SGH80N60

SGH80N60UF IGBT SGH80N60UF Ultra-Fast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A • High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G E TC = 25°C unless otherwise noted TO-3P GCE Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGH80N60UF 600 ± 20 80 40 220 25 280 195 78 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.64 40 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGH80N60UF Rev. A1 SGH80N60UF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 40mA, VCE = VGE IC = 40A, VGE = 15V IC = 80A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2790 350 100 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------23 50 90 50 570 590 1160 30 55 150 160 630 940 1580 175 25 60 14 --130 150 --1500 --200 250 --2000 250 40 90 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 40A, VGE = 15V Measured 5mm from PKG ©2002 Fairchild Semiconductor Corporation SGH80N60UF Rev. A1 SGH80N60UF 250 Common Emitter T C = 25 ℃ 200 20V 15V 12V 120 Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃ 100 Collector Current, I C [A] Collector Current, IC [A] 8 80 150 VGE = 10V 60 100 40 50 20 0 0 2 4 6 0 0.5 1 10 Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 60 Common Emitter VGE = 15V V CC = 300V Load Current : peak of square wave Collector - Emitter Voltage, VCE [V] 50 80A 3 Load Current [A] 40 2 40A 30 IC = 20A 1 20 10 0 0 30 60 90 120 150 0 Duty cycle : 50% TC = 100 ℃ Power Dissipation = 60W 0.1 1 10 100 1000 Case Temperature, T C [℃ ] Frequency [Khz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 ℃ 20 Common Emitter T C = 125℃ Collector - Emitter Voltage, VC E [V] 16 Collector - Emitter Voltage, VCE [V] 16 12 12 8 8 4 40A IC = 20A 0 0 4 8 80A 80A 4 IC = 20A 0 0 4 8 12 16 20 40A 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGH80N60UF Rev. A1 SGH80N60UF 4500 4000 3500 Common Emitter V GE = 0V, f = 1MHz T C = 25 ℃ Cies 500 Common Emitter V CC = 300V, VGE = ± 15V IC = 40A T C = 2 5℃ T C = 125℃ T on Capacitance [pF] 2500 2000 1500 Coes 1000 500 0 1 10 30 Cres Switching Time [ns] 3000 Tr 100 20 1 10 70 Collector - Emitter Voltage, V CE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 2000 Common Emitter VCC = 3 00V, VGE = ± 15V IC = 4 0A T C = 2 5℃ TC = 1 25℃ 5000 Common Emitter V CC = 300V, V GE = ± 15V IC = 40A T C = 25 ℃ T C = 125 ℃ 1000 Toff Switching Time [ns] Switching Loss [uJ] Eoff Eon 1000 Tf Eoff 100 Tf 20 1 10 80 100 1 10 80 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 500 Common Emitter VCC = 3 00V, V GE = ± 15V RG = 5Ω T C = 25 ℃ TC = 1 25 ℃ 100 2000 Common Emitter V CC = 300V, V GE = ± 15V R G = 5Ω T C = 25 ℃ T C = 125 ℃ Toff Tf Toff 100 Tf Tr 1000 Switching Time [ns] Ton 10 10 20 30 40 50 60 70 80 Switching Time [ns] 20 10 20 30 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGH80N60UF Rev. A1 SGH80N60UF 3000 15 Common Emitter RL = 7.5 Ω T C = 25 ℃ Gate - Emitter Voltage, VGE [ V ] 1000 12 Switching Loss [uJ] 9 3 00 V 6 V CC = 100 V 3 200 V 100 Eoff Common Emitter V CC = 3 00V, V GE = ± 15V RG = 5Ω T C = 2 5℃ T C = 1 25℃ 10 20 30 40 50 60 70 80 Eon 10 0 0 0 30 60 90 120 150 180 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 IC M AX. (Pulsed) 100 500 Collector Current, IC [A] 100us 1㎳ 10 DC Operation Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000 Collector Current, I C [A] IC M AX. (Continuous) 50us 100 10 1 Safe Operating Area V GE =20V, TC=100 C 1 1 10 100 1000 o 0.1 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 1 0.5 Thermal Response, Zthjc [℃/W] 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm single pulse t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH80N60UF Rev. A1 SGH80N60UF Package Dimension TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH80N60UF Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5