SGS5N150UF
IGBT
SGS5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications.
Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
C
G
TO-220F
GC E
TC = 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
@ T C = 2 5° C @ TC = 100°C @ TC = 25°C @ TC = 100°C
SGS5N150UF 1500 ± 20 10 5 20 50 20 -55 to +150 -55 to +150 300
Units V V A A A W W °C °C °C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 2.5 62.5 Units ° C/ W ° C/ W
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
SGS5N150UF
Electrical Characteristics of IGBT
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1500 ------1.0 ± 100 V mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 5mA, VCE = VGE IC = 5A, VGE = 10V 2.0 -3.0 4.7 4.0 5.5 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 10V, VGE = 0V, f = 1MHz ---780 130 70 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V I C = 5A RG =10Ω VGE = 10V Inductive Load TC = 25°C VCE = 600 V, IC = 5A VGE = 10V ----------10 15 30 70 190 100 290 30 3 15 --50 120 --580 45 5 25 ns ns ns ns uJ uJ uJ nC nC nC
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
SGS5N150UF
80 20 V 70 15 V 60 50
40 Tc = 25℃ Tc = 100℃ 50 Vge=10V
10 V
Ic [A]
40 30 20
Ic [A]
Vge=5 V
30
20
10
10 0 0 5 10 15
0
20
0
4
8
12
16
20
Vce [V]
Vce [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
8.0 Vge = 10V 7.5 Vge=10V
10 7.0 8 6.5
Vce(sat) [V]
Ic =10A
Ic [A]
6
6.0 5.5 5.0
4
2 4.5 0 25 50 75 100 125 150 4.0 20 40 60 80 100
Ic = 5A
120
140
Tc [℃]
Tc [℃]
Fig 3. Maximum Collector Current vs. Case Temperature
Fig 4. Saturation Voltage vs. Case Temperature
10 Vcc = 600V Load Current : peak of square wave
10
Thermal Response [Zthjc]
8
0.5 1 0.2 0.1 0.05 0.1
Pdm
Load Current [A]
6
4
0.02 0.01
t1 t2
2 Duty cycle : 50% Tc = 100 C Power Dissipation = 12W 0 0.1 1 10 100 1000
o
single pulse 0.01 1E-5 1E-4 1E-3 0.01
Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC
0.1
1
10
Frequency [kHz]
Rectangular Pulse Duration [sec]
Fig 5. Load Current vs. Frequency
Fig 6. Transient Thermal Impedance of IGBT Junction to Case
SGS5N150UF Rev. B
©2003 Fairchild Semiconductor Corporation
SGS5N150UF
1200
10
1000
Common Emitter RL = 120Ω, VCC = 600V TC = 25 C
o
[V]
800 Cies
8
Capacitance [pF]
Gate - Emitter Voltage, V
GE
6
600
400
4
200 Coes 0 1 Cres 10
2
0 0 10 20 30
Vce [V]
Gate Charge, Qg [nC]
Fig 7. Typical Capacitance vs. Collector to Emitter Voltage
600 Vcc = 600V Ic = 5A 500 Esw
Fig 8. Typical Gate Charge Characteristic
1200 Vcc = 600V Rg = 10Ω Vge = 10V 1000 Ic = 10A
Energy [uJ]
Eon 300
Energy [uJ]
400
800
600
Ic = 5A
200 Eoff
400
Ic = 3A
100 0 5 10 15 20 25 30
200 20 40 60 80 100
Rg [Ω ]
Tc [℃]
Fig 9. Typical Switching Loss vs. Gate Resistance
1.2 Vcc = 600V Rg = 10Ω Tc = 100℃ 1.0 Esw
Fig 10. Typical Switching Loss vs. Case Temperature
10 0.8
Energy [mJ]
0.6
Eon Eoff
0.4 Safe Operating Area Vge = 20V, Tc = 100℃ 1 4 6 8 10 1 10 100 1000
0.2
Ic [A]
Ic [A]
Vce [V]
Fig 11. Typical Switching Loss vs. Collector Current
©2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off SOA
SGS5N150UF Rev. B
SGS5N150UF
Package Dimension
TO-220F (FS PKG CODE AQ)
3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70)
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47 9.75 ±0.30 0.80 ±0.10
(3 ) 0°
0.35 ±0.10 2.54TYP [2.54 ±0.20]
#1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20
+0.10
2.76 ±0.20
9.40 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation SGS5N150UF Rev. B
15.87 ±0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ Across the board. Around the world™ The Power Franchise™ DISCLAIMER
ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™
PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™
SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I2
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