SGR20N40L

SGR20N40L / SGU20N40L August 2001 IGBT SGR20N40L / SGU20N40L General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications Features • • • • • High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20N40L Application Strobe flash. C C G G E D-PAK GC E I-PAK E Absolute Maximum Ratings Symbol VCES VGES ICM (1) PC TJ Tstg TL TC = 25°C unless otherwise noted Description Collector - Emitter Voltage Gate - Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds @ TC = 25°C SGR / SGU20N40L 400 ±6 150 45 -40 to +150 -40 to +150 300 Units V V A W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA (D-PAK) RθJA (I-PAK) Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Thermal Resistance, Junction-to-Ambient Typ. ---Max. 3.0 50 110 Units °C/W °C/W °C/W Notes : (2) Mounted on 1” square PCB (FR4 or G-10 Material) ©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1 SGR20N40L / SGU20N40L Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 ------10 ± 0.1 V µA µA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage C-E Saturation Current IC = 1mA, VCE = VGE IC = 150A, VGE = 4.5V 0.5 2.0 1.0 4.5 1.4 8.0 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V, VCE = 30V, f = 1MHz ---3800 50 35 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC = 300V, IC = 150A, VGE = 4.5V, RG = 15Ω* Resistive Load ----0.2 1.7 0.3 1.5 --0.5 2.0 µs µs µs µs * Notes : Recommendation of RG Value : RG≥15Ω ©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1 SGR20N40L / SGU20N40L 200 Common Emitter T C = 25℃ 7 5.0V 4.5V Common Emitter VGE = 4.5V 150A Collector-Emitter Voltage, VCE [v] Collector Current, IC [A] 150 4.0V 3.5V 6 5 100 3.0V 4 100A VGE = 2.5V 50 3 IC = 70A 0 0 2 4 6 8 2 -50 0 50 100 150 Collector-Emitter Voltage, VCE [V] Case Temperature, TC [℃] Fig 1. Typical Output Characteristics Fig 2. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter TC = -40℃ 20 Common Emitter TC = 25℃ Collector-Emitter Voltage, VCE [V] 16 12 Gate-Emitter Voltage, VGE [V] 16 12 8 150A 4 100A IC = 70A 0 0 1 2 3 4 5 6 8 150A 4 100A IC = 70A 0 0 1 2 3 4 5 6 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig 3. Saturation Voltage vs. VGE Fig 4. Saturation Voltage vs. VGE 20 Common Emitter T C = 125℃ 10000 Cies Collector-Emitter Voltage, VCE [V] 16 1000 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 12 8 150A 100A Capacitance [pF] 100 Coes 4 IC = 70A 0 0 1 2 3 4 5 6 10 0 10 Cres 20 30 40 Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation Fig 6. Capacitance Characteristics SGR20N40L / SGU20N40L Rev. A1 SGR20N40L / SGU20N40L 6 Common Emitter VCC = 300V, RL = 2Ω TC = 25℃ 200 175 Gate - Emitter Voltage, VGE [V] Collector Peak Current, ICP [A] 150 125 100 75 50 25 4 2 0 0 10 20 30 40 50 60 0 0 2 4 6 8 10 Gate-Charge, Qg [nC] Gate - Emitter Voltage, VGE [V] Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Collector Current Limit vs. Gate - Emitter Voltage Limit ©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3