20 3.00 ±0.20 (1.50) 10.00 ±0.20 10 ° 26.50 ±0.20 23.00 ±0.20 16.50 ±0.20 14.50 ±0.20 0.85 ±0.03 16.50 ±0.20 2.00 ±0.20 1.50 ±0.20 14.80 ±0.20 2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 –0.10 +0.20 2.00 ±0.20 2.50 ±0.20 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.90 –0.10 +0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A 22.00 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H4