SGW13N60UFD
IGBT
SGW13N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
• • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5A High input impedance CO-PAK, IGBT with FRD : trr = 37ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G E
D2-PAK
E
TC = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes from Case for 5 Seconds
@ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C
SGW13N60UFD 600 ± 20 13 6.5 52 8 56 60 25 -55 to +150 -55 to +150 300
Units V V A A A A A W W °C °C °C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. ---Max. 2.0 3.5 40 Units °C/W °C/W °C/W
Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
SGW13N60UFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 6.5mA, VCE = VGE IC = 6.5A, VGE = 15V IC = 13A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---375 63 13 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------20 27 70 97 85 95 180 30 32 85 168 180 165 345 25 7 8 7.5 --130 150 --270 --200 250 --500 35 12 14 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH
VCC = 300 V, IC = 6.5A, RG = 50Ω, VGE = 15V, Inductive Load, TC = 25°C
VCC = 300 V, IC = 6.5A, RG = 50Ω, VGE = 15V, Inductive Load, TC = 125°C
VCE = 300 V, IC = 6.5A, VGE = 15V Measured 5mm from PKG
= 25°C unless otherwise noted
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
I F = 8A
Test Conditions T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C
Min. ---------
Typ. 1.4 1.3 37 55 3.5 4.5 65 124
Max. 1.7 -55 -5.0 -138 --
Units V ns A nC
IF = 8A, di/dt = 200A/us
T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
SGW13N60UFD
60 Common Emitter T C = 25 ℃ 50 20V
30 Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃
25
Collector Current, IC [A]
40
15V
Collector Current, IC [A]
8
20
30 12V 20 V GE = 10V 10
15
10
5
0 0 2 4 6
0 0.5 1 10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4
12 Common Emitter V GE = 1 5V
VCC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]
3
13A
9
6.5A 2 IC = 3 A 1
Load Current [A]
6
3 Duty cycle : 50% TC = 100℃ Power Dissipation = 14W 0.1 1 10 100 1000
0 0 30 60 90 120 150
0
Case Temperature, TC [℃ ]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25 ℃
20 Common Emitter T C = 125℃
Collector - Emitter Voltage, VC E [V]
16
Collector - Emitter Voltage, V E [V] C
16
12
12
8
8
4 IC = 3A 0 0 4 8
13A 6.5A
13A 4 IC = 3A 0 6.5A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGW13N60UFD Rev. A1
SGW13N60UFD
600 Common Emitter V GE = 0 V, f = 1MHz T C = 25℃ Cies
300 Common Emitter V CC = 300V, VGE = ± 15V IC = 6.5A T C = 2 5℃ T C = 125℃
500
Capacitance [pF]
Ton
Switching Time [ns]
400
100
300 Coes 200
Tr
100
Cres
0 1 10 30
10 1 10 100 400
Collector - Emitter Voltage, V CE [V]
Gate Resistance, R G [Ω ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
600
Switching Time [ns]
Common Emitter V CC = 300V, VGE = ± 15V IC = 6.5A T C = 25℃ T C = 125 ℃
600 Eon Toff
Switching Loss [uJ]
Toff
Eoff Eon 100 Eoff
Tf
100
Tf
50 1 10 100 300
10 1 10
Common Emitter V CC = 300V, V GE = ± 15V IC = 6.5A T C = 2 5℃ T C = 125℃ 100 400
Gate Resistance, R G [Ω ]
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200 Common Emitter VCC = 3 00V, VGE = ± 15V RG = 5 0 Ω T C = 25 ℃ TC = 1 25 ℃
1000 Common Emitter VCC = 300V, V GE = ± 15V RG = 5 0 Ω T C = 2 5℃ TC = 125℃
100
Switching Time [ns]
Switching Time [ns]
Toff Toff Tf 100 Tf
Ton
Tr 10 0 2 4 6 8 10 12 14 50 0 2 4 6 8 10 12 14
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGW13N60UFD Rev. A1
SGW13N60UFD
500 Common Emitter V CC = 300V, V GE = ± 15V R G = 50Ω T C = 25℃ T C = 125 ℃ 100
15 Common Emitter R L = 46 Ω Tc = 25℃
Gate - Emitter Voltage, VGE [ V ]
12
Switching Loss [uJ]
9 3 00 V 6 VCC = 100 V 3 200 V
Eon
Eon 10 Eoff Eoff 5 0 2 4 6 8 10 12 14
0 0 5 10 15 20 25
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 IC MAX. (Pulsed)
100
50us
Collector Current, I C [A]
10
IC MAX. (Continuous) 1㎳
100us
Collector Current, I C [A]
10
1
DC Operation Single Nonrepetitive Pulse TC = 2 5 ℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
1
0.1 0.05
Safe Operating Area V GE=20V, T C=100 C 0.1 1 10 100 1000
o
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [℃/W]
1
0.5 0.2 0.1
0.1
0.05
Pdm
0.02 0.01 single pulse 0.01 10
-5 -4 -3 -2 -1
t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC
10
10
10
10
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation SGW13N60UFD Rev. A1
SGW13N60UFD
100 T C = 25 ℃ T C = 1 00 ℃
100 VR = 2 00V IF = 8 A T C = 25 ℃ TC = 1 00 ℃
10
Reverse Recovery Current, I rr [A]
0 1 2 3
Forward Current, IF [A]
10
1
0.1
1 100
1000
Forward Voltage Drop, V FM [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
500
100 V R = 200V IF = 8A T C = 25℃ T C = 100 ℃
Stored Recovery Charge, Qr r [nC]
400
Reverce Recovery Time, t rr [ns]
80
VR = 200V IF = 8A T C = 2 5℃ TC = 100℃
300
60
200
40
100
20
0 100 1000
0 100 1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
SGW13N60UFD
Package Dimension
D2-PAK
(0.40) 9.90 ±0.20 4.50 ±0.20 1.30 –0.05
+0.10
1.20 ±0.20
9.20 ±0.20
15.30 ±0.30
1.40 ±0.20
2.00 ±0.10
0.10 ±0.15 2.54 ±0.30
SGW13N60UFD Rev. A1
2.40 ±0.20
4.90 ±0.20
(0.75)
1.27 ±0.10 2.54 TYP
0.80 ±0.10 2.54 TYP 10.00 ±0.20 (8.00) (4.40)
0°
~3
°
+0.10
0.50 –0.05
10.00 ±0.20 15.30 ±0.30
(1.75)
(7.20) 0.80 ±0.10 4.90 ±0.20
(2XR0.45)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
9.20 ±0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™
FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™
MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™
SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™
UHC™ UltraFET® VCX™
STAR*POWER is used under license
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. H5