SGH23N60UF

SGH23N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A) * High Input Impedance N-CHANNEL IGBT TO-3P APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast C G E ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25°C Collector Current @ Tc = 100°C Rating 600 ±20 23 12 92 100 40 -55 ~ 150 -55 ~ 150 300 Units V V A A A W W °C °C °C ICM (1) PC Pulsed Collector Current Maximum Power Dissipation @Tc = 25°C Maximum Power Dissipation @Tc = 100°C Tj Tstg TL Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. For Soldering Purposes, 1/8” from case for 5 seconds Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature Rev.B ©1999 Fairchild Semiconductor Corporation SGH23N60UF ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified) Symbol BVCES ∆VCES/ ∆TJ VGE(th) ICES IGES VCE(sat) N-CHANNEL IGBT Characteristics C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage Test Conditions VGE = 0V , IC = 250uA VGE = 0V , IC = 1mA Min 600 - Typ Max 0.6 - Units V V/°C IC = 12mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Ic=12A, VGE = 15V Ic=23A, VGE = 15V VGE = 0V , f = 1MHz VCE = 30V 4.0 - 5.5 1.95 2.6 720 65 26 12 20 55 100 0.11 0.19 0.3 48 11 14 7.5 7.5 250 100 2.6 85 220 0.5 72 16 21 - V uA nA V V pF pF pF ns ns ns ns mJ mJ mJ nC nC nC nH Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Turn on Switching Loss Turn off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300V , IC = 12A VGE = 15V RG = 23Ω Inductive Load - Vcc = 300V VGE = 15V Ic = 12A Measured 5mm from PKG - SGH23N60UF THERMAL RESISTANCE Symbol RθJC RθJA RθCS N-CHANNEL IGBT Characteristics Junction-to-Case Junction-to-Case Case-to-Sink Min - Typ 0.24 Max 1.2 40 - Units °C/W °C/W °C/W SGH23N60UF 20 Vcc = 300V Load Current : peak of square wave 100 N-CHANNEL IGBT 80 15 Tc = 25  Tc = 100 Load Current [A] 60 10 Ic [A]  40 5 20 Duty cycle : 50% Tc = 100 Power Dissipation = 21W  0 0.1 0 1 10 100 1000 0 2 4 6 8 10 Frequency [kHz] Vce [V] Fig.1 Typical Load Current vs. Frequency Fig.2 Typical Output Characteristics 30 Vge = 15V 3.2 3.0 25 2.8 20 Ic = 23A Max DC Current [A] 2.6 Vce(sat) [V] 15 2.4 2.2 10 Ic = 12A 2.0 5 1.8 0 25 50 75 1.6 Tc [ ] 100 125 150 20 40 60 80 Tc [ ] 100 120 140 Fig.3 Maximum Collector Current vs. Case Temperature Fig.4 Collector to Emitter Voltage vs. Case Temperature SGH23N60UF 10 N-CHANNEL IGBT T hermal Response [Zthjc] 1 0 .5 0 .2 0 .1 0 .1 Pdm 0 .0 5 t1 0 .0 2 0 .0 1 s ingle puls e t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc 0 .0 0 1 0 .0 1 0 .1 1 10 0 .0 1 0 .0 0 0 0 1 0 .0 0 0 1 Rectangular Pulse Duration [sec] Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 12A 16 1000 14 800 Capacitance [pF] Cies 12 600 VGE [V] Coes Cres 1 10 10 8 400 6 4 200 2 0 0 0 10 20 30 40 Vce [V] Qg [nC] Fig.6 Typical Capacitance vs. Collector to Emitter Voltage Fig.7 Typical Gate Charge vs. Gate to Emitter Voltage SGH23N60UF 700 Vcc = 300V Ic = 12A 600 Esw 1.2 1.4 Vcc = 300V Rg = 23Ω Vge = 15V N-CHANNEL IGBT Ic =24A 500 1.0 Energy [uJ] 400 Energy [mJ] Eon 0.8 300 Eoff 0.6 Ic = 12A 0.4 200 Ic = 6A 100 0.2 0 0 40 80 Rg [ +] 0.0 160 200 20 40 120 60 Tc [ ] 80 100 Fig.8 Typical Switching Loss vs. Gate Resistance 1.2 Vcc = 300V Rg =23Ω Tc = 100 Esw Fig.9 Typical Switching Loss vs. Case Temperature  1.0 100 0.8 Eoff Energy [mJ] 0.6 Ic [A] 10 Eon 0.4 0.2 Safe Operating Area Vge = 20V, Tc = 100  1000 0.0 4 8 12 16 20 24 1 1 10 100 Ic [A] Vce [V] Fig.10 Typical Switching loss vs. Collector to Emitter Current Fig.11 Turn-off SOA TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANAR TM MICROWIRETM POPTM PowerTrenchTM QSTM QuietSeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or © whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. LIFE SUPPORT POLICY Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notices in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production