SGF40N60

SGF40N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) TO-3PF CO-PAK IGBT APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast C G E ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25°C Collector Current @ Tc = 100°C Rating 600 ±20 40 20 160 15 160 96 38 -55 ~ 150 -55 ~ 150 300 Units V V A A A A A W W °C °C °C ICM (1) IF IFM PD Pulsed Collector Current Diode Continuous Forward Current @ Tc = 100°C Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25°C Maximum Power Dissipation @Tc = 100°C Tj Tstg TL Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. For Soldering Purposes, 1/8” from case for 5 seconds Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature Rev.B ©1999 Fairchild Semiconductor Corporation SGF40N60UFD ELECTRICAL CHARACTERISTICS (IGBT PART) (Tc=25°C,Unless Otherwise Specified) Symbol BVCES ∆VCES/ ∆TJ VGE(th) ICES IGES VCE(sat) CO-PAK IGBT Characteristics C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage Test Conditions VGE = 0V , IC = 250uA VGE = 0V , IC = 1mA Min 600 - Typ Max 0.6 - Units V V/°C IC = 20mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Ic=20A, VGE = 15V Ic=40A, VGE = 15V VGE = 0V , f = 1MHz VCE = 30V 4.5 - 5.5 2.0 2.6 1430 168 50 12 20 68 50 0.08 0.19 0.27 92 21 28 14 7.5 250 100 2.6 100 100 0.47 138 31 42 - V uA nA V V pF pF pF ns ns ns ns mJ mJ mJ nC nC nC nH Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Turn on Switching Loss Turn off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300V , IC = 20A VGE = 15V RG = 10Ω Inductive Load - Vcc = 300V VGE = 15V Ic = 20A Measured 5mm from PKG - SGF40N60UFD ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol VFM CO-PAK IGBT Characteristics Diode Forward Voltage Test Conditions IF=15A Tc =25°C Tc =100°C Min Min Typ 1.4 1.3 42 74 4.0 6.5 80 220 Max Units 1.7 60 6.0 180 nC A nS V Trr Diode Reverse Recovery Time Tc =25°C Tc =10 °C IF=15A, VR=200V Tc =25°C -di/dt=200A/uS Tc =10 °C Tc =25°C Tc =100°C Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge THERMAL RESISTANCE Symbol RθJC RθJC RθJA Characteristics Junction-to-Case (IGBT) Junction-to-Case (DIODE) Junction-to-Ambient Min - Typ - Max 1.3 2.5 45 Units °C/W °C/W °C/W SGF40N60UFD 32 Vcc = 300V Load Current : peak of square wave 200 CO-PAK IGBT 24 150 Tc = 25  Tc = 100 Load Current [A] 16 Ic [A]  100 8 50 Duty cycle : 50% Tc = 100 Power Dissipation = 32W  0 0.1 0 1 10 100 1000 0 2 4 6 8 10 Frequency [kHz] Vce [V] Fig.1 Typical Load Current vs. Frequency Fig.2 Typical Output Characteristics 50 45 40 Vge = 15V 3.2 3.0 Ic = 48A 2.8 35 Max DC Current [A] 30 2.6 Vce(sat) [V] 25 20 15 2.4 2.2 Ic = 30A 2.0 10 5 0 25 50 75 1.8 1.6 Tc [ ] 100 125 150 20 40 60 80 Tc [ ] 100 120 140 Fig.3 Maximum Collector Current vs. Case Temperature Fig.4 Collector to Emitter Voltage vs. Case Temperature SGF40N60UFD CO-PAK IGBT        7KHU PDO5HVSRQVH > KM =W F@     Pdm       t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc ( (       VL H SXO QJO VH ( 5HFW DU3XO 'XU L > DQJXO VH DWRQ VHF@ Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case 2500 18 Vcc = 300V Ic = 20A 16 2000 14 12 Capacitance [pF] 1500 Cies VGE [V] 1000 500 Coes Cres 0 1 10 10 8 6 4 2 0 0 20 40 60 80 Vce [V] Qg [nC] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage Fig.7 Typical Gate Charge vs. Gate to Emitter Voltage SGF40N60UFD 1000 Vcc = 300V Ic = 20A Esw 2.0 Vcc = 300V Rg = 10Ω Vge = 15V 1.6 CO-PAK IGBT 800 Ic = 40A Eon Energy [uJ] 400 Eoff Energy [mJ] 600 1.2 0.8 Ic = 20A 200 0.4 Ic = 10A 0 0 20 40 Rg [ +] 0.0 60 80 100 20 40 60 Tc [ ] 80 100 Fig.8 Typical Switching Loss vs. Gate Resistance 1.6 Vcc = 300V Rg =10Ω Tc = 100 Fig.9 Typical Switching Loss vs. Case Temperature 1.4  Esw 1.2 100 1.0 Energy [mJ] Eoff 0.8 0.6 Eon 0.4 Ic [A] 10 0.2 Safe Operating Area Vge = 20V, Tc = 100  1000 0.0 10 15 20 25 30 35 40 1 1 10 100 Ic [A] Vce [V] Fig.10 Typical Switching loss vs. Collector to Emitter Current Fig.11 Turn-off SOA SGF40N60UFD 100 100 CO-PAK IGBT VR = 200V IF = 15A 80 Forward Current IF [A] 10 Trr [ns] Tc = 100  Tc = 25  Tc = 100  60 Tc = 25  40 1 0.0 0.5 1.0 1.5 2.0 2.5 100 1000 Forward Voltage Drop V F [V] -di/dt [A/us] Fig.12 Typical Forward Voltage Drop vs. Forward Current 100 VR = 200V IF = 15A Fig.13 Typical Reverse Recovery Time vs. di/dt 800 VR = 200V 700 IF = 15A 600 Tc = 100  Qrr [ns] Tc = 25 500 I rr - [A] 10  Tc = 100 400  300 200 Tc = 25 100  1 100 -di/dt [A/us] 1000 0 100 1000 -di/dt [A/us] Fig.14 Typical Reverse Recovery Current vs. di/dt Fig.15 Typical Stored Charge vs. di/dt TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANAR TM MICROWIRETM POPTM PowerTrenchTM QSTM QuietSeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or © whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. LIFE SUPPORT POLICY Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notices in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production