SGH20N60RUFD

SGH20N60RUFD IGBT SGH20N60RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P GCE E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGH20N60RUFD 600 ± 20 32 20 60 25 220 10 195 75 -55 to +150 -55 to +150 300 Units V V A A A A A us W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.64 0.83 40 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGH20N60RUFD Rev. B1 SGH20N60RUFD Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 32A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1323 254 47 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----30 49 48 152 524 473 997 30 51 52 311 568 1031 1599 -55 10 25 14 --70 200 --1400 --75 400 --2240 -80 15 40 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 20A, VGE = 15V Measured 5mm from PKG = 25°C unless otherwise noted Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C Test Conditions T C = 2 5° C IF = 25A TC = 100°C T C = 2 5° C TC = 100°C IF= 25A, di/dt = 200 A/us T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.4 1.3 50 105 4.5 8.5 112 420 Max. 1.7 -95 -10 -375 -- Units V ns A nC ©2002 Fairchild Semiconductor Corporation SGH20N60RUFD Rev. B1 SGH20N60RUFD 60 Common Emitter TC = 25℃ 50 12V 20V 15V 60 Common Emitter VGE = 15V T C = 25℃ ━━ T C = 125℃ ------ 50 Collector Current, IC [A] 40 Collector Current, IC [A] 8 40 30 VGE = 10V 20 30 20 10 10 0 0 2 4 6 0 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [ V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 28 Common Emitter V GE = 1 5V Collector - Emitter Voltage, VC E [V] VCC = 300V Load Current : peak of square wave 24 40A 4 3 30A 20A Load Current [A] 20 16 2 12 IC = 1 0A 8 1 4 0 -50 0 50 100 150 Duty cycle : 50% TC = 100℃ Power Dissipation = 32W 0.1 1 10 100 1000 0 Case Temperature, T C [ ℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25℃ 20 Common Emitter TC = 125℃ Collector - Emitter Voltage, V E [V] C 16 Collector - Emitter Voltage, VCE [V] 16 12 12 8 8 40A 4 IC = 10A 0 20A 40A 4 IC = 10A 0 0 4 8 12 16 20 20A 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGH20N60RUFD Rev. B1 SGH20N60RUFD 2400 2000 Cies Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Capacitance [pF] Common Emitter V CC = 300V, V GE = ± 15V IC = 20A T C = 2 5℃ ━━ T C = 125℃ ------ Ton 1600 Coes 1200 Switching Time [ns] 100 Tr 800 Cres 400 0 1 10 10 1 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Common Emitter V CC = 3 00V, V GE = ± 15V IC = 2 0A T C = 2 5℃ ━━ T C = 1 25℃ ------ Eoff Switching Loss [uJ] 1000 Eon Toff Tf Toff Eoff Tf 100 100 1 10 100 1 Common Emitter V CC = 300V, V GE = ± 15V IC = 20A T C = 2 5℃ ━━ T C = 125℃ -----10 100 Gate Resistance, R G [Ω ] Gate Resistance, R G [ Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 10Ω TC = 2 5 ℃ ━━ TC = 125 ℃ ------ Ton Switching Time [ns] 100 Tr Switching Time [ns] Toff Tf Toff Tf 100 Common Emitter VGE = ± 15V, RG = 10Ω TC = 2 5℃ ━━ TC = 125℃ -----10 15 20 25 30 35 40 10 10 15 20 25 30 35 40 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGH20N60RUFD Rev. B1 SGH20N60RUFD 15 Common Emitter VGE = ± 15V, RG = 10Ω T C = 25℃ ━━ T C = 125℃ -----Common Emitter RL = 15 Ω TC = 25℃ VCC = 100 V 9 300 V 200 V Eoff 1000 Eon Eoff Gate - Emitter Voltage, V [ V ] GE 12 Switching Loss [uJ] 6 3 100 10 15 20 25 30 35 40 0 0 10 20 30 40 50 60 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 IC M AX. (Pulsed) 50 ㎲ IC M AX. (Continuous) 100 ㎲ 100 Collector Current, I C [A] 10 DC Operation Collector Current, IC [A] 1㎳ 10 1 Single Nonrepetitive Pulse T C = 2 5 ℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000 Safe Operating Area V GE = 20V, TC = 100℃ 1 1 10 100 1000 0.1 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm t1 t2 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH20N60RUFD Rev. B1 SGH20N60RUFD 100 TC = 25 ℃ ━━ TC = 1 00 ℃ - ----- 100 VR = 200V IF = 25A T C = 25℃ ━━ T C = 100℃ ------ Reverse Recovery Current, I rr [A] 0 1 2 3 Forward Current, IF [A] 10 10 1 1 100 1000 Forward Voltage Drop, V FM [V] di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 1000 120 V R = 200V IF = 25A T C = 2 5 ℃ ━━ T C = 100 ℃ -----VR = 200V IF = 25A TC = 2 5℃ ━━ TC = 100℃ ------ Stored Recovery Charge, Qr r [nC] 800 Reverce Recovery Time, t rr [ns] 1000 100 600 80 400 60 200 40 0 100 20 100 1000 di/dt [A/us] di/dt [A/us] Fig 20. Stored Charge Fig 21. Reverse Recovery Time ©2002 Fairchild Semiconductor Corporation SGH20N60RUFD Rev. B1 SGH20N60RUFD Package Dimension TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH20N60RUFD Rev. B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FASTâ CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1