SGL60N90D

SGL60N90D FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at IC=60A) * High Input Impedance TO-264 IGBT CO-PAK 1 APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven C G E ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC Characteristics Collector-Emitter Voltage Gate - Emitter Voltage Continuous Collector Current TC = 25°C TC = 100°C Rating 900 ±25 60 42 120 TC = 25°C TC = 100°C 200 120 -55 ~ 150 Unit V V A A W °C °C ICM (1) PD Pulsed Collector Current Maximum Power Dissipation TJ TSTG TL Operating Junction Temperature Storage Temperature Range Soldering maximum lead temperature (1/8” from case for 10 seconds) 300 Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature Rev.B ©1999 Fairchild Semiconductor Corporation SGL60N90D ELECTRICAL CHARACTERISTICS (TC=25°C) Symbol BVCES VGE(th) ICES IGES VCE(sat) IGBT CO-PAK Characteristics C - E Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter Test Conditions VGE = 0V , IC = 1mA IC =60mA , VCE = 10V VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V VGE = 15V, IC =60A Min Typ 900 4.5 - Max Units 7.5 1.0 500 3.5 V V mA nA V 2.7 saturation voltage Cies Coes Cres ton tr toff tf VEC trr Input capacitance Output capacitance Reverse transfer capacitance Turn on time Rise time Turn off time Fall time Emitter-Collector Voltage Reverse recovery time VCC = 600V , IC = 60A VGE = 15V RG = 51Ω Resistive load IE = 15A IE = 15A, die/dt = -100A/µs VGE = 0V , f = 1MHz VCE = 10V 4500 800 200 350 250 500 250 1.5 0.7 800 600 1000 400 2.0 2.0 pF pF pF ns ns ns ns V µs THERMAL RESISTANCE Symbol RθJC RθJC Characteristics Junction-to-Case : IGBT Junction-to-Case : Diode Min - Typ - Max 0.625 4.0 Units °C/W °C/W SGL60N90D 300 : Tj = 25[ ] : Tj = 125[ ] 250 20V \B^ IGBT CO-PAK 5 VGE=10V,15V,20V   4 Tj = 125[ ]  Collecot Current [A] 200 15V D v ssfo u - Jd D p mmf d u p s 3 150 10V 100 2 Tj = 25[ ] 1  50 0 0 1 2 3 4 5 6 7 0 0.0 0.2 Collector-Emitter Voltage,VCE[V] 0.4 0.6 Collector-Emitter Voltage, VCE[V] 0.8 1.0 OUTPUT CHARACTERISTICS 20 0 V C E = 10[V ] 1 20 Ic , C o lle c t o r C u r r e n t [ A ] 15 0 F O R W A R D C U R R E N T [A ] T j = 125[ ] T j = 12 5 [ ] 1 00 80 10 0 60 T j = 25 [ ] 40 50 T j = 25[ ] 12 20 0 0 2 4 6 8 10 0 0 .0 0 .5 V g e , G a t e - E m it t e r V o lt a g e [ V ] 1 .0 1 .5 F O R W A R D V O L T A G E [V ] 2 .0 2 .5 T ra n s f e r C h a ra c te r is t ic s D IO D E C U R R E N T vs F O R W A R D V O L T A G E 10 4 Vce, Collector Em itter Voltage [V] Cies 600 20 500 600V 15 400 450V 300V 10 Vge, Gate Voltage [V] Ž] Capacitance [ 10 3 Coes Cres 10 2 300 200 Vge=0[V] f = 1[ ] Tc = 25 [ ]   100 Rg=51[ ] RL=10[ ] Tc=25[ ] 0 50 100 150 200 250 0 300 10 1 0 5 10 15 20 0 ‹ ‹  5 Collector - Emitte r Voltage [V] GATE CHARGE Qg [nC] SGL60N90D 800n 700n 3.0m IGBT CO-PAK Vcc = 600[V] Ic = 34[A] Vge = 15[V] Tc = 25[ ]  & td o ff 2.5m Vcc = 600[V] Ic = 34[A] 15[V] Vge = Tc = 25[ ]  & Eo n T x jud i jo h U jn f \ t ^ 600n 500n tr T x jud i jo h M p t t \K ^ 2.0m 400n tf 1.5m 300n 200n td o n 1.0m E o ff 100n 0 500.0µ 30 40 50 60 70 G a te R e s i s ta n c e [ +] 80 90 100 30 40 50 60 70 G a te R e s i s ta n ce [ +] 80 90 100 700n 5.5m 600n Vcc = 600[V] Ic = 60[A] Vge = 15[V] Tc = 25[ ]  & 5.0m td o ff tr Vcc = 600[V] Ic = 60[A] 15[V] Vge= Tc =25[ ] Tx jud i jo h U jn f\t^ 500n T x ju d i jo h M p t t \K ^ 4.5m 4.0m 3.5m 3.0m 2.5m 2.0m  & Eo n 400n tf 300n td o n 200n E o ff 100n 1.5m 1.0m 30 40 50 60 70 G a te R e s i s ta n ce [ 0 +] 80 90 100 30 40 50 60 70 G a te R e s i s ta n c e [ +] 80 90 100 1µ 90 0n V c c = 600[V ] Ic = 110[A] Vg e = 1 5[V ] T c = 25[ ] 20.0m  T x ju d i jo h U jn f \ t ^ & tr 80 0n V = 600[V] cc Ic = 110[A] V = 15[V ge ] Tc = 25[ ] 15.0m  & 70 0n 60 0n 50 0n 40 0n 30 0n 20 0n 10 0n 0 30 40 50 60 70 G a t e Re s i s t a n c e Rg [ 80 Switching Loss [J] td o f f Eon 10.0m tf td o n Eoff 5.0m +] 90 10 0 0.0 30 40 50 60 70 Gate Resistance [ +] 80 90 100 SGL60N90D IGBT CO-PAK srr …‘ŽŽ‡…–‘”b…—””‡–b‹¥ƒŸ †… sr¯µ s¯µ srr·µ sr·µ …‘ŽŽ‡…–‘”b…—””‡–b‹¥ƒŸ srr –¬ stw Ÿ ˜©§ sw˜Ÿ ”©ws Ÿ   & Î sr sr s s sr srr …‘ŽŽ‡…–‘”o‡‹––‡”b˜‘Ž–ƒ‰‡b˜¥§˜Ÿ srrr s sr srr …‘ŽŽ‡…–‘”o‡‹––‡”b˜‘Ž–ƒ‰‡b˜¥§˜Ÿ srrr •ƒˆ‡ ‘’‡”ƒ–‹‰ ƒ”‡ƒ ”‡˜‡”•‡ „‹ƒ• •‘ƒ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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