SGL40N150

SGL40N150 IGBT SGL40N150 General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. Features • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C G TO-264 G C E TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGL40N150 1500 ± 25 40 20 120 200 80 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.625 25 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGL40N150 Rev. A1 SGL40N150 Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1500 ------250 ± 100 V uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 40mA, VCE = VGE IC = 40A, VGE = 15V 3.5 -5.0 3.7 7.5 4.7 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 10V, VGE = 0V, f = 1MHz ---4000 700 300 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600V, IC = 40A, RG = 51Ω, VGE = 15V, Resistive Load, TC = 25°C VCE = 600V, IC = 40A, VGE = 15V -------90 230 245 230 140 25 45 200 700 400 400 170 25 60 ns ns ns ns nC nC nC ©2002 Fairchild Semiconductor Corporation SGL40N150 Rev. A1 SGL40N150 100 Common Emitter 80 T C = 25 C o 120 20V 10V 100 Common Emitter VGE = 15V TC = 25 C TC = 125 C o o Collector Current, IC [A] 8 Collector Current, IC [A] 15V 12V 80 60 VGE = 8V 60 40 40 20 20 0 0 2 4 6 0 0 2 4 6 8 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 6 Common Emitter VGE = 15V Collector - Emitter Voltage, V [V] CE 5 IC = 80A 6000 Common Emitter V GE=0V, f=1MHz T C=25 C C ies o 5000 4 IC = 40A 3 IC = 20A 2 Capacitance [pF] 4000 3000 2000 C oes C res 1000 1 25 50 75 100 o 0 125 1 10 Case Temperature, TC [ C] Collector - Emitter Voltage, V CE [V] Fig 3. Collector to Emitter Saturation Voltage vs. Case Temperature Fig 4. Typical Capacitance vs. Collector to Emitter Voltage 20 Common Emitter T C = 25 C 16 o 20 Common Emitter T C = 125 C 16 0 Collector - Emitter Voltage, VCE [V] 12 Collector - Emitter Voltage, V C E [V] 12 8 80A 40A 4 20A 8 80A 40A 4 20A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGL40N150 Rev. A1 SGL40N150 1000 Common Emitter VGE = ± 15V, RG = 51Ω TC = 2 5 C TC = 125 C o o 1000 Common Emitter VGE = ± 15V, RG = 51Ω TC = 25 C TC = 125 C o o Switching Time [ns] Switching Time [ns] td(on) tf td(off) 100 tr tf 100 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 90 Collector Current, IC [A] Collector Current, IC [A] Fig 7. Turn-Off Characteristics vs. Collector Current Fig 8. Turn-On Characteristics vs. Collector Current Common Emitter VG E = ± 15V, RG = 51Ω TC = 2 5 C 10000 T C = 125 C o o 1000 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A TC = 25 C o o Switching Loss [ µJ] Switching Time [ns] TC = 125 C tf Eoff 1000 Eoff Eon tf td(off) 100 100 10 20 30 40 50 60 70 80 90 10 100 Collector Current, IC [ A] Gate Resistance, RG [Ω ] Fig 9. Switching Loss vs. Collector Current Fig 10. Turn-Off Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A TC = 2 5 C o 10000 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A TC = 2 5 C o o Switching Time [ns] Switching Loss [µJ] TC = 125 C o TC = 125 C Eoff tr 100 td(on) Eoff Eon 1000 Eon 10 10 100 10 100 Gate Resistance, R G [Ω ] Gate Resistance, RG [Ω ] Fig 11. Turn-On Characteristics vs. Gate Resistance ©2002 Fairchild Semiconductor Corporation Fig 12. Switching Loss vs. Gate Resistance SGL40N150 Rev. A1 SGL40N150 14 Common Emitter R L = 15 Ω , VCC = 600V TC = 2 5 C o 100 IC MAX (Pulsed) IC MAX (Continuous) 100µs 50µs Gate - Emitter Voltage, VGE [V] 12 10 8 6 4 2 0 0 Collector Current, I C [A] 10 1ms DC Operation 1 Single Nonrepetitive 0.1 Pulse TC = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 o 0.01 25 50 75 100 125 150 Gate Charge, Qg [nC] Collector - Emitter Voltage, VCE [V] Fig 13. Gate Charge Characteristics Fig 14. SOA Characteristics ©2002 Fairchild Semiconductor Corporation SGL40N150 Rev. A1 SGL40N150 Package Dimension TO-264 6.00 ±0.20 20.00 ±0.20 (4.00) (8.30) (8.30) (2.00) (1.00) (9.00) (9.00) (11.00) (0.50) 20.00 ±0.20 2.50 ±0.10 1.50 ±0.20 (R1 (7.00) (7.00) 4.90 ±0.20 (1.50) 2.50 ±0.20 (1.50) 3.00 ±0.20 1.00 –0.10 +0.25 (2.00) 20.00 ±0.50 (R 2.0 ø3.3 0 ±0 .20 .00 0) ) (1.50) 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.10 +0.25 2.80 ±0.30 5.00 ±0.20 3.50 ±0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGL40N150 Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5