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SGP100

SGP100

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    SGP100 - Primary-side-control PWM Controller - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
SGP100 数据手册
Product Specification Primary-side-control PWM Controller SGP100 applications. The result is a low-cost, smaller and lighter charger than a conventional design or a linear transformer. To minimize the standby power consumption, the proprietary green-mode function provides off-time modulation to linearly decrease PWM frequency under light-load conditions. This green-mode function allows the power supply to meet power conservation requirements. The start-up current is only 10µA, which allows large start-up resistance for further power saving. A charger can be implemented with few external components and minimal cost. A typical output CV/CC characteristic envelope is shown in Figure 1. Vo(V) FEATURES Constant-voltage (CV) and constant-current (CC) control without secondary-feedback circuitry Green-mode function: PWM frequency linearly decreasing Fixed PWM frequency at 42kHz with frequency hopping to solve EMI problems Low start-up current: 10μA (typical) Low operating current: 6.5mA (typical) Peak-current-mode control in CV mode Cycle-by-cycle current limiting VDD over-voltage protection with latch (OVP) VDD under-voltage lockout (UVLO) Gate output maximum voltage clamped at 18V Fixed over-temperature protection with latch +/- 10% APPLICATIONS Battery chargers for cellular phones, cordless phones, PDA, digital cameras, and power tools Replacement for linear transformer and RCC SMPS DESCRIPTION This highly integrated PWM controller provides several features to enhance the performance of low-power flyback converters. The patented topology of SGP100 enables simplified circuit design for battery charger +/- 10% Io(mA) Figure 1. Typical Output V-I Characteristic TYPICAL APPLICATION © System General Corp. Version 1.1.1 (IAO33.0042.B1) -1- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 MARKING INFORMATION PIN CONFIGURATION SGP100TP XXXXXXXXYWWV T: S=SOP P : Z=Lead Free + ROHS Compatible Null=regular package XXXXXXXX: Wafer Lot Y: Year; WW: Week V: Assembly Location SOP-8 CS PGND COMI COMV 1 2 3 4 8 7 6 5 GATE VDD SGND VS ORDERING INFORMATION Part Number SGP100SZ Pb-Free Package 8-pin SOP-8 PIN DESCRIPTIONS Name CS PGND COMI COMV VS SGND VDD GATE Pin No. Type 1 2 3 4 5 6 7 8 Analog Input Ground Analog Output Analog Output Analog Input Ground Supply Driver Output Function Current sense. Connected to a current-sense resistor for peak-current-mode control in CV mode. The current-sense signal is also provided for output-current regulation in CC mode. Power ground. Current compensation. Output of the current error amplifier. Connect a capacitor between the COMI pin and SGND for frequency compensation. Voltage compensation. Output of the voltage error amplifier. Connect a capacitor between the COMV pin and SGND for frequency compensation. Voltage sense. Output-voltage-sense input for output-voltage regulation. Signal ground. Power supply. The totem-pole output driver to drive the power MOSFET. © System General Corp. Version 1.1.1 (IAO33.0042.B1) -2- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 BLOCK DIAGRAM © System General Corp. Version 1.1.1 (IAO33.0042.B1) -3- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 ABSOLUTE MAXIMUM RATINGS Symbol VDD VL PD RθJC TJ TSTG TL ESD Parameter DC Supply Voltage* Input Voltage to CS, COMV, COMI, VS Pins Power Dissipation Thermal Resistance (Junction-to-Case) Operating Junction Temperature Storage Temperature Range Lead Temperature (Wave Soldering or Infrared, 10 Seconds) Electrostatic Discharge Capability, Human Body Model Electrostatic Discharge Capability, Machine Model Value 30 -0.3 to 7.0 400 68.3 -40 to +125 -55 to +150 260 4.5 200 Unit V V mW °C/W °C °C °C kV V *All voltage values, except differential voltages, are given with respect to the GND pin. *Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. RECOMMENDED OPERATING CONDITIONS Symbol TA Parameter Operating Ambient Temperature Max. -20 to +85 Unit °C *For proper operation. ELECTRICAL CHARACTERISTICS VCC=15V, TA=25°C, unless otherwise noted. VDD Section Symbol VOP VDD-ON VDD-OFF IDD-ST IDD-OP VDD-OVP TOVP IDD-OVP Parameter Continuously Operating Voltage Turn-on Threshold Voltage Turn-off Threshold Voltage Start-up Current Operating Supply Current VDD Over-Voltage Protection Level VDD Over-Voltage Protection Debounce Test Condition Min. 15 6.25 Typ. 16 6.75 10 6.5 Max. 25 17 7.25 20 7.5 29 180 50 Unit V V V µA mA V µs µA 0< VDD < VDD-ON-0.16V VDD=20V, FS=FOSC, CL=1nF 27 Fs=FOSC 90 10 28 130 30 VDD Over-Voltage Protection Holding Current VDD=5V Oscillator Section Symbol FOSC TFHP FOSC-N-MIN FOSC-CM-MIN Parameter Frequency Center frequency Frequency Hopping Range Test Condition Min. 39 ±2.2 2.75 350 20 Typ. 42 ±2.6 3.00 500 25 Max. 45 ±3 3.25 650 35 Unit kHz ms Hz kHz Frequency Hopping Period Minimum Frequency at No-load Minimum Frequency at CCM © System General Corp. Version 1.1.1 (IAO33.0042.B1) -4- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 Voltage-Sense Section Symbol TRATIO ITC-25 Parameter Proportion of TON and TDIS for Brownout Protection* CV Temperature Compensation Current Test Condition TON /TDIS Min. Typ. 1.5 Max. Unit 9 10 11 µA * Guaranteed by design. Current-Sense Section Symbol ZCS TPD TLEB TMIN-N VSLOPE DSAW VTH-VA VTH-FT Parameter Filter Resistance Propagation Delay to GATE Output Leading-Edge Blanking Time Minimum On-time at No Load Slope Compensation* Duty Cycle of SAW Limiter* Valley Threshold Voltage for Current Limit Flat threshold Voltage for Current Limit Test Condition Min. Typ. 2 150 Max. 200 1225 1350 0.43 45 Unit kΩ ns ns ns V % V V TMIN-N-TPD 825 1075 0.37 35 VTH-FT - 0.4 1.2 1025 1200 0.40 40 VTH-FT - 0.25 VTH-FT - 0.1 1.3 1.5 * Guaranteed by design. VTH − FT 40% VTH −VA DCYMAX Saw Limiter Voltage Error Amplifier Section Symbol VVR VN VG SG IV-SINK IV-SOURCE VV-HIGH Parameter Reference Voltage Green-Mode Starting Voltage Green-Mode Ending Voltage Green-Mode Frequency Decreasing Rate Output Sink Current Output Source Current Output High Voltage Test Condition FS=FOSC-2KHz FS=1KHz SG=(FOSC-3KHz)/(VN-VG) VVS=3V, VCOMV=2.5V VVS=2V, VCOMV=2.5V VVS=2.3V Min. 2.475 1.55 25 85 85 4.5 Typ. 2.500 1.70 0.55 35 100 100 Max. 2.525 1.85 0.90 45 115 115 Unit V V V Hz/mV µA µA V Current Error Amplifier Section Symbol VIR II-SINK II-SOURCE VI-HIGH Parameter Reference Voltage Output Sink Current Output Source Current Output High Voltage Test Condition VCS=3V, VCOMI=2.5V VCS=0.5V, VCOMI=2.5V VCS=0.5V Min. 2.475 40 40 4.5 Typ. 2.500 60 60 Max. 2.525 80 80 Unit V µA µA V © System General Corp. Version 1.1.1 (IAO33.0042.B1) -5- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 GATE Section Symbol DCYMAX VOL VOH TR TF VCLAMP Parameter Maximum Duty Cycle Output Voltage Low Output Voltage High Rising Time Falling Time Output Clamp Voltage Test Condition VDD=20V, IO=10mA VDD=8V, IO=1mA VDD=20V, CL=1nF VDD=20V, CL=1nF VDD=25V Min. 70 5 Typ. 75 Max. 80 1.5 Unit % V V ns ns 200 80 15 18 V Over-Temperature Protection Section Symbol TOTP Parameter Threshold Temperature for OTP*+ Test Condition Min. 135 Typ. 150 Max. 165 Unit o C * Guaranteed by design. + When the over-temperature protection is activated, the power system enters latch mode and output is disabled. © System General Corp. Version 1.1.1 (IAO33.0042.B1) -6- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 TYPICAL CHARACTERISTICS O peration C urrent (I DD-O P ) vs Temperature 7.000 6.500 17.0 16.6 Turn_O n Threshold Voltage (V DD-O N) vs Temperature I DD-O P (mA) VDD-O N (V) 6.000 5.500 5.000 4.500 -40 -25 -10 5 20 35 50 65 80 95 110 125 16.2 15.8 15.4 15.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃ ) Temperature (℃ ) Turn-O ff Threshold Voltage (V DD-O F F ) vs Temperature 8.0 7.6 C enter Frequency (F O S C ) vs Temperature 47.000 45.000 F osc (KHz) VDD-O F F (V) 7.2 6.8 6.4 6.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 43.000 41.000 39.000 37.000 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃ ) Temperature (℃ ) Reference voltage (Vvr) vs Temperature 2.600 2.560 2.60 2.56 Reference Voltage (V Ir) vs Temperature Vvr (V) V Ir (V ) 2.520 2.480 2.440 2.400 -40 -25 -10 5 20 35 50 65 80 95 110 125 2.52 2.48 2.44 2.40 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃ ) Temperature (℃ ) © System General Corp. Version 1.1.1 (IAO33.0042.B1) -7- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 M in. Frequence at No-Load (F O S C -N-MIN) vs Temperature 600.0 Min. Frequency if CCM (FOSC-CM-MIN) vs Temperature 32.00 520.0 480.0 440.0 400.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 F OS C-CM-MIN (K H z ) F O S C -N-MIN (Hz) 560.0 30.00 28.00 26.00 24.00 22.00 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃ ) Temperature (℃ ) G reen-Mode Frequency Decreasing Rate (S G ) vs Temperature 45.0 1500.0 1400.0 Min. On Time (Tmin) vs Temperature SG (Hz/ mV) 40.0 35.0 30.0 25.0 20.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 Tm in (nS ) 1300.0 1200.0 1100.0 1000.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃ ) Temperature (℃ ) Leading Edge Blanking Time (T L E B ) vs Temperature G reen-Mode S tarting Voltage (V N) vs Temperature 1300.0 1200.0 1.800 1.740 TLEB (nS) 1100.0 1000.0 900.0 800.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 VN (V) 1.680 1.620 1.560 1.500 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃ ) Temperature (℃ ) © System General Corp. Version 1.1.1 (IAO33.0042.B1) -8- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 G reen-M ode End ing Vol tag e (Vg ) vs Temperature 0.90 0.80 80.000 70.000 Output Sink C urrent (I INK ) vs Temperature I-S II-SINK (uA) V G (V) 0.70 0.60 0.50 0.40 -40 -25 -10 5 20 35 50 65 80 95 110 125 60.000 50.000 40.000 30.000 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃ ) Temperature (℃ ) Output S ource C urrent (I O URC E ) vs Temperature I-S 80.000 Output S ink C urrent (I -S INK ) vs Temperature V 120.000 110.000 II-SOURCE (uA) 70.000 60.000 50.000 40.000 30.000 -40 -25 -10 5 20 35 50 65 80 95 110 125 I V-SINK (uA) 100.000 90.000 80.000 70.000 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃ ) Temperature (℃ ) O utput Source C urrent (I -S O URC E ) vs Temperature V 120.000 110.000 100.000 90.000 80.000 70.000 -40 -25 -10 5 20 35 50 65 80 95 110 125 Maximum Duty C ycle (DC Y MA X ) vs Temperature 81.00 79.00 77.00 75.00 73.00 71.00 -40 -25 -10 5 20 35 50 65 80 95 110 125 IV-SOURCE (uA) Temperature (℃ ) DC Y MA X (% ) Temperature (℃ ) © System General Corp. Version 1.1.1 (IAO33.0042.B1) -9- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 OPERATION DESCRIPTION The patented topology of SGP100 enables simplified circuit design for battery charger applications. Without secondary feedback circuitry, the CV and CC control can be achieved accurately. As shown in Figure 2, with the frequency-hopping PWM operation, EMI problem can be solved using minimized filter components. SGP100 also provides many protection functions. The VDD pin is equipped with over-voltage protection and under-voltage lockout. Pulse-by-pulse current limiting and CC control ensure over-current protection at heavy loads. The GATE output is clamped at 18V to protect the external MOSFET from over-voltage damage. Also, the internal over-temperature protection shuts down the controller with latch when over heated. Gate Signal SGP100 uses the positive, proportional, output load parameter (VCOMV) as an indication of the output load for modulating the PWM frequency. In heavy load conditions, the PWM frequency is fixed at 42KHz. Once VCOMV is lower than VN, the PWM frequency starts to linearly decrease from 42KHz to 500Hz (0.55V), providing further power savings and meeting international power conservation requirements. Frequency 42KHz 40KHz 1KHz 500Hz VG 44.6KHz +/- 2.6KHz VN VCOMV Figure 3. Green-Mode Operation Frequency vs. VCOMV 39.4KHz Frequency Hopping Period → 3mS Figure 2. Frequency Hopping Constant Voltage (CV) and Constant Current (CC) Operation An innovative technique of the SGP100 can accurately achieve CV/CC characteristic output without secondary side voltage or current-feedback circuitry. There is a feedback signal for CV/CC operation from the reflected voltage across the primary auxiliary winding. This voltage signal is proportional to secondary winding, so it provides controller the feedback signal from secondary side and achieves constant-voltage output. In constant-current output, this voltage signal is detected and examined by the precise constant current regulation controller, which determines the on-time of the MOSFET to control input power and provide constant-current output. With feedback voltage VCS across the current-sense resistor, the controller can obtain the input power of power supply. Therefore, the region of constant current output operation can be adjusted by a current-sense resistor. Start-up Current The start-up current is only 10µA. Low start-up current allows a start-up resistor with high resistance and low-wattage to supply the start-up power for the controller. A 1.5MΩ, 0.25W start-up resistor and a 10µF/25V VDD hold-up capacitor are sufficient for an AC-to-DC power adapter with a wide input range (90VAC to 264VAC). Operating Current The operating current has been reduced to 6.5mA. The low operating current results in higher efficiency and reduces the VDD hold-up capacitance requirement. Green-Mode Operation Figure 3 shows the characteristics of the PWM frequency vs. the output voltage of the error amplifier (VCOMV). The © System General Corp. Version 1.1.1 (IAO33.0042.B1) - 10 - www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 VDD Over-Voltage Protection VDD over-voltage protection prevents damage due to over-voltage conditions. When the voltage VDD exceeds 28V due to abnormal conditions, PWM output is latched off. Over-voltage conditions are usually caused by open feedback loops. Temperature Compensation The SGP100 has built-in temperature compensation circuitry to provide constant reliable voltage regulation at differing ambient temperatures. This internal positive temperature coefficient (PTC) compensation current is used to compensate for the temperature due to the forward-voltage drop of the diode output. The internal PTC current passes through the external resistor (R1). The value of R1 determines the temperature compensation amount. The suggested value for R1 is 10~20KΩ with a +/-1% tolerance value. Temperature Compensation Over-Temperature Protection (OTP) The SGP100 has a built-in temperature sensing circuit to shut down the PWM output then enters latch mode once the junction temperature exceeds 150°C. When the PWM output shuts down, the VDD voltage gradually drops to the UVLO voltage. The PWM controller does not release latch mode until the AC is unplugged. PTC Vs R1 10k~20k ± 1% + VR1 − Auxiliary Winding Gate Output The SGP100 BiCMOS output stage is a fast totem pole gate driver. Cross conduction is avoided to minimize heat dissipation, increase efficiency, and enhance reliability. The output driver is clamped by an internal 18V Zener diode to protect power MOSFET transistors from undesired over-voltage gate signals. SGP100 Figure 4. Temperature Compensation Leading-Edge Blanking Each time the power MOSFET is switched on, a turn-on spike occurs at the sense resistor. To avoid premature termination of the switching pulse, a 150ns leading-edge blanking time is built in. Conventional RC filtering can therefore be omitted. During this blanking period, the current-limit comparator is disabled and cannot switch off the gate driver. Built-in Slope Compensation The sensed voltage across the current-sense resistor is used for current mode control and pulse-by-pulse current limiting. Built-in slope compensation improves stability and prevent sub-harmonic oscillations due to peak-current mode control. The SGP100 has a synchronized, positively-sloped ramp built-in at each switching cycle. Noise Immunity Under-Voltage Lockout (UVLO) The turn-on and turn-off thresholds are fixed internally at 16V/6.75V. During start-up, the hold-up capacitor must be charged to 16V through the start-up resistor, so that the SGP100 is enabled. The hold-up capacitor continues to supply VDD until power can be delivered from the auxiliary winding of the main transformer. VDD must not drop below 6.75V during this start-up process. This UVLO hysteresis window ensures that hold-up capacitor is adequate to supply VDD during start-up. Noise from the current sense or the control signal can cause significant pulse width jitter. While slope compensation helps alleviate these problems, further precautions should still be taken. Good placement and layout practices should be followed. Avoiding long PCB traces and component leads, locating compensation and filter components near the SGP100, and increasing the power MOS gate resistance improves performance. © System General Corp. Version 1.1.1 (IAO33.0042.B1) - 11 - www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 REFERENCE CIRCUIT 5W Flyback 5V/1A Circuit R13 L AC input N L1 BD1 T1 R11 D4 C8 L2 R8 C5 C9 C1 C2 D3 R1 C10 R12 D1 C3 R2 R3 U1 7 VDD VS 5 C4 R4 D2 3 COMI C7 R10 GATE 8 1 R5 R6 R7 4 COMV CS PGND C6 R9 6 SGND 2 SGP100 BOM List Symbol Component R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 BD1 D1 D2 Resistor 1.5MΩ 1/2 W Resistor 4.7Ω Resistor 115KΩ 1% Resistor 18KΩ 1% Resistor 47Ω Resistor 100Ω Resistor 1.4Ω 1/2W 1% Resistor 150KΩ 1/2W Resistor 200KΩ Resistor 56KΩ Resistor 47Ω Resistor 510Ω Symbol Component D3 D4 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 Diode 1A/1000V FR107 Diode 5A/60V SB560 Electrolytic Capacitor 1µF/400V Electrolytic Capacitor 10µF/400V Electrolytic Capacitor 10µF/50V MLCC X7R 47pF Snubber Cap. 222pF/1KV MLCC X7R 683pF MLCC X7R 103pF MLCC 102pF/100V Electrolytic Cap. 560µF/10V L-ESR Electrolytic Cap. 330µF/10V L-ESR Inductor 1mH Inductor 5µH Fairchild 2A/600V 2N60 TO-251 SGP100 Symbol Component TR1 EE-16 Lm=1.5mH Pri:Sec:Aux=135:10:33 WireWound Resistor 18Ω L1 Rectifier Diode 1N4007 *4 L2 Diode 1A/200V FR103 Diode 1N4148 Q1 U1 © System General Corp. Version 1.1.1 (IAO33.0042.B1) - 12 - www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 PACKAGE INFORMATION 8PINS-SOP(S) 8 5 C 1 b 4 e D A1 A DIMENSIONS Symbol A A1 b c D E e F H L θ˚ Millimeter Min. Typ. 1.346 0.101 0.406 0.203 4.648 3.810 1.016 5.791 0.406 0° Max. 1.752 0.254 1.270 0.381X45° 4.978 3.987 1.524 6.197 1.270 8° © System General Corp. Version 1.1.1 (IAO33.0042.B1) H F E Θ L Inch Min. 0.053 0.004 Typ. 0.016 0.008 Max. 0.069 0.010 0.183 0.150 0.040 0.228 0.016 0° 0.050 0.015X45° 0.196 0.157 0.060 0.244 0.050 8° - 13 - www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification Primary-side-control PWM Controller SGP100 © System General Corp. Version 1.1.1 (IAO33.0042.B1) - 14 - www.sg.com.tw • www.fairchildsemi.com September 26, 2007
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